L1 SOT143 Search Results

sy10s897jc

Abstract: cmos tsmc 0.18 A103267 0.18 tsmc BCD sy10s897 MIC29300BU BGA289 Unisem MIC2287 SPN860003
Contextual Info: EXTENDED TEMPERATURE CYCLE Ta Delta = -65C to +150C MSL Pkg Lds Device D/C Process Qty Cyc. L3 BGA 289 KS8695PX 0421A L3 BGA 289 KS8695PX 0407 L1 L1 P.DIP P.DIP 24 40 MIC59P50 MIC10937P L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2 L2

transistor p2w

Contextual Info: 06011 Only One Name Means ProTek’Tion SOT-143 PACKAGE OUTLINE & DIMENSIONS PACKAGE OUTLINE SOT-143 A G L PACKAGE DIMENSIONS J S B MILLIMETERS MIN MAX DIM L1 A B C D F G H J K L L1 R S K D F H C R MOUNTING PAD X Yx3 m n 1.2 x 0.9 0.85 x 0.85 2.0 1.9 m

TO253

Abstract: transistor k 790 PLCC-20
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

TO253

Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

527AF

Abstract: to253 to-253 sot143-4
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−143, 4 Lead CASE 527AF−01 ISSUE A DATE 24 MAR 2009 SYMBOL MIN A 0.80 1.22 D A1 0.05 0.15 e A2 0.75 b 0.30 0.50 b2 0.76 0.89 4 3 E1 1 E c 0.08 D 2.80 E 2.10 E1 1.20 e 2 0.40 L1 0.20 2.90 2.64 1.30 0.50 0°

Field-Effect Transistors

Abstract: SOT54variant diodes PACKAGE
Contextual Info: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

MLC850

Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
Contextual Info: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency

Contextual Info: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature

GCDA15C

Contextual Info: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour

GCDA15C-1

Abstract: GCDA15C-1-GS08
Contextual Info: GCDA15C-1 Vishay Semiconductors Low Capacitance Bidirectional ESD Protection Diode in SOT143 3D Top View Pinning-Schematic Features • 1-line ESD protection silicon diode • ESD Immunity ± 30 kV e3 acc. IEC 61000-4-2 • Very low capacitance < 2 pF • Bidirectional, Symmetrical clamping behaviour

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

TRANSISTOR L2

Abstract: transistor bf 194 E C B
Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

transistor l2

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

SY68730ZC

Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Contextual Info: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18

smd transistor fq 30

Abstract: BFG17A TRANSISTOR 610 smd
Contextual Info: Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   

PowerDI5060-8L

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

do-201 package

Abstract: DFN2020-3 SOD 523 0.85-1.25 DP SOT523 DFN1006-3 dfn3030-8 DFN1006-2 DFN1006H4-2 GBJ 1005 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   

.H2 sot89

Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

SOT-95

Abstract: TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006-3 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6
Contextual Info: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E

transistor l2

Abstract: transistor bf 194
Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   