KA BAND HIGH POWER FET AMPLIFIER SCHEMATIC Search Results

RO4403

Abstract: ka band high power fet amplifier schematic OPAMP RF MODULATOR diode d1n4148 ka Band LNA, mixer Analog Voltage Variable Attenuator HMC346MS8G HMC346MS8G spice model HMC341 Voltage Controlled Attenuator
Contextual Info: v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator General Description The HMC346MS8G is an absorptive Voltage Variable Attenuator VVA in an 8 lead surface-mount package operating from DC - 8 GHz. It features an on-chip reference attenuator for use with an external OpAmp to

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator

ka band high power fet amplifier schematic

Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description

12 volt-30 amp power diode

Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description

AA038P5-00

Contextual Info: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989

AA038P5-00

Contextual Info: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989

AA038P5-00

Abstract: rf amplifier broad band
Contextual Info: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989

AA038P5-00

Contextual Info: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 21 dBm Saturated Output Power at 38 GHz 1 .7 0 0 - 1.588 1 .2 3 0 - ■ 19 dB Small Signal Gain ■ 0.25 (im Ti/Pd/Au Gates 0.000

AA038P5-00

Contextual Info: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical Pi dB Output Power at 39 GHz ■ 0.25 ¡im Ti/Pd/Au Gates 0.000 ■ 100% On-Wafer RF and DC Testing

Contextual Info: 23-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P4-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 26 dBm Output Power at 28 GHz 0.000 ■ 13.5 dB Small Signal Gain 0 .1 1 0 ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

AA038P5-00

Contextual Info: 34–41 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989

AA038P5-00

Abstract: power amplifier 15 GHz dB dBm power amplifier 5 ghz ka band high power fet amplifier schematic 5.5 GHz power amplifier
Contextual Info: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989

Contextual Info: 30-35 GHz GaAs MMIC Driver Amplifier ESAlpha AA035P3-00 Features Chip Outline • Single Bias Supply Operation 6 V C\J ■ 18 dB Small Signal Gain CO ■ 19 dBm Saturated Output Power at 35 GHz ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

Contextual Info: 30–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 18 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

ka band gaas MESfet

Abstract: AA035P3-00
Contextual Info: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

mmic s2

Abstract: ka band high power fet amplifier schematic EM-33 AA028P1-00 ka band gaas MESfet alpha power supply MMIC amplifier Mt
Contextual Info: 26-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P1-00 Chip Outline Features • Single Bias Supply Operation 6 V ■ 23 dBm Saturated Output Power at 28 GHz 1 .7 0 0 -1 .6 1 3 — f 1 .3 7 1 — 1 y -0 ■PIN ■ 15 dB Small Signal Gain Typical at 28 GHz

Contextual Info: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

Contextual Info: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

AA035P3-00

Contextual Info: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing

AA028P1-00

Contextual Info: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 1.613 1.371 ■ 22 dBm Typical P1 dB Output Power at 28 GHz ■ 13.5 dB Typical Small Signal Gain 0.086 ■ 0.25 µm Ti/Pd/Au Gates 0.329 3.400

Contextual Info: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 ■ 22 dBm Typical P1 dB Output Power at 28 GHz 1.613 1.371 ■ 13.5 dB Typical Small Signal Gain ■ 0.25 µm Ti/Pd/Au Gates 0.329 0.086 3.400

Contextual Info: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Features Chip Outline • Single Gate and Drain Biases o ■ 27 dBm Output Power at 31 GHz ■ 12 dB Small Signal Gain ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883

ka band power mmic

Abstract: AA035P2-00 ka band high power fet amplifier schematic
Contextual Info: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 5 P 2 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 26 dBm Output Power at 35 GHz ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883

Contextual Info: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 2 P 1 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 27 dBm Output Power at 31 GHz 0.120 ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883