KEC 2N3906 Search Results

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

3906c

Abstract: 2N3906C marking 2n 2N3906
Contextual Info: SEMICONDUCTOR 2N3906C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906C K 3 No. Item 016 2 4 Marking Description 2N Series Name 3906C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year

2N3906

Abstract: 3906 2n3906 equivalent transistor transistor 2N3906 datasheet 2n3906 equivalent transistor 2N3906 2n3906 datasheet data sheet transistor 2n3906 3906 2n 2N3906 diode
Contextual Info: SEMICONDUCTOR 2N3906 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906 K 3 No. Item 816 2 4 Marking Description 2N Series Name 3906 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

2N3906S

Abstract: 2N3904S 2N3904S SOT-23 2N3906S SOT-23 1N916 marking 106V
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/-0.15 C D 1.30 MAX 0.45+0.1 5 /-0 .05 E 2.40+0.30/-0.20 DIM

2N3904

Abstract: 2N3906
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe= -30V , V eb=-3V . • Excellent DC Current Gain Linearity.

1N916

Abstract: 2N3904C 2N3906C
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe = -30V , V eb = -3V . • Excellent DC Current Gain Linearity.

2N3906U

Abstract: Scans-00124840
Contextual Info: KEC KOREA E LE C T R O N IC S CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @VCe =-30V, V eb=-3V .

1N916

Abstract: 20MS 2N3904C 2N3906C transistor 1tp
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @V ce=30V, Veb=3V. • Excellent DC Current Gain Linearity.

20MS

Abstract: 2N3904 2N3906
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V.

2N3904U

Abstract: 2N3906U 1N916 20MS ST30
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=50nA M ax. , lBL=50nA(M ax.) Œ2 @ V ce=30V, V eb=3V. • Excellent DC Current Gain Linearity.

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

BS33G

Abstract: 2N3906V transistor 2N3 marking O9
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906V EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

2N3906U

Abstract: 1N916 2N3904U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @VCe=-30V, V eb=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906E EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES r ? -1 • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3 V. • Excellent DC Current Gain Linearity.

KEC 2N3906

Abstract: 2N3906 transistor 2N3
Contextual Info: SEM ICONDUCTOR 2N3906 TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I ce-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @V Ce=-3 OV, V EB=-3 V. G- 1 • Excellent D C Current Gain Linearity.

2N3904U

Abstract: 2N3906U
Contextual Info: SEM IC O N D U C T O R 2N3906U TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SW ITCHING APPLICATION. FEATURES DIM A • Low Leakage Current B C : Icgj^-SOnAiMax. , IBL=-50nA Max.) D E @VCe=-3 OV, V EB=-3 V. G H • Excellent DC Current Gain Linearity.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

Contextual Info: SEM IC O N D U C T O R 2N3906C TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ice-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @VCe=-3 OV, V EB=-3 V. G- 1 • Excellent DC Current Gain Linearity.

2N3906 hie

Abstract: 1N916 2N3904 2N3906 KEC 2N3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

1N916

Abstract: 2N3904C 2N3906C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

2N3906S SOT-23

Abstract: 2N3904S 2N3904S SOT-23 2N3906S 1N916
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM A B C D E G H J • Low Leakage Current : IcEx=-50nA Max. , lBL=~50nA(Max.) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.