L. S. TECH Search Results

Contextual Info: APPROVER L L I-1 L I- 1 |— - i- r - I I-1 |— I "1 — I- 1= o -J* Technic a l Data: J Ma terial: • C o n t a c t l m e t a l housi ng : B r a s s • W ir e gu ard : S t a i n l e s s s t e e l • S u r f a c e o f s o l d e r tail: tin p late d

Thin-Film Technologies

Abstract: 0402 Thin Film Technologies TL MIM atceramics
Contextual Info: T L MIM TR AN S M I S S I ON L I NE M E TA L I NS U L ATO R -M E TA L CA PACITOR T L MIM TR AN S M I S S I ON L I NE M E TA L I NS U L ATE R -M E TA L CA PACITOR ATC // AVX TL MIM Transmission Line Metal-Insulator-Metal Capacitor ATC / /AVX Thin Film Technologies is pleased to introduce

Contextual Info: Technical Information Proper ty Units Mechani cal Pr oper t i es Te n s i l e s t r e n g t h @ y i e l d Te n s i l e e l o n g a t i o n @ b r e a k Te n s i l e mo d u l u s F l ex u r a l m o d u l u s F l ex u r a l S t r e n g t h I zo n i mp a c t 1 / 8 " - n o t c h e d

Contextual Info: D a t a S h e e t • Te r m i n a l Disconnect Terminals w i t h Te n s i o n C l a m p Technology ZTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y

Contextual Info: D a t a S h e e t • Te r m i n a l Disconnect Terminals w i t h Te n s i o n C l a m p Technology ZTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y

IRF P CHANNEL MOSFET

Contextual Info: PD - 96127 IRF7404QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free A D S 1 8 S 2 7 D S

Contextual Info: motorola SC -CDIODES/OPTOT 1SE D | L 3 L 7 2 S S o c ^ a S L . 7 | - - J - i h c 7 MOTOROLA 1N4099 thru 1N4135 1N4614 thru 1N4627 S E M IC O N D U C T O R TECHNICAL DATA SILICON ZENER DIODES L O W -L E V E L S IL IC O N P A S S IV A T E D Z E N E R D IO D E S

C086

Abstract: f 0472 N-Channel MOSFET
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h ­

Contextual Info: PD - 95017B IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D

Contextual Info: PD - 95017C IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D

Contextual Info: PD -96259 IRF7406GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free S S S G A D 1 8 2 7 D 3 6 D 4 5

Contextual Info: ö -H co io co nnnnnnnnnnnnnnn_ S l § l s ) l § l s ) S l s ) S l s ) S ) l § l s ) l § l s ) ' REV ECN NO. A NEW DESIGN APP. DATE ro Ö -H O D D I Q I D I Q I Q I Q I Q I Q I D D I Q I D I Q I ' p o> SPECIFICATION ORDER INFORMATION * Current Rating:

EIA-541

Contextual Info: PD - 96081A IRF7413UPbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D

Contextual Info: PD - 95017C IRF7413PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 100% RG Tested Lead-Free A A D S 1 8 S 2 7 D S 3 6 D

IRF7101

Abstract: EIA-541 F7101
Contextual Info: PD - 95724 IRF7401PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET A A D 1 8 S 2 7 S 3 6 4 5 S G VDSS = 20V D D D

Contextual Info: PD - 95724 IRF7401PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET A A D 1 8 S 2 7 S 3 6 4 5 S G VDSS = 20V D D D

Contextual Info: PD - 95137A IRF7416PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -30V

Contextual Info: PD - 95137A IRF7416PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = -30V

bf170

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B F 170 Advance Inform ation S m all-S ig n al Field E ffe c t T ra n sis to r N -Channel Enhancem ent-M ode S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n = 5 O H M S 60 V O L T S

Contextual Info: TECHN I CAL SHELL " D " : St ee I . f i n i s h : t i nned DATA SUBMINIATURE CONNECTORS BODY : G l a s s f i l l e d t h e r m o p l a s t i c . Fl ame r e t a r d a n t t o UL 94 V - 0 C o l o u r : b I ack . . CONTACTS : M a t e r i a l f o r s o c k e t s : b r a s s

marking g20

Contextual Info: D a t a S h e e t • Te r m i n a l Disconnect Terminals with Screw Clamping Yoke Connection Technology WTR NEW D i s c o n n e c t t e s t t e r m i n a l s a re s p e c i a l l y d e s i g n e d f o r t e s t a n d m e a s u re m e n t t a s k s . E l e c t r i c a l c i rc u i t s c a n b e s p e c i f i c a l l y d i s c o n n e c t e d f ro m t h e s u p p l y b y

Contextual Info: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = 30V

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D

EIA-541

Abstract: IRF7101
Contextual Info: PD - 95301 IRF7403PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V