KJE X3 Search Results

kje x3

Contextual Info: REVISIONS X M ADE FRO M UJ CN J E L 231&9 P / 3 4 P R & 2 CM Z S 2 \5 D H A T 5 3 ,5 3 m m 0 " i^ 5 J O M S 4 CN Ì.W \ 3ZZ4-3 M I J U H A 90 t-» Im fn ) E ili U.' : i n ^ C f 9 i& 9 ^ % £ = - i1 8 D fR 6 F .“ u i ^ O iT ia n n ir i^ . 0 3 . 0 . R E F ,

cxk77b3611

Abstract: KJE 6A
Contextual Info: SONY CXK77B3611 32,768-WORD by 36-BIT HIGH SPEED BiCMOS SYNCHRONOUS STATIC RAM -5/6/7 Advanced Information Description The CXK77B3611 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 32,768-words by 36-bits. This synchronous SRAM integrates input registers, high speed SRAM, output registers/latches and write buffers onto

Contextual Info: 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58LC128K18B4, MT58LC64K32B4, MT58LC64K36B4; MT58LC128K18E1, MT58LC64K32E1, MT58LC64K36E1 2Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

capacitor poliester 100nf

Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Contextual Info: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

Contextual Info: l U II^ E a r n iM I 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, FLOW-THROUGH SYNCBURST SRAM 1M b S Y N C B U R S T S S R A M 3.3V Vdd, 3.3V I/O, Flow-Through S P MT58L32L32F' FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply Vdd

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

Contextual Info: PRELIMINARY l^ iic n a N 4 MEG X MT16LD464 X 64 DRAM MODULE DRAM 4 MEG x 64 M O n i l l F IV IV U U U b 32 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM M IC R O N I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

kje x6

Abstract: kje y4 KJE T5 256x16e KJE T3 kje y9 KJE T4 Y1 kje
Contextual Info: IS 42S 16128 128K Words x 16 Bits x 2 Banks 4-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES ADVANCE INFORMATION MAY 1998 DESCRIPTION Clock frequency: 100 MHz Two banks can be operated simultaneously and independently Single 3.3V power supply ISSI's4M b Synchronous DRAM IS42S16128 is organized as

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

TRANSISTOR SMD T1P

Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
Contextual Info: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products