Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KU 1140 Search Results

    KU 1140 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TPS61140DRCR
    		Texas Instruments Dual, 2x 27V, 700mA Switch, 1.2MHz Boost Converter with Single Inductor White LED and OLED Driver 10-VSON -40 to 85 Visit Texas Instruments Buy
    JM38510/11402BGA
    		Texas Instruments JFET Input Operational Amplifiers 8-TO-99 -55 to 125 Visit Texas Instruments
    HPA01140ATPHDRMQ1
    		Texas Instruments 4-Channel Automotive Digital Amplifiers 64-HTQFP -40 to 105 Visit Texas Instruments
    M38510/11402BGA
    		Texas Instruments JFET Input Operational Amplifiers 8-TO-99 -55 to 125 Visit Texas Instruments

    KU 1140 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FLM1011-6F

    Contextual Info: FLM1011-6F -FEATURES X, Ku-Band Internally Matched FET • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm


    OCR Scan     		FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 PDF

    Contextual Info: Industrial Automation Company Industrial Devices and Components Division H.Q. Measuring Components Department E5AR/ER Digital Controller DeviceNet Communications OMRON Corporation Shiokoji Horikawa, Shimogyo-ku, Kyoto, 600-8530 Japan Tel: 81 75-344-7080/Fax: (81)75-344-7189


    Original     		75-344-7080/Fax: NL-2132 2356-81-300/Fax: H124-E1-01 847-843-7900/Fax: Singapo85 omron247 PDF

    SM 8611

    Contextual Info: DOCUMENT NUMBER NCD-64F2-01 SVA-S Series Single-Mode PLUG TYPE ATTENUATOR TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Components Sales Dept. 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261 JAPAN Telephone : 043-211-1214 -1215 Facsimile : 043-211-8035


    Original     		NCD-64F2-01 SM 8611 PDF

    Contextual Info: CMM1430-KU 13.75 to 14.5 GHz 1 Watt Power Amplifier Preliminary Product Information December 2002 1 of 2 Features ❏ 32 dBm (Typ.) Saturated Output Power ❏ 34.5 dB (Typ.) Linear Gain ❏ Fully Matched ❏ Unconditionally Stable ❏ Copper/Molybdenum Flange Package


    Original     		CMM1430-KU CMM1430-KU PDF

    Contextual Info: CMM1430-KU 13.75 to 14.5 GHz 1 Watt Power Amplifier Preliminary Product Information August 2002 1 of 2 Features ❏ 32 dBm (Typ.) Saturated Output Power ❏ 34.5 dB (Typ.) Linear Gain ❏ Fully Matched ❏ Unconditionally Stable ❏ Copper/Molybdenum Flange Package


    Original     		CMM1430-KU CMM1430-KU PDF

    ku vsat amplifier

    Abstract: CMM1430-KU celeritek amplifier
    Contextual Info: CMM1430-KU 13.75 to 14.5 GHz 1 Watt Power Amplifier Preliminary Product Information April 2002 1 of 2 Features ❏ 32 dBm (Typ.) Saturated Output Power ❏ 34.5 dB (Typ.) Linear Gain ❏ Fully Matched ❏ Unconditionally Stable ❏ Copper/Molybdenum Flange Package


    Original     		CMM1430-KU CMM1430-KU ku vsat amplifier celeritek amplifier PDF

    Contextual Info: DOCUMENT NUMBER NCD-64F4-01 SVA-P Series Multi-Mode PLUG TYPE ATTENUATOR TECHNICAL SPECIFICATIONS Seiko Instruments Inc. Components Sales Dept. 8, Nakase 1-Chome Mihama-ku, Chiba-shi, Chiba-ken 261 JAPAN Telephone : 043-211-1214 -1215 Facsimile : 043-211-8035


    Original     		NCD-64F4-01 NAE09F01 PDF

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F PDF

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04 PDF

    FLM1011-6F

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F V4888 PDF

    Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm Typ. • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 29% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 10.7 to 11.7GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM1011-4F -46dBc 50ohm FLM1011-4F 25deg PDF

    FLM-10

    Abstract: 223-28 FLM1011-12F
    Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-12F -45dBc FLM1011-12F FCSI0598M200 FLM-10 223-28 PDF

    FLM1011-6F

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 PDF

    fujitsu gaas fet

    Abstract: FLM1011-3F
    Contextual Info: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-3F -46dBc FLM1011-3F fujitsu gaas fet PDF

    Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-12F -45dBc FLM1011-12F PDF

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F Vol88 PDF

    FLM1011-8F

    Abstract: FLM1011
    Contextual Info: FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-8F -46dBc FLM1011-8F FLM1011 PDF

    Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1011-4F -46dBc FLM1011-4F FCSI0598M200 PDF

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 PDF

    Contextual Info: FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		FLM1011-8F -46dBc FLM1011-8F FCSI0598M200 PDF

    Contextual Info: FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-12F -45dBc FLM1011-12F Gate-Source88 PDF

    Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200 PDF

    FLM1011-4F

    Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-4F -46dBc FLM1011-4F FCSI0598M200 PDF

    pt 11400

    Abstract: FLM1011-4F
    Contextual Info: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1011-4F -46dBc FLM1011-4F pt 11400 PDF