L TO KU BAND AMPLIFIERS Search Results

MGF4919G

Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically

MGF4919

Abstract: MGF4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The

low noise hemt transistor

Abstract: MGF4714CP InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a

TGS 822

Contextual Info: < 8$+5 &#6# 27/2 9+6* +06' 4#6'& # ' 241&7%6 52'%+(+%#6+10 25/1& <K.1) 914.&9+&' *'#&37#46'45  ' *#/+.610 #8'07' %#/2$'. %#  6'.'2*10'  (#:  +06'40'6 *662999<+.1)%1/ 1999 by ZiLOG, Inc. All rights reserved. Information in this publication concerning the devices, applications, or technology described is intended to suggest possible uses and may be superseded. ZiLOG, INC.

Contextual Info: TC4711 PRELIMINARY INFORMATION Ku B A N D P O W E R F E T G a A s F I E L D E F F E C T T R A N S I S T O R FEATURE S 21 dBm output power at 1dB gain compression High associated gain : 8dB @14.5GHz Low source inductance High power added efficiency : 25% @14.5GHz

Contextual Info: g V w T g q AMFW SERIES AMPLIFIERS ULTRA LOW NOISE Ku-BAIMD LIMA FEATURES • Noise Temperatures from 6 5 K • W eatherproof Housing • 3-Year Product W arranty OPTIONS • • • • • • • Integrated 1 1 0 /2 2 0 VAC Power Supply Integrated Fault Alarm Outputs

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

LA6462D

Abstract: 2064C 2064B LA6462S 3032B-M8IC
Contextual Info: O f dering number : EN 2064C NO.2064B LA6462D.6462S.6462M Monolithic Linear IC SAXYO High-Performance Dual Operational Amplifiers i X "X . The LA6462D,S,M consist of two lndepedent, internally p y i ^ c o m p e V f ^ t e d operational amplifiers. They feature low noise, high speed, wide band. Appli­

RV4558D

Abstract: RC4558P equivalent
Contextual Info: RC4558, RC4558Y, RM4558, RV4558 DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS SLOSQ73 - MARCH 1976 - REVISED AUGUST 1991 • • • • • • • • • Continuous-Short-Circuit Protection Wide Common-Mode and Differential Voltage Ranges No Frequency Compensation Required

Contextual Info: SGS-THOMSON li* ^ g [iL [ÌO T (o )M S L S 4 0 4 HIGH PERFORMANCE QUAD OPERATIONAL AMPLIFIERS • ■ ■ ■ ■ ■ SINGLE OR SPLIT SUPPLY OPERATION VERY LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT

5000CL

Contextual Info: TAS-5000 SERIES Tracking Antenna System TTAS-5000-L TAS-5000-S TTAS-5000-S TAS-5000-CL TTAS-5000CL TAS-5000-CH TTAS-5000CH TAS-5000150-40 TTAS-5000150-40 Receive Receive/ Transmit fixed diplexer Receive Receive/ Transmit (fixed diplexer) Receive Receive/

Contextual Info: OPERATIONAL AMPLIFIERS W9Ê OPA62Q Or, Call Customer Service al 1-8S0-548-6132 USA Only Wideband Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • LOW NOISE 8-PIN DIP, SOIC PACKAGES AND DIE

oscillator tunnel diode

Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
Contextual Info: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A

MGF2415

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2415A, power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band ampli­ fiers. FEATURES • High output power P1dB = 27.5 dBm TYP. @ 14.5 GHz

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety

MGF2445A

Abstract: Scans-0065801 n-channel 4336
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445A MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs The M G F2445A , power GaAs FET with an N-channel schottky gate , is designed fo r use in S to Ku band am pli­ fiers. 2 - 01.6 FEATURES

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z

MGFC1403

Abstract: FET Spec sheet s3v1 fet 3004
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1403 FOR MICROWAVE LOW-NOISE AMPLIFIERS, N-CHANNEL SCHOTTKY BARRIER GATE TYPE D ESC R IPTIO N OUTLINE DRAWING The M GFC1403 low-noise GaAs FET w ith an N -channel Schottky gate is designed for use in S to Ku band am pli­

mgf1908

Abstract: MGF1908A MGF1303B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

MGF2415

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2415A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 1 5 A , power GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High o u tp ut power • High power gain

pc4572

Abstract: 4672G 4572g JPC4572 c4572 UPC4572
Contextual Info: BIPOLAR ANALOG INTEGRATED C IR CU IT n PC4572 LO W S U P P L Y VOLTAGE. ULTRA LO W -N O IS E .H IG H SPEED, WIDE BA N D , LO W lB DUAL OPERATIONAL A M PLIFIER FEATU R ES DESCRIPTION The jiPC 4572 is a dual w ide band, ultra lo w noise opera • tio na l am plifier designed fo r low supply voltage operation

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF2445 MICROWAVE POWER GaAs FET DESCRIPTION The M G F2445, power GaAs F E T w ith an N-channel >chottky gate, is designed fo r use in S to Ku band am pli­ fiers. FEATURES • High output power • High power gain • High power added efficiency

bc337 transistor

Abstract: transistor bc337 ATC100A2R2 ATC100a101
Contextual Info: MOTOROLA SC XSTRS/R F 1Z E D | ¿,31,725*4 Q0âfl3tfe, S | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV6080B The RF Line UHF Linear Pow er Transistor 80 W — 470 to 860 M H z UHF LIN E A R PO W ER T R A N SIS T O R . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal match­

Contextual Info: NEC THIN FILM HYBRID 1C MC-5875A/B MC-5876A/B 11.7 - 12.2 GHz LNA Modules FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN: 16 dB MIN The MC-5875A/B and MC-5876A/B are high gain, low noise amplifiers which operate from 11.7 to 12.2 GHz. The devices are two-stage amplifiers suitable for use as the 1st and 2nd