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    K72 MOSFET Search Results

    K72 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K72 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet k72

    Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
    Text: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: K72 Dimensions in inches and (millimeters)


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    PDF 2N7002W OT-323 500mA mosfet k72 k72 diode K72 marking diode k72 mosfet I-S115 marking K72

    k72 transistor

    Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
    Text: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF 2N7002DW OT-363 OT-363, J-STD-020A MIL-STD-202, DS30120 500mA k72 transistor transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code

    k72 transistor

    Abstract: k72 transistor surface mount mosfet k72 transistor k72 transistor marking k72 k72 marking k72 device marking k72 mosfet marking k72 K72 n
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    PDF 2N7002DW OT-363 OT-363, J-STD-020A MIL-STD-202, 500mA DS30120 k72 transistor k72 transistor surface mount mosfet k72 transistor k72 transistor marking k72 k72 marking k72 device marking k72 mosfet marking k72 K72 n

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW SPICE MODEL: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF 2N7002DW OT-363 OT-363, J-STD-020A DS30120 500mA

    k72 transistor

    Abstract: transistor k72 transistor marking k72 mosfet k72 k72 transistor surface mount diagram 94v-0 Marking Code k72 K72 TO k72 mosfet k72 device marking
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    PDF 2N7002DW OT-363 OT-363, J-STD-020A MIL-STD-202, 500mA DS30120 k72 transistor transistor k72 transistor marking k72 mosfet k72 k72 transistor surface mount diagram 94v-0 Marking Code k72 K72 TO k72 mosfet k72 device marking

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description


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    PDF 2N7002DW DS30120 k72 diode

    k72 transistor

    Abstract: transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW
    Text: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2


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    PDF 2N7002DW OT-363 J-STD-020C DS30120 500mA k72 transistor transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW

    k72 sot-23

    Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
    Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS


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    PDF 2N7002DW OT-363 2N7002T 2SK3019 OT-523 2N7002KW 2N7002W 2SK3018 O-251 k72 sot-23 sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303

    k72 transistor

    Abstract: transistor k72 transistor marking k72 k72 device marking k72 diode Dual N-Channel mosfet sot-363 marking code tc sot 363 marking k72 mosfet k72 2N7002DW
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF 2N7002DW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS30120 k72 transistor transistor k72 transistor marking k72 k72 device marking k72 diode Dual N-Channel mosfet sot-363 marking code tc sot 363 marking k72 mosfet k72 2N7002DW

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


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    PDF 2N7002DW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS30120

    k72 transistor

    Abstract: k72 transistor surface mount 2N7002DW 2N7002DW-7-F
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF 2N7002DW AEC-Q101 OT-363 J-STD-020 MIL-STD-202, DS30120 k72 transistor k72 transistor surface mount 2N7002DW 2N7002DW-7-F

    DS30120 Rev. 13

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


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    PDF 2N7002DW AEC-Q101 OT363 J-STD-020 MIL-STD-202, DS30120 DS30120 Rev. 13

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


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    PDF 2N7002 210mA AEC-Q101 DS11303

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


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    PDF 2N7002DW AEC-Q101 DS30120

    diode K72

    Abstract: K72 marking diode k72 diode
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance


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    PDF 2N7002DW AEC-Q101 DS30120 diode K72 K72 marking diode k72 diode

    mosfet k72

    Abstract: k72 SOT-363 k72 transistor "DS30120 Rev. 10"
    Text: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2 G2 Low Input/Output Leakage D1


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    PDF 2N7002DW AEC-Q101 OT-363 DS30120 500mA mosfet k72 k72 SOT-363 k72 transistor "DS30120 Rev. 10"

    k72 transistor

    Abstract: K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72
    Text: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance • • • • • • • G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed


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    PDF 2N7002DW AEC-Q101 OT-363 OT-363 DS30120 k72 transistor K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72

    k72 transistor

    Abstract: transistor k72 k72 diode mosfet k72 MAX21000 2N7002DW marking K72 ID200
    Text: 2N7002DW 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃


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    PDF 2N7002DW width300 k72 transistor transistor k72 k72 diode mosfet k72 MAX21000 2N7002DW marking K72 ID200

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    PDF OT-523 2N7002T OT-523 200mA 500mA 115mA, 500mA

    marking k72

    Abstract: k72 td transistor k72 mosfet k72 k72 transistor k72 diode 2N7002W
    Text: 2N7002W 2N7002W MOSFET SOT-323 N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN 1.25±0.05 1.01 REF Power dissipation PD : 0.2 W(Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V


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    PDF 2N7002W 200mA marking k72 k72 td transistor k72 mosfet k72 k72 transistor k72 diode 2N7002W

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET SOT-323 N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN 1.01 REF 1.25±0.05 Power dissipation PD : 0.2 W(Tamb=25℃)


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    PDF OT-323 2N7002W 200mA

    k72 transistor

    Abstract: marking K72 transistor k72 mosfet k72 k72 td k72 diode 2N7002W
    Text: SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET SOT-323 N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN 1.01 REF 1.25±0.05 Power dissipation PD : 0.2 W(Tamb=25℃) Collector current ID: 115 mA


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    PDF OT-323 2N7002W 200mA k72 transistor marking K72 transistor k72 mosfet k72 k72 td k72 diode 2N7002W

    k72 transistor

    Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


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    PDF OT-363 2N7002DW width300 k72 transistor transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td

    K72 TO

    Abstract: transistor k72 k72 transistor 2N7002DW ID200
    Text: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range


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    PDF OT-363 2N7002DW width300 K72 TO transistor k72 k72 transistor 2N7002DW ID200