KL DIODE 03 Search Results
KL DIODE 03 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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KL DIODE 03 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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EAF 801
Abstract: eaf801 RG2 DIODE diode rg2 diode UF DC PICO Ace 25 UG DIODE 62 diode TELEFUNKEN e tube 801
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Contextual Info: SIEMENS Silicon Low Leakage Diode Array BAV 170 • Low leakage applications • Medium speed switching times • Common cathode Type Marking Ordering Code tape and reel BAV 170 JXs Q62702-A920 Pin Configuration Package1) 3 » SOT-23 E * J Kl ° EHA0700* |
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Q62702-A920 OT-23 a535bos fl235b05 | |
transistor f390Contextual Info: 1DI2OOE-O55 200a POWER TRANSISTOR MODULE : Features • R if t S • High Voltage 7'J— Kl*3/ • A S O A 'IS i' •mmm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • 5 I & • Applications • Chopper Controls •DC^— |
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1DI2OOE-O55 transistor f390 | |
B212 diode
Abstract: bt 151 600 1DI200E-055 30S3 T151
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1DI2OOE-O55 E82988 l95t/R89 Shl50 B212 diode bt 151 600 1DI200E-055 30S3 T151 | |
TZE 3013
Abstract: IR7J
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I95t/R TZE 3013 IR7J | |
AJM2
Abstract: transistor b228
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2DI24OA-O55 E82988 l95t/R89 AJM2 transistor b228 | |
agh 003
Abstract: M210 TM25
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2DI15OZ-1OOU50A) agh 003 M210 TM25 | |
30H3
Abstract: T151 T460 T760
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6DI2OMS-O5O20A) fffij83 Ett-Tgl9S24^ l95t/R89 30H3 T151 T460 T760 | |
KRT 30
Abstract: DIODE 8236 LT 8236 30H3 EV1277 T151 T760 T930
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EV1277 25-35kg E82988 19S24 l95t/R89 KRT 30 DIODE 8236 LT 8236 30H3 T151 T760 T930 | |
CA10YContextual Info: ETG81-O5OA 30a POW ER T R A N S IS T O R M ODULE ^ Features *f <4 • 7 U - j f r - f U >• • hFE*''ifi5'-' • Jfeüïfê — Kl*3fit Including Free W heeling Diode High DC Current Gain Insulated Type ■ f f li â : A pplications • ’k .M.JlX't • |
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ETG81-O5OA l95t/R CA10Y | |
Contextual Info: 1DI75E-100 75a ' <r7 — h ±/<7 n .-)U v i Outline Drawings POWER TRANSISTOR MODULE • Features • High Voltage • 7 'J — Kl*3J& • A S O ^ '/ a ^ • Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • f f l i Ê ■ A p p lic a tio n s |
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1DI75E-100 I95t/R89) | |
Contextual Info: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode |
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6DI100A-050 I95t/RS9 Shl50 | |
transistor bc 151 equivalent
Abstract: transistor bc 241 bc 303 transistor diode b242 SRFE 1DI75E-100 T460 T760 T810 T930
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1DI75E-100 -40JWfltSfflKffidrWttà 95t/R89 Shl50 transistor bc 151 equivalent transistor bc 241 bc 303 transistor diode b242 SRFE T460 T760 T810 T930 | |
Transistor J3TContextual Info: 6DI100A-050 iooa ! Outline Drawings PO W ER TRA N SISTO R MODULE F e a tu re s • 7 l) —fc-f >J • h F E ^ iÜ l' • Kl*9/8c Including Free W heeling Diode High DC Current Gain Insulated Type • f f l i i : Applications •AC i — AC M otor Controls |
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6DI100A-050 95t/R89 Transistor J3T | |
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Contextual Info: 19-0323; R ev 3 ; 8 /9 6 >kl>JX I>l/l S i n g l e +5V, F u l l y I n t e g r a t e d , 1. 2 5 G b p s L a s e r Di ode D r i v e r Description C om plem entary enable inputs allow the MAX3261 to interface with open-fiber-control architecture— a feature not found in other 1,25Gbps laser diode drivers. |
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MAX3261 25Gbps MAX3261â 032mm) | |
2X40
Abstract: 87CNQ020A FST8115 FST8120 609G
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FST811 FST8120 FST8115Â FST8120* 2X40 87CNQ020A FST8115 FST8120 609G | |
2M84GContextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL |
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195GB066D SKM195GB066D 2M84G | |
Contextual Info: SKiM455GD12T4D1 '- KL M6P @,3+99 21.+*;<9+ 9=+-<A<+F Absolute Maximum Ratings Symbol Conditions IGBT 567I 'O ) M6 $6 'O ) JLQ M6 $6DV JKQQ 5 QQ E '.+019<,S ) TQ M6 UQL E JULQ E Y KQ 5 JQ ^9 '.+019<,S ) KL M6 K`L E '.+019<,S ) TQ M6 KJL E aQQ E $6DV ) UN$6WXV |
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SKiM455GD12T4D1 18DVI: | |
RF5RD501
Abstract: rf5rd301 TRANSISTOR 501 EK-032-8906 dc converter regulator high current converter circuit diagram switching regulator circuit CMD-6L
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EK-032-8906 RF5RD301/501 RF5RD301/501 47juF KDSailll7-45 RF5RD501 rf5rd301 TRANSISTOR 501 EK-032-8906 dc converter regulator high current converter circuit diagram switching regulator circuit CMD-6L | |
uPD6120
Abstract: npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102
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uPD6120 457sas /IPD6120 npd19 KL SN 102 PD1913 Li42 UD1943 ud271 27S9S KL 13 diode UPD6120C102 | |
6122G0
Abstract: NEC PD6121 455b kl diode 03 IC-6316B mpd 6120
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uPD6122 IR30-00 VP15-00 WS60-00 b427525 6122G0 NEC PD6121 455b kl diode 03 IC-6316B mpd 6120 | |
TDH-7070
Abstract: two change over relay 8 pin
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10Amps MIL-PRF-83536 SO-1056-8691 156lb TDH-7070 two change over relay 8 pin | |
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and |
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10Amps MIL-PRF-83536 SO-1056-8691 156lb | |
phillips zener
Abstract: Leach relay M83536
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10Amps MIL-PRF-83536 156lb SO-1056-8691 phillips zener Leach relay M83536 |