L2SA812RLT3G Search Results
L2SA812RLT3G Datasheets Context Search
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION |
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L2SA812QLT1G L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G |
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L2SA812 L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G | |
L2SA812QLT1G
Abstract: L2SA812RLT1G L2SA812SLT1G
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L2SA812QLT1G L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G L2SA812RLT1G L2SA812SLT1G | |
L2SA812SLT1GContextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series S-L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. |
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L2SA812QLT1G S-L2SA812QLT1G L2SC1623 AEC-Q101 L2SA812QLT1G S-L2SA812QLT1G 3000/Tape L2SA812QLT3G S-L2SA812QLT3G 10000/Tape L2SA812SLT1G | |
L2SA812RLT1GContextual Info: LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 3 ƽ We declare that the material of product compliance with RoHS requirements. |
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L2SA812QLT1G S-L2SA812QLT1G L2SC1623 AEC-Q101 3000/Tape 10000/Tape L2SA812QLT1G L2SA812RLT1G |