KMB6D0NS30QA Search Results

C4125

Abstract: single gate "Shottky" Schottky Diode 40V 6A
Contextual Info: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the

Contextual Info: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the

DS24V

Contextual Info: SEM ICONDUCTOR KMB6D0NS30QA TECHNI CAL DATA N-Ch M O SF E T +SB D G E N E R A L D E S C R IP T IO N This trench MOSFET has better characteristics, such as fast switching tim e, low on re sista n c e , low g ate c h arg e and e x c e lle n t a v a la n ch e