L BAND RADAR Search Results
L BAND RADAR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLL1214-35 |
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L-band radar LDMOS driver transistor |
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TLC32044IFK |
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TLC32044 - Voice-Band Analog Interface Circuits |
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TLC32044MFK/B |
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TLC32044 - Voice-Band Analog Interface Circuits |
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TLC32044IN |
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TLC32044 - Voice-Band Analog Interface Circuits |
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TLC32044EFN |
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TLC32044 - Voice-Band Analog Interface Circuits |
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L BAND RADAR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
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HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz | |
L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
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HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400 | |
Radar
Abstract: diode gp 429 HV400 hvvi transistor 1150
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HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE Radar diode gp 429 HV400 hvvi transistor 1150 | |
NI-400
Abstract: diode gp 429 HV400
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HVV1012-050 HVV1012-050 HVV1012-050MHz, Pulsed10 HVV1012-060 1025-1150MHz, 10sPACKAGE NI-400 diode gp 429 HV400 | |
HVV1214-250L
Abstract: hvvi
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HVV1214-250L HVV1214-250L 1200MHz 1400Mhz EG-01-PO16X1 hvvi | |
500W TRANSISTOR
Abstract: hvvi
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HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi | |
Contextual Info: Part Number: Integra ILD1214EL40 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon LDMOS FET High Power Gain Excellent thermal stability Gold Metal Part number ILD1214EL40 is designed for L-Band radar applications operating over the 1.215-1.400 GHz instantaneous frequency band. |
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ILD1214EL40 ILD1214EL40 16ms/50% ILD1214EL40-REV-NC-DS-REV-D | |
bd 36 930Contextual Info: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a |
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IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-B bd 36 930 | |
diode gp 429
Abstract: HV400
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HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi diode gp 429 HV400 | |
transistor s 1014
Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
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HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200 | |
Radar
Abstract: diode gp 429 HV400
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HVV1012-100 HVV1012-100 1025-1150Avionics 1025-1150MHz, 429-HVVi Radar diode gp 429 HV400 | |
ATC100AContextual Info: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 PINNING - SOT467C FEATURES • High power gain |
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M3D381 BLL1214-35 OT467C SCA74 613524/01/pp8 ATC100A | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A |
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M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10 | |
ATC200B
Abstract: BLL1214-250 MLD861
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M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10 ATC200B BLL1214-250 MLD861 | |
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BLL1214-250Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Preliminary specification 2002 Jan 10 Philips Semiconductors Preliminary specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES • High power gain |
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M3D379 BLL1214-250 OT502A SCA73 BLL1214-250 | |
475 50K
Abstract: 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
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M3D381 BLL1214-35 OT467C OT467C) SCA74 613524/01/pp8 475 50K 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications | |
Contextual Info: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of |
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IB1214M375 IB1214M375 IB1214M375-REV-PR1-DS-REV-NC | |
Contextual Info: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating |
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IB1011S350 IB1011S350 1090MHz. D1977-2 IB1011S350-REV-NC-DS-REV-NC | |
Contextual Info: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT L-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over |
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IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C | |
Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating |
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IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A | |
D1790Contextual Info: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating |
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IB1011S70 IB1011S70 1090MHz. IB1011S70- D1790 | |
D1788Contextual Info: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating |
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IB1011S250 IB1011S250 1090MHz. IB1011S250-REV-NC-DS-REV-A D1788 | |
Contextual Info: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over |
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IB1214M32 IB1214M32 IB1214M32-REV-NC-DS-REV-B | |
Contextual Info: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating |
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IB1214M150 IB1214M150 IB1214M150-REV-NC-DS-REV-A |