KHB1D2N80D Search Results

10101DC

Contextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

660 tg diode

Contextual Info: S E M IC O N D U C T O R KHB1D2N80D/I TE CHNICAL DATA N C H A N N E L M O S FIELD EFFEC T T R A N SIS T O R G eneral Description KHB1D2N80D This planar stripe M OSFET has better characteristics, such as fast sw itching tim e, low on resistan ce, low gate charge and excellent

Contextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W