KIRDB0042EA Search Results

Contextual Info: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current

Contextual Info: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

G6849-01

Abstract: quadrant photodiode G6849 AK 1012
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

Contextual Info: InGaAs PIN photodiodes G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D∗. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided.

Contextual Info: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.

Contextual Info: InGaAs PIN photodiodes G12180 series Photosensitive area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.

A3179

Abstract: A3179-01 C1103-04 C4159-02 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

C4159-03

Abstract: c4159 e G8605-13 G8605-15 A3179 A3179-01 C1103-04 C4159-02 G8605 G8605-11
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

quadrant photodiode

Abstract: G6849 G6849-01
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

G6849

Abstract: G6849-01 quadrant photodiode
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

G3476-10

Contextual Info: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G a A s -P IN p h o to d io d e s h a v e a s m a ll le r m in a l c a p a c ita n c e an d th erefo re achieve fast response. In ad dition, these d ev ices feature low noise o p eratio n due to large shunt resistance.

G8370-81

Abstract: G8370-82 G8370-83 G8370-85
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G7150-16

Abstract: G7151-16
Contextual Info: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 0.45 x 1 (× 16 elements)

Contextual Info: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G aA s-P IN p h o to d io d e s h ave a sm all term in al c ap a citan c e and therefore achieve last response. In addition, these devices feature low noise operation due to large shunt resistance.

G8370-01

Abstract: G8370 G8370-02 G8370-03 G8370-05
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.

G7150-16

Abstract: G7151-16
Contextual Info: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP

G8376-01

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR near infrared detectors that feature high-speed response and low noise. Various active area sizes are provided to meet wide applications. Features Applications l Low noise, low dark current

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.

AW100

Contextual Info: PHOTODIODE InGaAs PIN photodiode G6849 series Quadrant type Features Applications l Active area l Spot light position detection l Measurement equipment G6849 : B2 mm quadrant element G6849-01: B1 mm quadrant element l Low noise l High reliability • General ratings

Contextual Info: PHOTODIODE InGaAs PIN photodiode array G7150/G7151-16 16-element array Features Applications l 16-element array l For simple measurement l Near Infrared NIR spectrophotometer • General ratings Parameter G7150-16 Package Active area G7151-16 Unit mm DIP

A778

Abstract: G6742 G6742-003 G6742-01
Contextual Info: PHOTODIODE InGaAs PIN photodiode G6742 series Surface-mount type Features Applications l Small chip carrier package l High reliability l Low price l Laser diode monitors • General ratings Parameter Package Active area G6742-003 ■ Absolute maximum ratings

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.