KS H 148 OA Search Results
KS H 148 OA Datasheets Context Search
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esc 75 BACKSHELL
Abstract: MIL-C-5015G 891 SERIES SOURIAU rolls-royce ms3456 backshell souriau 892
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MIL-C-5015G, esc 75 BACKSHELL MIL-C-5015G 891 SERIES SOURIAU rolls-royce ms3456 backshell souriau 892 | |
891 892
Abstract: 8950-5835 esc 75 BACKSHELL rolls-royce 8950-4101C 8950-4778 MS3456 m83723-24 L8912 8950A
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MIL-C-5015G, 891 892 8950-5835 esc 75 BACKSHELL rolls-royce 8950-4101C 8950-4778 MS3456 m83723-24 L8912 8950A | |
esc 75 BACKSHELL
Abstract: MS3143 8950-5835 8950-4778 MS3143HS 8950-4779 8950-F-28 esc 75 08 BACKSHELL ms3456 backshell 8950A
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MIL-C-5015G, ra950-340 esc 75 BACKSHELL MS3143 8950-5835 8950-4778 MS3143HS 8950-4779 8950-F-28 esc 75 08 BACKSHELL ms3456 backshell 8950A | |
lk 720
Abstract: Hynix memory 57V64820 57v64820hg
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HY57V64820HGT HY57V64820HG 864-bit 152x8. 400mi lk 720 Hynix memory 57V64820 57v64820hg | |
Contextual Info: a WHITE /MICROELECTRONICS WPN7216108UD2-10VG 128MBYTE 16Mx72 Synchronous DRAM (3.3V Supply) Unbuffered D IM M MODULE Optimized for ECC ADVANCED* GENERAL DESCRIPTION FEATURES • ■ Maximum frequency = 100MHz (tcc=1Oris) ■ ■ ■ ■ ■ ■ ECC Optimized |
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WPN7216108UD2-10VG 128MBYTE 16Mx72) 100MHz WPN7216108UD2-10VG 54-pin 400-mil 168-pin | |
STR 6267
Abstract: str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148
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51itzerland 3-15F, Omraniye-81257-Omraniye STR 6267 str f 6267 str 6267 f str 5707 STR F 9208 L datasheet str 5707 STR D 5707 str 6853 F918 f4148 | |
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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CQM1H-CPU51
Abstract: CQM1H-CPU21 CQM1-PA216 Omron CQM1H-CPU21 CQM1-PA203 CQM1H-CPU61 OMRON CQM1H-CPU11 CQM1-OC222 CQM1-ID211 CQM1H-MAB42
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CQM1H-ABB21 CQM1H-CPU51 CQM1H-CPU21 CQM1-PA216 Omron CQM1H-CPU21 CQM1-PA203 CQM1H-CPU61 OMRON CQM1H-CPU11 CQM1-OC222 CQM1-ID211 CQM1H-MAB42 | |
1.0KE28AContextual Info: SIE D niCRosEni coRP • bllSñbS □002053 aaa ■ Microsemi Corp. SCOTTSDALE, AZ SANTA ANA. CA nsc 1.0 K E 5 thru 1.0 K E 1 7 0 A For more information ca 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • AVAILABLE IN RANGES FROM 5.0 TO 170 VOLTS • AVAILABLE IN BIDIRECTIONAL FOR AC APPLICATIONS |
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0KE160A 0KE170 DKE170A 0KE170. 1.0KE28A | |
ds1607Contextual Info: DS1685/DS1687 P R E L IM IN A R Y DALLAS DS1685/DS1687 3 Volt/5 Volt Real Time Clock s e m ic o n d u c t o r FEATURES PIN ASSIGNMENT Incorporates Industry standard DS1287 PC clock plus enhanced features: PWR C 1 xi L 2 X2 C 3 ADOC 4 AD1 C 5 AD2 C 6 AD3 C 7 |
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DS1685/DS1687 DS1287 64-bit DS1687 24-PIN Pbl4130 ds1607 | |
ARRAY MICROSYSTEMS
Abstract: H.261 encoder chip S0020-0 videoflow H.261 codec chip XAD10 QCIF samsung XAD22
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KS0144 KS0144 KS0143 KS0144s 71b4142 0D311D1 ARRAY MICROSYSTEMS H.261 encoder chip S0020-0 videoflow H.261 codec chip XAD10 QCIF samsung XAD22 | |
KB910Q
Abstract: LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P
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HTW00 LA-2871 915PM /910GML M24C/M26P) KB910Q LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P | |
Contextual Info: MITSUBISHI ICs VCR M52364P/FP PLAYBACK/RECORDING FM SIGNAL PROCESSING (VHS, 8mm) DESCRIPTION The M52364 is a luminance FM signal processing semiconductor integrated circuit that incorporates a playback FM equalizer and recording low-pass and high-pass filters |
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M52364P/FP M52364 | |
OX36D-S-MR-R
Abstract: dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117
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12000-square-meter IS09000-2000, Min15 MXF3200 MXF3200A 12WCMXF3200) 6WCMXF3200A) OX36D-S-MR-R dox5 18M08 transistor z7m st z7m Bowei Integrated Circuits oxln50d TXM11 tt 2246 transistor K117 | |
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HYM7V641601Contextual Info: “H Y U N D A I V i i i V * 16MX64 BIT SDRAM UNBUFFERED DIMM K-SERIES / b a s e d o n 1 6M x 4 SD RA M , LV TTL, 2 /4 -B a n k s & 4 K /8 K -R e fre s h H YM 7V 64160Q / H Y M 7 V S 4 1 6 0 1 /H Y M 7 V 8 4 1 6 3 0 / H YM 7V S41631 DESCRIPTION The HYM 7V641600/ 641601/ 641630/ 641631 K-Series are high speed 3.3-Volt synchronous dynamic |
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16MX64 64160Q S41631 7V641600/ 16Mx4 54-pin 168-pin 0022uF HYM7V841 HYM7V641601 | |
Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
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stainless steel s130
Abstract: st 212 coaxial cable RS625 circular waveguide
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WC281 stainless steel s130 st 212 coaxial cable RS625 circular waveguide | |
Contextual Info: ACT 3 3.3 Volt Field Programmable Gate Arrays F eatu res • 3.3V Functionality specifications fully compliant with JEDEC Replaces up to 250 TTL Packages Replaces up to 100 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic Placement and Routing |
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20-pin | |
samwha electrolytic capacitor
Abstract: 415v two phase welding machine str CIRCUIT DIAGRAM SCR induction furnace circuit diagram 400 KVAR, 480 VAC, 3 phase Capacitor Bank induction furnace circuit diagram SCR based induction furnace circuit diagram induction furnace static var compensator Parallel resonance circuit induction furnace SMS BASED DC MOTOR SPEED CONTROLLER
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C4801 D-60528 66MOO samwha electrolytic capacitor 415v two phase welding machine str CIRCUIT DIAGRAM SCR induction furnace circuit diagram 400 KVAR, 480 VAC, 3 phase Capacitor Bank induction furnace circuit diagram SCR based induction furnace circuit diagram induction furnace static var compensator Parallel resonance circuit induction furnace SMS BASED DC MOTOR SPEED CONTROLLER | |
TA138
Abstract: TA280 3SB24 TA1225A 176-CPGA dece2x4
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and73 TA138 TA280 3SB24 TA1225A 176-CPGA dece2x4 | |
Contextual Info: Prelim inary KMM377S823BT1 SD R A M M O D U L E KMM 37 7 S8 2 3B T 1 S D RAM DIMM Intel 1.0 ver. Base 8M x72 SDRAM DIMM with PLL & Register based on 8Mx8, 4B anks 4K Ref., 3.3V Synchronous DRAM s with SPD FEATURE GE NER AL DESCRIPTION • P e rfo rm a n c e ra n g e |
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KMM377S823BT1 18-bits | |
1225XL
Abstract: A1240XL LM 7447
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1200X 20-Pin 16-Bit 1200XL field505 1225XL A1240XL LM 7447 | |
ITT142Contextual Info: TO SH IBA THMY6440D1EG-10 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440D1EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board. |
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THMY6440D1EG-10 304-WORD 64-BIT THMY6440D1EG TC59S6416FT THMY6440D1 ITT142 | |
um61256
Abstract: um61256fs UM61256F ilc 7106 TAG to 810 nj 062 JRC JRC 7106 7551-1 2-035L ICl 7106
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HB66C6464BB HM62C3232FP) 256Kbit UM61256FS HB66C6- BP7/496/500/ABC/MGK um61256 UM61256F ilc 7106 TAG to 810 nj 062 JRC JRC 7106 7551-1 2-035L ICl 7106 |