K6T40 Search Results

K6T4008V1B-VF70

Abstract: Improved MF10 32-TSOP2-R
Contextual Info: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

K6T4016C3B-TB70

Abstract: K6T4016C3B-B
Contextual Info: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996

k6t4016c3c-tf70

Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Contextual Info: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.

Contextual Info: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary

K6T4008V1C-VF70

Abstract: K6T4008U1C K6T4008V1C K6T4008V1C-B KM68U4000C
Contextual Info: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns

K6T4008C1B-DB70

Abstract: K6T4008C1B-GL70 K6T4008C1B K6T4008C1B-B K6T4008C1B-F K6T4008C1B-L K6T4008C1B-P K6T4008C1BDL70 K6T4008C1B-VB70 k6t4008c1b-gb55
Contextual Info: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA

K6T4016C3B-B

Abstract: K6T4016C3B K6T4016C3B-F
Contextual Info: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996

k6t4016c3c-tf70

Abstract: K6T4016C3C K6T4016C3C-RB55 K6T4016C3C-TB70 K6T4016C3CTB7 K6T4016C3CF K6T4016C3C-TF55
Contextual Info: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6T4008U2C-ZF70

Abstract: K6T4008U2C K6T4008U2C-F K6T4008U2C-ZF10 K6T4008U2C-ZF85 K6T4008V2C
Contextual Info: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

K6T4016V3C-TF70

Contextual Info: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns

K6T4008C1C Family

Abstract: K6T4008C1C-GL70 K6T4008C1C-MB55 MF55 Type K6T4008C1C K6T4008C1C-B K6T4008C1C-F K6T4008C1C-L K6T4008C1C-P 512Kx8 bit Low Power CMOS Static RAM
Contextual Info: CMOS SRAM K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 20,1998 Preliminary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

ZF12

Contextual Info: K6T4016S6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 0.01 1.0 History Draft Date Remark Initial draft Errata correction June 26, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.

K6T4008U2C-ZF10

Contextual Info: K6T4008V2C, K6T4008U2C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft December 3, 1998 Preliminary 1.0 Finalize April 28, 1999 Final Revise - Improved VOH output high voltage from 2.2V to 2.4V.

Contextual Info: K6T4016V4C, K6T4016U4C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998 Preliminary 0.1 Revise - Add 3,3V product: K6T4016V4C

K6T4016U3C

Abstract: K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70
Contextual Info: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns

K6T4016V3C

Abstract: K6T4016V3C-TF70 K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB70
Contextual Info: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns

VF10

Abstract: K6T4008V1B
Contextual Info: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

K6T4016U6C-ZF70

Abstract: K6T4016U6C K6T4016U6C-F K6T4016U6
Contextual Info: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.

K6T4016V4C-ZF10

Abstract: K6T4016U4C K6T4016U4C-F K6T4016V4C
Contextual Info: K6T4016V4C, K6T4016U4C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark Initial draft - UB/LB power control Errata correction July 4, 1998 Preliminary 0.1 Revise - Add 3,3V product : K6T4016V4C

Contextual Info: K6T4016S3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction June 16, 1998 August 10, 1998 Preliminary Finalize April 30, 1999

K6T4008C1B-DB70

Abstract: K6T4008C1B-DL70 K6T4008C1B-GL55
Contextual Info: CMOS SRAM K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft December 7, 1996 Advance 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA

K6T4016U3C

Abstract: K6T4016U3C-B K6T4016U3C-F K6T4016V3C K6T4016V3C-B K6T4016V3C-F K6T4016V3C-TB55
Contextual Info: K6T4016V3C, K6T4016U3C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History Draft Date Remark 0.0 Initial draft January 13, 1998 Advance 0.1 Revise - Speed bin change Commercial: 70/85ns → 70/85/100ns

K6T4008V1C-GB70

Abstract: K6T4008V1C-VF70 mf10
Contextual Info: K6T4008V1C, K6T4008U1C Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied - Speed bin change KM68U4000C: 85/100ns → 70/85/100ns