L-BAND AMPLIFIER Search Results

Onetta

Abstract: onetta ioe onetta 1100 IOE1130L-11680D000
Contextual Info: IOE 1100 L-Band EDFA Series IOE 1130 L Booster Amplifier The Onetta IOE 1100 L-Band EDFA Series are high-performance intelligent L-band erbium-doped fiber amplifiers EDFAs for long-haul and ultra long-haul applications. The IOE 1130 L Booster Amplifier is part of the IOE 1100 L-Band

inline amplifier specifications

Abstract: onetta ioe "line AMPLIFIER" edfa amplifier IOE-1110L-12665D000 optical fiber DSF onetta edfa inline amplifier onetta 1100 in line amplifier fiber
Contextual Info: IOE 1100 L-Band EDFA Series IOE 1110 L In-Line Amplifier The Onetta IOE 1100 L-Band EDFA Series are high-performance intelligent L-band erbium-doped fiber amplifiers EDFAs for long-haul and ultra long-haul applications. The IOE 1110 L In-Line Amplifier is part of the IOE 1100 L-Band

datasheet ADC 8080

Abstract: ADC 8080 diode 366 nm ADC Telecommunications max1440 Optical thin film filter
Contextual Info: Compact Optical Module Band Separator: L Band Pass Filter Preliminary ADC's Band Separator: L Band Pass Filter is a two-port, compact optical module that utilizes a thin film interference filter. The band separator has low insertion loss in the pass band and

Furukawa Electric North America

Abstract: XL Photonics L-band Amplifier
Contextual Info: ERBIUM-DOPED FIBERS FOR L-BAND Specification Sheet R37105 XL Erbium-Doped Product Description OFS offers this erbium-doped fiber designed specifically for extended L-Band fiber amplifiers operating in the 1565-1620 nm region. This fiber enables 30% more bandwidth for advanced L-Band amplifier

R37102-80

Abstract: 200kpsi
Contextual Info: ERBIUM-DOPED FIBERS FOR L-BAND Specification Sheet LRL and LRL 80 Erbium-Doped Product Description LRL erbium-doped fiber reduces the fiber length required to build L-Band amplifiers. It is ideal for amplifiers for L-Band applications. Using both LRL and LSL erbiumdoped fibers in an amplifier adds flexibility

HS350

Abstract: VP215
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2131T5D L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2131T5D is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. This device realizes high gain and high output power.

edfa raman amplifier

Abstract: E2000 connector edfa amplifier E2000 JDS uniphase EDFA
Contextual Info: COMMUNICATIONS COMPONENTS Fused Coupler, Single Window, Low loss C+L Band or S Band FFCK Series Key Features • High-power handling • Wide range of regular parts readily available • Proven reliability Applications • Signal monitoring in C+L band EDFA or RAMAN amplifier

TA4001F

Contextual Info: TA4001F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4001F VHF~UHF Wide Band Amplifier Features l Band width: 2.4 GHz typ. (3dB down) l High gain: |S21|2 = 12.5dB (typ.) (f = 500 MHz) l 50 Ω Input and output impedance l Small package

2.2 GHz local oscillator ic

Abstract: 1SV210 nec vco PC2756T
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER IC FOR GPS RECEIVER AND WIRESLESS COMMNUNICATIONS DESCRIPTION µPC2756T is a silicon monolithic integrated circuit designed as L-band downconverter. This L-band downconverter IC is

B412

Abstract: B69640 BBY51 U2730B U2730B-B 1607B SSO28 B696 L-band Tuner l-band downconverter
Contextual Info: U2730B L-Band Down-Converter for DAB Receivers Description The U2730B is a monolithic integrated L-band downconverter circuit fabricated in TEMIC Semiconductors’ advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT fi PC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER 1C FOR GPS RECEIVER AND W IRESLESS COMMNUNICATIONS DESCRIPTION ¿¿PC2756T is a silicon monolithic integrated circuit designed as L-band downconverter. This L-band downconverter 1C is

TA4002F

Contextual Info: TA4002F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4002F VHF~UHF Wide Band Amplifier Features l Band width: 1.3 GHz typ. (3dB down) l High gain: |S21|2 = 23dB (typ.) (f = 500 MHz) l 50 Ω Input and output impedance l Small package Pin Assignment (top view)

GRM39CH

Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿iPG174TA L-BAND PA DRIVER AMPLIFIER DESCRIPTION The ,uPG174TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output

amplifier 950-2150 MHZ

Abstract: RF Splitter 950-2150 MHZ 950-2150 MHZ receiver 2990PRO F connector Splitter 2990P
Contextual Info: L-Band F Force Model 2990PRO Optical Broadcast Systems DBS L-Band Transport Model 2990 transports the full L-Band spectrum 950-2200 MHz as a standard feature. LNB power uses current limiting technology. The unit resets itself, eliminating down time due to blown fuses.

Contextual Info: Ku-BAND TRANSCEIVER 300W TO 400 W L-BAND INTERFACE AWMT-6000KL-G series GaN Technology Features • Operating Ku-Band Tx: 14.00 - 14.50 GHz 13.75 - 14.50 GHz optional Rx: 10.95 - 12.75 GHz (sub-bands) L band Tx and Rx interface Easy to install and operate

grm39ck1r5c50

Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

dab RECEIVER

Abstract: 1607B B412 B69640 BBY51 L100 U2735B-B dab circuitry U2735BB
Contextual Info: U2735B-B L-Band Down-Converter for a DAB Receiver Description The U2735B-B is a monolithic integrated L-band downconverter circuit fabricated with TEMIC’s advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device includes

Siemens matsushita capacitor

Abstract: dab RECEIVER U2735B-B B412 B69640 BBY51 L100 B696
Contextual Info: U2735B-B L-Band Down-Converter for a DAB Receiver Description The U2735B-B is a monolithic integrated L-band downconverter circuit fabricated with TEMIC’s advanced UHF5S technology. It covers all functions of an L-band down-converter in a DAB receiver. The device includes

TFL08

Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

cd 6283 cs

Abstract: cd 6283 Power amplifier I2125 cd 7368 ZO 103 MA 75 623 KGF1254 KGF1254B CI 7408 D0227
Contextual Info: O K I electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies G EN ER A L DESCRIPTIO N The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The

TA4012FU

Contextual Info: TA4012FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications Features l Low current: ICC = 6.5 mA l Wide band: f = 2.0 GHz 3dB down l Operatin supply voltage: VCC = 1.5~2.2 V Pin Assignment Maximum Ratings (Ta = 25°C)

TA4011FU

Contextual Info: TA4011FU TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011FU UHF Wide Band Amplifier Applications Features l Low current: ICC = 3.5 mA l Wide band: f = 2.4 GHz 3dB down l Operatin supply voltage: VCC = 1.5~3 V Pin Assignment Maximum Ratings (Ta = 25°C)

TA4000F

Contextual Info: TA4000F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4000F VHF~UHF Wide Band Amplifier Applications Features l Band width : 700 MHz min @3dB down l Low noise: 4dB (typ.) @f = 400 MHz l Small package Pin Assignment (top view) Marking Weight: 0.014 g (typ.)