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    Untitled

    Abstract: No abstract text available
    Text: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM44C1012B KM44C1012B-6 KM44C1012B-7 KM44C1012B-8 130ns 150ns KM44C1012B 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its


    OCR Scan     		PDF Q01S74S KM44C1012B KM44C1012B 110ns KM44C1012B-7 130ns KM44C1012B-8 KM44C1012B-6 150ns 20-LEAD

    1Mx4

    Abstract: 20-PIN KM44C1000BLT KM44C1002BJ
    Text: M E M O R Y IC s FUNCTION G UIDE Dynamic RAM Continued Capacity 4 M bit Part Number Organization KM44C1000BZ 1Mx4 1Mx4 1Mx4 KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR 1Mx4 Speed(ns) CMOS Fast Page CMOS CMOS CMOS CMOS Fast Page Fast Page Fast Page


    OCR Scan     		PDF KM44C1000BZ KM44C1000BT KM44C1000BTR KM44C1OOOBV KM44C1000BVR KM44C1000BLP KM44C1000BU KM44C1000BLZ KM44C1000BLT KM44C1000BLTR 1Mx4 20-PIN KM44C1002BJ