KH5 25 Search Results

hall sensor 4-pin

Abstract: hall sensor ic 4pin hall sensor 4pin hall 4 pins KH5 25 OH10009 4 pin hall 6 4 pin hall marking
Contextual Info: GaAs Hall Devices OH10009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the

marking KR 4pin

Abstract: 4 pin hall marking
Contextual Info: MA111 GaAs Hall Elements OH004 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic

hall marking D

Contextual Info: MA111 GaAs Hall Elements OH010 GaAs hall element Unit : mm Magnetic sensor 1.5±0.2 Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Mini type 4-pin package with positioning projection. Automatic

hall sensor 4-pin

Abstract: hall sensor 4pin 4pin hall sensor hall sensor ic 4pin 4 pin hall sensor hall 4pin 4pin hall hall hall 4 pins hall 9
Contextual Info: GaAs Hall Devices OH10010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)

OH003

Abstract: 4 pin hall marking marking KR 4pin hall sensor 3hr hall ic 4pin ir 142 oh-003 4pin hall sensor
Contextual Info: MA111 GaAs Hall Elements OH003 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through

OH009

Abstract: hall current sensor ic 4pin Hall
Contextual Info: MA111 GaAs Hall Elements OH009 GaAs hall element Unit : mm +0.2 Magnetic sensor 2.8 –0.3 +0.2 1.5 –0.3 0.65±0.15 • Features 0.65±0.15 Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C ● Sealed in the Mini type 4-pin package. Automatic insertion through

hall sensor 4-pin

Abstract: KH5 25 hall OH10008 hall sensor 4pin 4 pin hall sensor hall 4 pins 4 pin package hall sensor hall ic 4pin
Contextual Info: GaAs Hall Devices OH10008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field

hall sensor 3hr

Abstract: hall sensor 4-pin phonograph hall sensor 4pin marking KR 4pin 4 pin hall marking OH10003 4 pin hall marking R
Contextual Info: GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 • Features • Hall voltage: typ. 150 mV VC = 6 V, B = 0.1 T • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the

hall sensor 4pin

Abstract: marking KR 4pin hall 4hr 4 pin hall marking R 4HR hall 4pin hall sensor OH10004 4 pin hall 6 hall ic 4pin 4pin hall
Contextual Info: GaAs Hall Devices OH10004 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor VCR, phonograph, VD, CD, and FDD • Automotive equipment • Industrial equipment Symbol Rating Unit Control voltage

OH008

Abstract: 4pin hall sensor hall sensor ic 4pin hall ic 4pin hall sensor 4pin
Contextual Info: MA111 GaAs Hall Elements OH008 GaAs hall element Unit : mm ● Input resistance : typ. 0.75kΩ 3 2 0.6±0.1 0.8±0.1 2.85±0.25 ● Satisfactory linearity of GaAs hall voltage for the magnetic field ● Small temperature coefficient of the hall voltage : β ≤ – 0.06%/˚C

4G2 hall

Abstract: OH003 hall sensor 3hr OH10003 hall sensor Panasonic GaAs hall sensor TYP 688
Contextual Info: GaAs Hall Devices OH10003 OH003 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ

OH004

Abstract: OH10004 hall sensor Panasonic GaAs marking KR 4pin panasonic device marking examples
Contextual Info: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 4 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ

OH010

Abstract: OH10010 hall sensor 4pin
Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 1.5 ± 0.2 • Applications • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.)

OH008

Abstract: OH10008 hall sensor Panasonic GaAs
Contextual Info: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm 1.45 ± 0.05 0.9 ± 0.05 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field

hall sensor Panasonic GaAs

Abstract: OH10010 OH010
Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 φ 1.0±0.025 0 to 0.15 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ

4G2 hall

Abstract: hall sensor Panasonic GaAs OH009 OH10009
Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ

OH009

Abstract: OH10009 hall sensor Panasonic GaAs 4pin hall sensor
Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor + 0.2 2.8 − 0.3 + 0.2 0.65 ± 0.15 • Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the

panasonic device marking examples

Abstract: hall sensor 40 L
Contextual Info: GaAs Hall Devices OH10004 OH004 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10010 OH010 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.26±0.05 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ

OH008

Abstract: OH10008
Contextual Info: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 • Features 0.6±0.05 0.26±0.05 0.9±0.05 M Di ain sc te on na tin nc ue e/ d 0.6±0.1 4 0 to 0.15 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: Diodes SMD Type 200mW Surface Mount Zener Diode MMBZ5245BW Features Planar Die Construction General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Absolute Maximum Ratings Ta = 25 Parameter Forward Voltage Symbol Rating Unit VF 0.9

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10008 OH008 GaAs Hall Device Unit : mm Magnetic sensor 1.45±0.05 0.6±0.05 0.26±0.05 0.9±0.05 4 0 to 0.15 0.5±0.1 0.8±0.1 5° M Di ain sc te on na tin nc ue e/ d 1.45±0.05 2.85±0.25 3 0.6±0.1 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)

hall sensor 40 L

Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) 4 5° M Di ain sc te on na tin nc ue e/ d R(0.5) 2.8+0.2 –0.3 3 1.5+0.2 –0.3 • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)

4G2 hall

Abstract: OH009 OH10009
Contextual Info: GaAs Hall Devices OH10009 OH009 GaAs Hall Device Unit : mm Magnetic sensor 2.9+0.2 –0.05 • Features 1.9±0.1 0.16+0.1 –0.06 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ