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    K7R641884M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K7R641884M Samsung Electronics Original PDF

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    K7R643684

    Abstract: No abstract text available
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15 K7R643684

    K7R643684M-FC30

    Abstract: K7R641884M-FC20 K7R641884M K7R643684M-FC25 K7R641884M-FC25 K7R643684M K7R643684M-FC16 K7R643684M-FC20 SRAM sheet samsung K7R641884MFC20
    Text: Preliminary K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 2002 Advance 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding.


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit K7R643684M-FC30 K7R641884M-FC20 K7R641884M K7R643684M-FC25 K7R641884M-FC25 K7R643684M K7R643684M-FC16 K7R643684M-FC20 SRAM sheet samsung K7R641884MFC20

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 2002 Advance 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding.


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit

    K7R641884M-FC25

    Abstract: K7R643684M-FC20
    Text: Preliminary K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 2002 Advance 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding.


    Original     		PDF K7R643684M K7R641884M 2Mx36-bit, 4Mx18-bit 2Mx36 4Mx18 K7R641884M-FC25 K7R643684M-FC20

    K7R643684M

    Abstract: K7R641884M-FC25 K7R643684M-FC30 K7R641884M K7R643684M-FC16 K7R643684M-FC20 K7R643684M-FC25
    Text: K7R643684M K7R641884M K7R640884M Preliminary 2Mx36 & 4Mx18 & 8Mx8 QDR TM II b4 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep 14, 200 2 Advance 0.1 1. Update AC timing characteristics.


    Original     		PDF K7R643684M K7R641884M K7R640884M 2Mx36 4Mx18 2Mx36-bit, 4Mx18-bit, K7R643684M K7R641884M-FC25 K7R643684M-FC30 K7R641884M K7R643684M-FC16 K7R643684M-FC20 K7R643684M-FC25

    K7R643684M

    Abstract: D0-35 K7R641884M SRAM sheet samsung
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15 K7R643684M D0-35 K7R641884M SRAM sheet samsung

    Untitled

    Abstract: No abstract text available
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15

    Untitled

    Abstract: No abstract text available
    Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7R643684M K7R641884M 2Mx36 4Mx18 11x15

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original     		PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    samsung 167 fbga

    Abstract: Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C
    Text: Samsung QDR II SRAM High-Bandwidth Memory for Advanced Network Equipment Memory Technology Processes Four Times More Data Samsung offers a broad portfolio of Designers of next-generation telecommunications equipment require high-bandwidth memory for the


    Original     		PDF K7R323682C K7R323684C K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M 165-pin DS-09-SRAM-001 samsung 167 fbga Network Switches K7R640982M K7R323684C K7R160982B K7R161882B K7R161884B K7R163682B K7R163684B K7R320982C

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe