KM48V2104C Search Results
KM48V2104C Price and Stock
Samsung Semiconductor KM48V2104CS60 |
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KM48V2104CS60 | 331 |
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Samsung Electro-Mechanics KM48V2104CK-62MX8 EDO DRAM, 60NS, PDSO28 |
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KM48V2104CK-6 | 20,147 |
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Samsung Electro-Mechanics KM48V2104CK-L62M X 8 EDO DRAM, 60 ns, PDSO28 |
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KM48V2104CK-L6 | 81 |
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KM48V2104C Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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KM48V2104CK-5 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CK-6 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CK-L-5 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CK-L-6 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CS-5 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CS-6 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CS-L-5 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 | |||
KM48V2104CS-L-6 |
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2M x 8-Bit CMOS Dynamic RAM with Extended Data Out | Original | 392.22KB | 21 |
KM48V2104C Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C2004CContextual Info: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K |
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KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil C2004C | |
Contextual Info: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K |
OCR Scan |
KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C | |
C2104CContextual Info: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K |
OCR Scan |
KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C 64ms/32ms C2104C | |
km48c2104Contextual Info: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K |
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KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil km48c2104 | |
4MB DRAM
Abstract: 4MX16 1MX16
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OCR Scan |
KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 | |
KMM372F213CK
Abstract: KMM372F213CS
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KMM372F213CK/CS KMM372F213CK/CS KMM372F213C 2Mx72bits KMM372F213C 300mil 16bits 48pin 168-pin KMM372F213CK KMM372F213CS | |
KM44C4105C-6
Abstract: KM44C16004
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OCR Scan |
KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004 | |
Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE 2Mx64 SODIMM 2MX8 Base Revision 2.0 November 1997 -1- Rev. 2.0 (Nov. 1997) KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE Revision History Version 2.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. |
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KMM466F203CS2-L KMM466F213CS2-L 2Mx64 KMM466F213CS2-L KMM466F20 | |
KMM332F213CS-LContextual Info: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic RAM high density memory module. The Samsung |
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KMM332F203CS-L KMM332F213CS-L KMM332F213CS-L KMM332F20 2Mx32bits 28-pinTSOPII 72-pin | |
KMM372F213CK
Abstract: KMM372F213CS KM48v2104
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KMM372F213CK/CS KMM372F213CK/CS KMM372F213C 2Mx72bits KMM372F213C 300mil 16bits 48pin 168-pin KMM372F213CK KMM372F213CS KM48v2104 | |
Contextual Info: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic Part Identification |
OCR Scan |
KMM332F203CS-L KMM332F213CS-L KMM332F213CS-L KMM332F20 2Mx32bits KMM332F203CS-L5/L6 28-pinTSOPII 72-pin | |
Contextual Info: KM M 374F203CK KM M 374F21 3CK DRAM MODULE KM M 37 4F203CK & K M M 3 7 4 F 2 1 3 C K EDO M o d e w i t h o u t b u ffe r 2M x 72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V FEATURES GENER AL DESCRIPTION The Samsung KMM374F20 1 3GK is a 2Mx72bits Dynamic |
OCR Scan |
374F203CK 374F21 4F203CK KMM374F20 2Mx72bits 300mil 168-pin -KMM374F203CK | |
Contextual Info: KMM374F203CK KMM374F213CK DRAM MODULE KMM374F203CK & KMM374F213CK EDO Mode without buffer 2M x 72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3CK is a 2Mx72bits Dynamic RAM high density memory module. The Samsung |
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KMM374F203CK KMM374F213CK KMM374F213CK KMM374F20 2Mx72bits 300mil 168-pin | |
Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic Part Identification |
OCR Scan |
KMM466F203CS2-L KMM466F213CS2-L KMM466F213CS2-L KMM466F20 2Mx64bits 466F203CS2-L cycles/128ms, 466F20 466F213CS2-L | |
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Contextual Info: DRAM MODULE KMM372F213CK/CS ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6 -0.5 to +4.6 |
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KMM372F213CK/CS 100Min 540Min) 08Min) 100Max 54Max) 200Max 08Max) KMM372F213CK/CS KM48V2104CK | |
Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2Mx8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic RAM high density memory module. The Samsung |
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KMM466F203CS2-L KMM466F213CS2-L KMM466F213CS2-L KMM466F20 2Mx64bits 400mil 144-pin | |
Contextual Info: KMM366F203CK KMM366F213CK DRAM MODULE KMM366F203CK & KMM366F213CK EDO Mode without buffer 2M x 64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3CK is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung |
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KMM366F203CK KMM366F213CK KMM366F213CK KMM366F20 300mil 168-pin 100Min | |
bck-01
Abstract: DA05 display S5L9274X01-E0R0 DA05 display datasheet DISPLAY DA05 hd1-M -DC5V mp3 player circuit diagram DA03 DA04 DA05
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S5L9274 64-LQFP-1010 S5L9274 16Mbit KM48V2100C KM48V2104C bck-01 DA05 display S5L9274X01-E0R0 DA05 display datasheet DISPLAY DA05 hd1-M -DC5V mp3 player circuit diagram DA03 DA04 DA05 | |
k2624Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D# |
OCR Scan |
KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624 |