L 9821 Search Results

1128C-02

Contextual Info: TOP VIEW rh BOTTOM VIEW F R E E S C A L E SEMICONDUCTOR, ALL R I G H T S RESERVED. TITLE: INC. MECHANICAL OUTLINE PBGA, l o w p r o f i l e , 196 I/O, 15 X 15 PKG, 1 MM PITCH M AP SIDE VIEW 0 0 .1 5 A B C 0 0 .0 8 ® A PRINT VERSION NOT TO SCALE DOCUMENT NO: 98A R H 98217A

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

9821

Contextual Info: CE IL PLAN EST EST UN DOCUMENT SUSCEPTIBLE CONTROLE D'ETRE PAR REVISE. TYCO POUR ELECTRONICS OBTENIR LA THIS IT CORPORATION. DERNIERE REVISION, DR A WI NG I S IS SUBJECT A C O N T R O L L E D D O C U M E N T F OR T Y C O E L E C T R O N I C S C O R P O R A T I O N

Contextual Info: Surface Mount PIN Diode Limiter LM202802-L-C-300 Series Datasheet Features • Surface Mount Limiter in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Incorporates PIN Limiter Diodes, D.C. Blocks & D.C. Return • Higher Peak Power Handling than Plastic 100 W Peak Power

pin diode limiter

Abstract: CS300 RF limiter PIN diode LM202802-L-C-300 9821
Contextual Info: Surface Mount PIN Diode Limiter LM202802-L-C-300 Series Datasheet Features • Surface Mount Limiter in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Incorporates PIN Limiter Diodes, D.C. Blocks & D.C. Return • Higher Peak Power Handling than Plastic 100 W Peak Power

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. O A B E K D FEATURES: C G • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

Contextual Info: 2N3055 m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 lc 15 A Ib 7.0 A L - . 6 7 5 «J I MAX. [ .1 3b MAX. T V2bQ filò -L ÏÏ SE A U N G

ALR100

Abstract: ASI10514
Contextual Info: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz

L9821

Abstract: charge pump relay drive circuit
Contextual Info: SGS-THOMSON L 9821 RiflDeTOIlLICTIOKIDeS HIGH SIDE DRIVER . 25A PEAK OUTPUT CURRENT • Ron = MULTIPOWER BCD TECHNOLOGY 1 0 0 m i2 . DIAGNOSTIC AND PROTECTION FUNCTIONS ■ jiP COMPATIBLE > GROUNDED CASE . INRUSH CURRENT LIMITING CIRCUIT DESCRIPTION The L9821 High Side Driver realized with Multipo­

D 1803 TRANSISTOR

Abstract: 333 045 ALR175 transistor 1803
Contextual Info: ALR175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI ALR175 is common Base transistor Designed for 1215 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D G FEATURES: L N 14 A PDISS 45 V TSTG -65 °C to +200 °C

1N253

Contextual Info: asi 1N253 SILICON POWER RECTIFIER PACKAGE STYLE D O - 4 DESCRIPTION: s Y The ASI 1N253 is Designed for General Purpose Power Supply Applications. O L L*_ M ^ IN ^ r-s •Ö Ni-J 1.0 A @ T C= 135 °C V TERM 2 1 100 V -65 °C t o +170 °C Tj 0.405 10.28 b 0 250

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.

ALR325

Abstract: ASI10516
Contextual Info: ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI ALR325 is Designed for 1200 – 1400 MHz, L-Band Applications. 2xB C F E D G FEATURES: L N 18.75 A PDISS 55 V TSTG -65 °C to +200 °C θJC 0.10 °C/W

ALR200

Abstract: D 1803 TRANSISTOR ASI10515
Contextual Info: ALR200 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG A DESCRIPTION: A 4x .062 x 45° The ASI ALR200 is Designed for 1200 – 1400 MHz, L-Band Applications. 2xB C F E D G FEATURES: L N 16 A 40 V PDISS TSTG -65 °C to +200 °C θJC 0.26 °C/W M A XIM UM

LB 1639

Abstract: MN6133AS JZ 1-1A 1689-4 AVR 0856 T 1734 41.639 8CL1
Contextual Info: MN6133RS - CL! CL1/CL2 CpF] 0 / 6 8 FCR4.19M5 Vdd- 5 CV] Fig.a-d Ta" 20 Cdeg] Typical 7 VIH -5 3 1 1 -1.1 -1.2 -4 -1 - . b. V2fii¿V2L cfa 7 4.7 4.9 5 1 5 V2H -•— 3 1 I V2L *— — is -1 1 1 f i l i l j 5.3 5.6 S.6 ”*? “*3 "•? Zh? -1.7 t d. Trise CuS3

Contextual Info: 4 THIS DRAWING C IS 3 UNPUBLISHED. RELEASED FOR ALL COPYRIGHT PUBLICATION RIGHTS LOC DIST R E V I S I ON S RESERVED. DESCRIPTION E C R - I 0 - 0 20 2 1 8 2 1JUN201 I PS RRP NOTES T O L E R A N C E S U N L E S S O T H E R W I S E S P E C I F I E D : ± 0 0 5,

MC 1047P

Abstract: MC7410L MC478 MFC4000 C9719F 9722P Transistor C3153 germanium transistor 725P SPRAGUE schematic of mc1466
Contextual Info: LINEAR CIRCUITS Linear Application Selector Guide Operational Amplifiers Regulators Microwave Devices Special-Purpose Circuits Consumer Products MICROCIRCUIT COMPONENTS GENERAL INFORMATION Index D IG ITA L CIRCUITS MECL MECL II MC1000/MC1200 Series MHTL MC660 Series

1336Hz

Contextual Info: H O LTEK r r H T 9 9 U 4 10 P r e lim in a r y Enhanced Cordless Phone Controller P a te n t P en d in g: 87208775 R.O.C. , 98214300.1 (P.O.C) Features • O perating voltage: 2.0V~5.2V • • O p e r a t i o n c u r r e n t c l m A m a x . @V d d = 2 .5 V

Contextual Info: Informationen DC-Axiallüfter Zubehör DC-Radiallüfter 238 246 248 251 254 AC-Radiallüfter AC-Axiallüfter ACmaxx / GreenTech EC-Kompaktventilatoren DC-Lüfter - Specials Schutzgitter Filter-Schutzgitter Einströmdüsen Anschlusskabel / Zubehörteile Anschlussbilder

J162

Abstract: transistor j162 SATCOM ASAT35L
Contextual Info: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting

MRA1214-55H

Abstract: common base transistor
Contextual Info: MRA1214-55H MICROWAVE TRANSISTOR DESCRIPTION: The MRA1214-55H is a Common Base Transistor Designed for Long Pulse High Reliability L-Band Radar Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching PACKAGE - .400 x .400 2NL FLG

HV1011-1000L

Contextual Info: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness