KU 745 Search Results

Contextual Info: ROHM Group Rohm Korea Corporation 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Rohm Co., Ltd. Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.

Contextual Info: ROHM Group ROHM Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 ROHM Co., Ltd. Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075)311-2121 Fax: (075)315-0712 ROHM-Wako (Malaysia) SDN. BHD.

2604A

Contextual Info: ROHM Group Rohm Co., Ltd. Head office Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.

rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm

Contextual Info: ROHM Group Rohm Co., Ltd. Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.

Contextual Info: ROHM Group ROHM Co., Ltd. Head office ROHM Korea Corp. 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: 075 311-2121 Fax: (075) 315-0712 371-11, Kasan-Dong, Kum chon-ku, Seoul 152-022, Korea Tel: (2) 8182-600 Fax: (2) 864-9343 Tokyo branch ROHM-Wako (Malaysia) SDN. BHD.

FAX96

Abstract: 2604A CA95131 747046
Contextual Info: ROHM Group ROHM Co., Ltd. Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: 075 311 -2121 Fax: (075) 315-0712 Tokyo branch 3-14-31, Takanawa, Minato-ku, Tokyo 108, Japan Tel: (03) 3445-5321 Fax: (03)3445-5360 Design centers Kyoto Tel: (075)311-2121 Fax:(075)314-6559

Contextual Info: ROHM Group ROHM Co., Ltd. Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: 075 311-2121 Fax: (075) 315-0712 Tokyo branch 3-14-31, Takanawa, Minato-ku, Tokyo 108, Japan Tel: (03) 3445-5321 Fax: (03) 3445-5360 Design centers Kyoto Tel: (075) 311-2121 Fax: (075) 314-6559

Contextual Info: JY SERIES n FOOTPRINT l Schematics BOTTOM VIEW l PC board mounting hole layout (BOTTOM VIEW) Unit: mm Fujitsu Components International Headquarter Offices Japan Fujitsu Component Limited Gotanda-Chuo Building 3-5, Higashigotanda 2-chome, Shinagawa-ku Tokyo 141, Japan

fujitsu

Contextual Info: FTR-K1L SERIES n FOOTPRINT Fujitsu Components International Headquarter Offices Japan Fujitsu Component Limited Gotanda-Chuo Building 3-5, Higashigotanda 2-chome, Shinagawa-ku Tokyo 141, Japan Tel: 81-3 5449-7010 Fax: (81-3) 5449-2626 Email: promothq@ft.ed.fujitsu.com

fujitsu

Abstract: Fujitsu JV
Contextual Info: JV SERIES n FOOTPRINT l Schematics BOTTOM VIEW l PC board mounting hole layout (BOTTOM VIEW) Unit: mm Fujitsu Components International Headquarter Offices Japan Fujitsu Component Limited Gotanda-Chuo Building 3-5, Higashigotanda 2-chome, Shinagawa-ku Tokyo 141, Japan

Contextual Info: SANSHA ELECTRIC MFG CO 37E J> SANSHA ELECTRIC MFG,C0.,LTD. Head Office 2-14-3, Awaji, Higashiyodogawa-ku, Osaka 533, Japan Phone: 06 325-3863 FAX:(06)321-0355 Telex:5233617 SANREX J Cable Address:SUPERSANREX OSAKA Branchee Tokyo, Nagoya, Takasakl, Fukuoka

Contextual Info: VE SERIES n FOOTPRINT l Schematics BOTTOM VIEW l PC board mounting hole layout (BOTTOM VIEW) VE-M type VE type Unit: mm Fujitsu Components International Headquarter Offices Japan Fujitsu Component Limited Gotanda-Chuo Building 3-5, Higashigotanda 2-chome, Shinagawa-ku

FLK012WF

Contextual Info: FLK012WF X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

Contextual Info: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general

EUDYNA

Abstract: FLK057WG
Contextual Info: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general

Contextual Info: FTR-P5 SERIES n FOOTPRINT • PCB mounting hole layout bottom view 5 5 5 • Schematic (bottom view) (1.2) 1 5.5 2 5-Ø1.4 5 4 3 Unit: mm Fujitsu Components International Headquarter Offices Japan Fujitsu Component Limited Gotanda-Chuo Building 3-5, Higashigotanda 2-chome, Shinagawa-ku

S-7600A

Abstract: S7600 S7600A UART TO TCP IP 0X13 0X36 0x10-0x13 serial port config 7325 mips
Contextual Info: S-7600A TCP/IP NETWORK STACK LSI - Revision 1.3 Hardware Specification S-7600A TCP/IP Network Stack LSI Components Marketing Dept. Marketing Section 2 Phone +81-43-211-1028 Fax +81-43-211-8035 8, Nakase 1-chome, Mihama-ku Chiba-shi, Chiba 261-8507, Japan Seiko Instruments Inc.

Contextual Info: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general

fujitsu gaas fet

Abstract: FLK057WG
Contextual Info: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general

Contextual Info: FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general

MGF1323

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.

active and passive electronic components difference

Abstract: philips 561 active and passive electronic components how to make an electronics components testing board philips hurksestraat 19 Distributors and Sales Partners
Contextual Info: 8004-1 Components broch. MA Page 2 Region Asia Pacific PHILIPS JAPAN LTD. B.G. Passive Comp. Asia/Pacific 13-37, Kohnan 2-chome Minato-ku, Tokyo 108 JAPAN Fax +81 3 3740 5305 Region Latin America PHILIPS DO BRASIL LTDA Rua do Rócio, 220 - 5° e 6° Caixa Postal 7383

Contextual Info: m ìm n FLK012WF T U JIO U X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK012WF is a power GaAs FET that is designed for general

F-1303

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed metal-ceramic