KTB1424 Search Results

B1424

Abstract: KTB1424
Contextual Info: SEMICONDUCTOR KTB1424 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B1424 Y 816 No. Item 1 KEC K KEC CORP. 2 Device Name B1424 KTB1424 3 hFE Grade Y - 4 Lot No. 816 98.06.23 Revision No : Marking 00 Description

KTD2424

Abstract: Darlington Transistor KTB1424 NPN VCBO 80V
Contextual Info: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) C P S Complementary to KTB1424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

KTB1424

Abstract: KTD2424
Contextual Info: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A FEATURES C DIM A B C D E F P F U ᴌHigh DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) E S G B ᴌComplementary to KTB1424. R T L UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. • Complementary to KTD2424. (V ce = -2 V , IC=-1A) MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT

KTB1424

Abstract: Darlington Transistor KTD2424
Contextual Info: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) C P S Complementary to KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: SEMICONDUCTOR KTD2424 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=2V, IC=1A) C P S Complementary to KTB1424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

Korea Electronics TRANSISTOR

Abstract: KTB1424 KTD2424
Contextual Info: K E C SEMICONDUCTOR KTD2424 TECHNICAL D A TA EPITAXIAL PLANAR NPN TRANSISTOR KOREA ELECTRONICS CO.,LTD. GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. (VCe=2V, Ic=1A) • Complementary to KTB1424. MAXIMUM RATINGS (Ta=25°C)

KTB1424

Abstract: KTD2424
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD2424 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. • Complementary to KTB1424. IC=1A) (V ce =2V, MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT CHARACTERISTIC

Contextual Info: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) C P S Complementary to KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage

KTB1424

Abstract: KTD2424
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTB1424 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. FEATURES • High DC Current Gain : hFE=3000 Min. (VCe =-2V , Ic=-1A) • Complementary to KTD2424. MAXIMUM RATINGS (Ta=25°C)

TO-220IS

Abstract: KTB1424 KTD2424
Contextual Info: SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A FEATURES C DIM A B C D E F P F U ᴌHigh DC Current Gain : hFE=3000 Min. (VCE=-2V, IC=-1A) E S G B ᴌComplementary to KTD2424. R T L UNIT Collector-Base Voltage

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION