KRX2 Search Results

KRX208E

Contextual Info: SEMICONDUCTOR KRX208E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BW 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BW KRX208E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX210E

Contextual Info: SEMICONDUCTOR KRX210E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking MN 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark MN KRX210E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX204E

Contextual Info: SEMICONDUCTOR KRX204E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BD KRX204E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX202U

Contextual Info: SEMICONDUCTOR KRX202U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KRX207E

Abstract: MARKING BF
Contextual Info: SEMICONDUCTOR KRX207E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BF KRX207E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX209U

Contextual Info: SEMICONDUCTOR KRX209U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX209U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

bt 2012

Abstract: KRX207U
Contextual Info: SEMICONDUCTOR KRX207U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BT 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BT KRX207U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

m krx209e

Abstract: KRX209E
Contextual Info: SEMICONDUCTOR KRX209E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BM 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BM KRX209E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX205U

Contextual Info: SEMICONDUCTOR KRX205U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BE KRX205U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX202E

Contextual Info: SEMICONDUCTOR KRX202E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.

KRX205E

Abstract: MARKING BE
Contextual Info: SEMICONDUCTOR KRX205E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BE 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BE KRX205E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRX204U

Contextual Info: SEMICONDUCTOR KRX204U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KRX209U

Contextual Info: SEMICONDUCTOR KRX209U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KRX201E

Contextual Info: SEMICONDUCTOR KRX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.

Contextual Info: SEMICONDUCTOR KRX201E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.

Contextual Info: SEMICONDUCTOR KRX204U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

Contextual Info: SEMICONDUCTOR KRX208U TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/3

Contextual Info: SEMICONDUCTOR KRX206U TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 4 1/3

Contextual Info: SEMICONDUCTOR KRX210E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ・Simplify circuit design. 1 6 2 5 3 4 A1 ・With Built-in bias resistors. C ・Including two devices in TES6.

Contextual Info: SEMICONDUCTOR KRX206E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 Pin.

TRANSISTOR BC 6 pnp

Abstract: KRX203E
Contextual Info: SEMICONDUCTOR KRX203E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A ᴌWith Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.

KRX201U

Contextual Info: SEMICONDUCTOR KRX201U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. DIM A A1 B 1 6 2 5 3 4 A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.

KRX204E

Contextual Info: SEMICONDUCTOR KRX204E TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A With Built-in bias resistors. 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Thin Extreme Super mini type with 6 pin.

KRX207U

Contextual Info: SEMICONDUCTOR KRX207U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C With Built-in bias resistors. A1 C Ultra Super mini type with 6 leads.