KDV214 Search Results

Contextual Info: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR KDV214 TECHNICAL DATA TV TUNING. FEATURES 2008 .9. 11 Revision No : 4 1/2

Contextual Info: SEM ICONDUCTOR KDV214VA TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE s TV TUNING. FEATURES CATHODEMARK • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: Product specification KDV214 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio : C2V/C25V=6.5 Typ. Low Series Resistance : rS=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error.

KDV214

Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode KDV214 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio : C2V/C25V=6.5 Typ. Low Series Resistance : rS=0.4 +0.1 2.6-0.1 1.0max (Typ.) 0.375 0.475 Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR KDV214V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.

MARKING V2

Contextual Info: SEMICONDUCTOR KDV214VA MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V2 No. 2005. 4. 8 Item Marking Dvscription Device Mark V2 KDV214VA Revision No : 0 1/1

KDV214A

Abstract: C25V
Contextual Info: SEMICONDUCTOR KDV214A TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.57Ω Max. 1 E ・High Capacitance Ratio : C2V/C25V=6.3(Min.)

C25V

Abstract: KDV214E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. 1 A Max. E C B Low Series Resistance : rS=0.57 CATHODE MARK

KDV214A

Contextual Info: SEMICONDUCTOR KDV214A MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UZ 0 1 2 1 No. Item Marking Description Device Mark UZ KDV214A hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

C25V

Abstract: KDV214
Contextual Info: SEMICONDUCTOR KDV214 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.57Ω Max. 1 E ・High Capacitance Ratio : C2V/C25V=6.3(Min.)

Contextual Info: SEMICONDUCTOR KDV214E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance : rS=0.57 Max. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. E C 1 A High Capacitance Ratio : C2V/C25V=6.3(Typ.)

C25V

Abstract: KDV214E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES ・Excellent C-V Characteristics, and Small Tracking Error. ・Useful for Small Size Tuner. E 1 A ・Low Series Resistance : rS=0.4Ω Typ.

C25V

Abstract: KDV214
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ᴌExcellent C-V Characteristics, and Small Tracking Error. A ᴌLow Series Resistance : rS=0.4ή Typ. 1 E ᴌHigh Capacitance Ratio : C2V/C25V=6.5(Typ.)

KDV214E

Contextual Info: SEMICONDUCTOR KDV214E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UO No. 2000. 12. 27 Item Marking Description Device Mark UO KDV214E Revision No :0 1/1

Contextual Info: SEMICONDUCTOR KDV214A TECHNICAL DATA TV TUNING. FEATURES 2008. 9. 11 Revision No : 1 1/2

Contextual Info: SEMICONDUCTOR KDV214EA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance : rS=0.57 Max. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. E C 1 A High Capacitance Ratio : C2V/C25V=6.3(Typ.)

Contextual Info: SEM ICONDUCTOR KDV214 TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.

C25V

Abstract: KDV214
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.4Ω Typ. 1 E ・High Capacitance Ratio : C2V/C25V=6.5(Typ.)

C25V

Contextual Info: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR KDV214EA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. ・Low Series Resistance : rS=0.57Ω Max. ・Excellent C-V Characteristics, and Small Tracking Error. ・Useful for Small Size Tuner. E C 1 A ・High Capacitance Ratio : C2V/C25V=6.3(Typ.)

KDV214EA

Contextual Info: SEMICONDUCTOR KDV214EA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES ・Useful for Small Size Tuner. G 1 G ・Excellent C-V Characteristics, and Small Tracking Error. E C A ・Low Series Resistance : rS=0.57Ω Max.

C 12 PH diode

Abstract: C25V KDV214E diode C 12 PH
Contextual Info: KDV214E SEMICONDUCTOR TECHNICAL DA TA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES • • • • High Capacitance Ratio : C2V/C25V=6.5 Typ. Low Series Resistance : rs=0.4£! (Typ.) Excellent C -V Characteristics, and Small Tracking Error.

KDV214EA

Abstract: C25V
Contextual Info: SEMICONDUCTOR KDV214EA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance : rS=0.57 Max. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. E C 1 A High Capacitance Ratio : C2V/C25V=6.3(Typ.)