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    KDS12 Search Results

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    KDS12 Price and Stock

    Apex Tool Group LLC KDS120C

    CARTRIDGE 12 OZ CARTRIDGE 10/PK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KDS120C Bulk 1
    • 1 $85
    • 10 $85
    • 100 $85
    • 1000 $85
    • 10000 $85
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    Mouser Electronics KDS120C
    • 1 $85
    • 10 $85
    • 100 $85
    • 1000 $85
    • 10000 $85
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    RS KDS120C Package 1
    • 1 $85
    • 10 $76.5
    • 100 $76.5
    • 1000 $76.5
    • 10000 $76.5
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    Pentair Equipment Protection - Hoffman EKDS12124

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124 Bulk 1
    • 1 $7600.87
    • 10 $7600.87
    • 100 $7600.87
    • 1000 $7600.87
    • 10000 $7600.87
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    Pentair Equipment Protection - Hoffman EKDS12124PE

    FLOOR STANDING 1200X1200X400
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124PE Bulk 1
    • 1 $7546.57
    • 10 $7546.57
    • 100 $7546.57
    • 1000 $7546.57
    • 10000 $7546.57
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    Pentair Equipment Protection - Hoffman EKDS12124-4X

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124-4X Bulk 1
    • 1 $8324.34
    • 10 $8324.34
    • 100 $8324.34
    • 1000 $8324.34
    • 10000 $8324.34
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    Pentair Equipment Protection - Hoffman EKDS12124-316

    COMPACT ENC SS 2DR W MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EKDS12124-316 Bulk 1
    • 1 $11900.25
    • 10 $11900.25
    • 100 $11900.25
    • 1000 $11900.25
    • 10000 $11900.25
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    Find more KDS12 price and stock on Findchips.com

    KDS12 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    KDS120
    		Korea Electronics Switching Diode Original PDF 73.35KB 2
    KDS120
    		Korea Electronics Switching Diode Original PDF 73.26KB 2
    KDS120
    		Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF 111.7KB 1
    KDS120C
    		Apex Tool Group Accessories, Tools, CARTRIDGE 12 OZ CARTRIDGE 10/PK Original PDF 1
    KDS120E
    		Korea Electronics Switching Diode Original PDF 57.36KB 1
    KDS120E
    		Korea Electronics Switching Diode Original PDF 59.34KB 1
    KDS120V
    		Korea Electronics Switching Diode Original PDF 60.54KB 1
    KDS121
    		Korea Electronics Switching Diode Original PDF 302.84KB 2
    KDS121
    		Korea Electronics Switching Diode Original PDF 72.56KB 2
    KDS121
    		Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF 112.15KB 1
    KDS121E
    		Korea Electronics Switching Diode Original PDF 161.7KB 1
    KDS121E
    		Korea Electronics Switching Diode Original PDF 56.65KB 1
    KDS121V
    		Korea Electronics Switching Diode Original PDF 59.73KB 1
    KDS122
    		Korea Electronics Switching Diode Original PDF 72.45KB 2
    KDS122
    		Korea Electronics Switching Diode Original PDF 302.34KB 2
    KDS122
    		Korea Electronics SILICON EPITAXIAL PLANAR DIODE Scan PDF 153.23KB 2

    KDS12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 12 oz Cartridge Product Details Catalog No. KDS120C UPC Code 037103177629 Description Plastic Size 12 oz. Packaging Industrial Bag Literature 5506901A.pdf Low Res. KDS120C_100.jpg Image High Res. KDS120C_300.jpg Image Stock Item Normal Stock Item Package Details Dimensions


    Original     		KDS120C 506901A KDS120C PDF

    Contextual Info: SEMICONDUCTOR KDS128E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 S8 1 2 3 No. Item Marking Description Device Mark S8 KDS128E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index


    Original     		KDS128E PDF

    KDS121E

    Abstract: transistor ESM 30
    Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		KDS121E KDS121E transistor ESM 30 PDF

    KDS120

    Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . D J 2 : trr=1.6ns(Typ.). A : CT=2.2pF (Typ.). 3 1 G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time


    Original     		KDS120 KDS120 PDF

    Contextual Info: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ・Small package : TS6. K 1 6 G 2 5 G ・Low forward voltage. K B 3 4 DIM A B C D E D A ・Small total capacitance. F ・Fast reverse recovery time.


    Original     		KDS125T PDF

    KDS122

    Abstract: marking C3
    Contextual Info: SEMICONDUCTOR KDS122 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. M B M : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		KDS122 KDS122 marking C3 PDF

    KDS120

    Contextual Info: SEMICONDUCTOR KDS120 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : USM. B M M : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current


    Original     		KDS120 KDS120 PDF

    Contextual Info: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low Forward Voltage C A 6 2 5 3 4 D Ultra- Small Surface Mount Package 1 A1 Small Total Capacitance C Fast Reverse Recovery Time MAXIMUM RATING Ta=25


    Original     		KDS127E PDF

    Contextual Info: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 12. 23 Revision No : 1 1/2


    Original     		KDS121V PDF

    Contextual Info: SEMICONDUCTOR KDS122 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2011. 8. 10 Revision No : 5 1/2


    Original     		KDS122 PDF

    Contextual Info: SEMICONDUCTOR KDS126U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2008. 9. 11 Revision No : 1 1/2


    Original     		KDS126U PDF

    Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Small package : TES6. C A 6 2 5 3 4 D ・Small total capacitance. 1 A1 ・Fast reverse recovery time. C ・Low forward voltage. P SYMBOL


    Original     		KDS125E PDF

    KDS121

    Contextual Info: SEMICONDUCTOR KDS121 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E B M M : USM. : VF=0.9V Typ. . D J 2 A : trr=1.6ns(Typ.). G FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance


    Original     		KDS121 100mA KDS121 PDF

    Contextual Info: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. TENTATIVE FEATURES Small package : TS6. Low forward voltage. E Fast reverse recovery time. K VRM 85 V Reverse Voltage VR 80 V Maximum Peak Forward Current


    Original     		KDS125T PDF

    esm power diodes

    Abstract: KDS120E
    Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS120E 100mA esm power diodes KDS120E PDF

    Contextual Info: SEM ICONDUCTOR KDS125U TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Sm all package : US6. • L ow forw ard voltage. • Fast reverse recovery tim e. • Sm all total capacitance. M A X IM U M R A T IN G T a=25°C


    OCR Scan     		KDS125U PDF

    IR 30 D1

    Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING


    Original     		KDS125E IR 30 D1 PDF

    KDS120

    Contextual Info: SEMICONDUCTOR KDS120 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS120 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		KDS120 KDS120 PDF

    KDS120V

    Contextual Info: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Very Small Package : VSM. Low Forward Voltage : VF=0.92V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). H G D 2 : CT=2.2pF (Typ.).


    Original     		KDS120V 100mA KDS120V PDF

    Contextual Info: SEMICONDUCTOR KDS125T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small package : TS6. K 1 6 G 2 5 G Low forward voltage. K B 3 4 DIM A B C D E D A Small total capacitance. F Fast reverse recovery time.


    Original     		KDS125T PDF

    KDS123U

    Abstract: IR 30 D1
    Contextual Info: SEMICONDUCTOR KDS123U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package E B M M D J 3 1 G A 2


    Original     		KDS123U KDS123U IR 30 D1 PDF

    Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D C H : CT=2.2pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES


    Original     		KDS120E Ave00 100mA PDF

    Contextual Info: SEMICONDUCTOR KDS125E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Small package : TES6. C A 6 2 5 3 4 D Small total capacitance. 1 A1 Fast reverse recovery time. C Low forward voltage. P SYMBOL RATING


    Original     		KDS125E PDF

    Contextual Info: SEMICONDUCTOR KDS126E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low forward voltage. VF = 0.9V Typ. C 1 6 2 5 3 4 D A CT = 0.9pF(Typ.) C tr r= 1.6ns(Typ.) Small total capacitance. A1 Fast reverse recovery time.


    Original     		KDS126E PDF