KM616V1002AT Search Results

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

KM616V1002A

Abstract: SRAM sheet samsung
Contextual Info: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

KM616V1002A

Contextual Info: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.

256x16* STATIC RAM

Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
Contextual Info: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

KM616V1002A

Abstract: N-319
Contextual Info: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)

Contextual Info: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

DD312

Abstract: ics 0741 D0312
Contextual Info: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly

Contextual Info: CMOS SRAM KM616V1002A, KM616V1002AI 64K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N ER A L DESCRIPTION Fast Access Time 12,15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) O pe rati^ KM616V1002A - 1 2 : 170mA(Max.)

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

Contextual Info: KM616V1002A CMOS SRAM 6 4 Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL bESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)