L-BAND 500 WATT AMPLIFIER Search Results

ACRIAN

Abstract: acrian inc
Contextual Info: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold

662a-20

Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
Contextual Info: LZY-2 ULTRA LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN TABLE OF CONTENTS 1.0 General Description 2.0 Electrical Performance Specifications 3.0 Mechanical Specifications 4.0 Electrical Featuress 4.1 Overdrive Protection

Contextual Info: w h ew lett WLish 'KMPA CK A RD General Purpose: Narrowband Power Amplifier and C A R S Band Preamplifiers Features AWP Series 3.7 to 11.7 GHz. • High Reliability • Energy Efficiency • FC C Type Accepted • High Channel Loading Capacity • Easy to Install

Contextual Info: Whnl H E W L E T T mUnM P a c k a r d Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description • 1 Watt Output Power • Low Current: 450 mA The CTO-565 is a high gain, high efficiency, Class A 1 Watt ampli­

1/C9000 - 60005

Abstract: B/C9000 - 60005 R/C9000 - 60005
Contextual Info: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.

Contextual Info: 3/8" SQUARE / MULTITURN / CERMET INDUSTRIAL / SEALED • Designed for operational amplifier offset voltage adjustment applications ■ Reduces power supply drift errors bo—ins ■ Unique center tapped trimming potentiometer ■ Vertical and horizontal adjust types available

Contextual Info: 3/8” SQUARE / MULTITURN / CERMET INDUSTRIAL/SEALED • Designed for operational amplifier offset voltage adjustment applications ■ Reduces power supply drift errors ■ Unique center tapped trimming potentiometer ■ Vertical and horizontal adjust types available

Contextual Info: Product Information ISO 9001 CERTIFIED TBQ-3017 Ku-Band MMIC 1/2 Watt Power Amplifier Features: 1/2 Watt Output Power at 1 dB Gain Compression 29 dB typical SSG 6 dB typical Noise Figure Thermally Efficient Copper-Tungsten Package Drop-In Integration Operating Temperature, - 40_C to + 70_C

MRF327

Contextual Info: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

GVEN

Contextual Info: Product Information ISO 9001 CERTIFIED TBQ-3018 Ku-Band MMIC 1Watt Power Amplifier Features: 1 Watt Output Power at 1 dB Gain Compression 35 dB typical SSG 7 dB typical Noise Figure Thermally Efficient Copper-Tungsten Package Drop-In Integration Operating Temperature, - 40_C to + 70_C

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

MRF327

Abstract: Johanson Piston Trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

Avantek amplifier

Abstract: AVANTEK solid state 32 UNC-2B avantek am AVANTEK awp AWP 06-7240-T
Contextual Info: General Purpose: Narrowband Power Amplifier and CARS Band Preamplifiers A W P S e ries 3 .7 to 11.7 GHz. F eatures • High R eliability • En erg y E fficie n c y • FCC T yp e A ccepted • High C h an n el Loading C apacity • Easy to Install • No M ain ten an ce R equired

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

trimmer 3296

Abstract: 1m trimpot trimmer cw 3296 trimmer 3296 code Bourns 3296 202 3296 potentiometer 100k trimmer 3386 cw Bourns 3296
Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3296-OT1 is obsolete and not recommended for new designs. • 3/8 ” Square/ Multiturn / Cermet Industrial / Sealed ■ Designed for operational amplifier offset voltage adjustment applications

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

2SC1947 equivalent

Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

TCF10B

Abstract: pilot relay TC-10B master trip relay power line carrier communication abb TC-10
Contextual Info: T y p e s 1 AStA BROWN BOVfcft! T C - 1 0 B a n c l T C F - T 0 B " Frequency programmable power line carrier 1MDB11007-EN Page 1 March 1992 Changed since August 1990 Data subject to change without notice ABB Network Control & Protection SE 90629 Features

ka2102a

Contextual Info: KA2102A LINEAR INTEGRATED CIRCUIT TV SOUND SYSTEM 14 DIP HIS The KA2102A is a silicon m onolithic integrated circuit designed for the SIF and audio section in television receivers. This IC has all functions including sound IF amplifier, FM detector, DC volume

2sc1947

Abstract: 2SC1947 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use R F power amplifiers on V H F band mobile radio applications. Dimensions in mm

200 watt schematics power amp

Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

6BT SMD

Contextual Info: S i GEC PLESSEY ADVANCE INFORMATION SEMICONDUCTORS DS3608 - 2.0 SL531 250MHz TRUE LOG IF AMPLIFIER The SL531 C is a wide band amplifier designed for use in logarithmic IF amplifiers of the true log type. The input and log output of a true log amplifier are at the same frequency i e

Contextual Info: HC1437 Q / HyComp, Inc. Fast-Settling Operational Amplifier FEATURES APPLICATIONS • • • • • • • • • • • • Clean settling Easy compensation True differential inputs ± 20 mA output FET inputs 350 MHz GBW product IDAC outputs Pulse am plifiers