KTC1027 Search Results

Contextual Info: WEITRON KTC1027 NP N Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) value Units VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO Parameter Symbol Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KTC1027 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Complementary to KTA1023 z High Voltage Applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE A ᴌComplementary to KTA1023. P DEPTH:0.2 G C MAXIMUM RATING Ta=25ᴱ RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO

ktc1027

Abstract: transistor ktc1027 ktc1027 transistor KTA1023 uPI Semiconductor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1023 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (Ta =25℃ unless otherwise noted) B Symbol V CBO B

KTC1027

Abstract: ktc1027 transistor ra-100 KTA1023 transistor ktc1027
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage

transistor A1023

Abstract: transistor A1023 y A1023 A1023 Y a1023 transistor A1023 K Y kec a1023 KTC1027 A-1023 KTA1023
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KT A 1023 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027. MAXIMUM RATINGS Ta=25 °C SYMBOL RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage

KTA1023

Abstract: transistor ktA1023 ktc1027 ktc1027 transistor transistor ktc1027
Contextual Info: SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A Complementary to KTC1027. P DEPTH:0.2 G C MAXIMUM RATING Ta=25 RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120

ktc1027 transistor

Abstract: transistor kta1023 KTA1023 KTC1027 kta1023* transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1023 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (T A =25℃ unless otherwise noted) B Symbol V CBO B

ktc1027

Abstract: KTA1023
Contextual Info: SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A ᴌComplementary to KTC1027. P DEPTH:0.2 C Q RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage

ktc1027 transistor

Abstract: transistor ktc1027 KTA1023 KTC1027
Contextual Info: SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A ᴌComplementary to KTA1023. P DEPTH:0.2 C Q RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage

transistor ktc1027

Abstract: ktc1027 ktc1027 transistor
Contextual Info: KTC1027 KTC1027 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current ICM: 0.8 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

ktc1027

Abstract: KTA1023 transistor ktA1023
Contextual Info: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTA1023 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027. MAXIMUM RATINGS Ta=25 °C SYMBOL RATING UNIT Collector-Base Voltage V CBO -120 V Collector-Emitter Voltage

transistor ktA1023

Abstract: ktc1027 transistor ktc1027 KTA1023 ktc1027 transistor
Contextual Info: KTA1023 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTER 7.800 8.200 3. BASE Features — 1 2 3 0.600 0.800 0.350 0.550 Complementary to KTC1027 13.800 14.200 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) B Symbol V CBO B V CEO B V EBO

KTC1027

Abstract: ktc1027 transistor transistor ktc1027
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC1027 TO-92L TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current 0.8 A ICM: Collector-base voltage 120

C1027

Abstract: C-1027 c1027 transistor transistor c1027 ktc1027 transistor equivalent c1027 hFE kec TO-92L transistor c1027 equivalent how does transistor c1027
Contextual Info: SEMICONDUCTOR KTC1027 MARKING SPECIFICATION TO-92L PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description 1 Device Name C1027 KTC1027 2 Lot No. 816 98.06.23 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week 3 KEC K KEC CORP. 4 hFE Grade

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC