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GR-1089-CORE Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400	Original	PDF	TB0640H TB4000H 10/1000us 8/20us GR-1089-CORE TB0720H TB0900H TB1100H TB1300H TB4000H
GR-1089-CORE Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400	Original	PDF	TB0640H TB4000H 10/1000us 8/20us GR-1089-CORE TB0720H TB0900H TB1100H TB1300H TB4000H
TB400 Abstract: TB4000H GR-1089-CORE TB0640H TB0720H TB0900H TB1100H TB1300H Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @	Original	PDF	TB0640H TB4000H 10/1000us 8/20us 29-April-2003, KSWB04 TB400 TB4000H GR-1089-CORE TB0720H TB0900H TB1100H TB1300H
Untitled Abstract: No abstract text available Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @	Original	PDF	TB0640H TB4000H 10/1000us 8/20us
GR-1089-CORE Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H Text: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @	Original	PDF	TB0640H TB3500H 10/1000us 8/20us 26-Oct-2001, KSWB04 GR-1089-CORE TB0720H TB0900H TB1100H TB1300H TB3500H
GR-1089-CORE Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H Text: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @	Original	PDF	TB0640H TB3500H 10/1000us 8/20us 07-May-2001, KSWB04 GR-1089-CORE TB0720H TB0900H TB1100H TB1300H TB3500H