L30 DIODE PART MARKING Search Results

Contextual Info: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. GPS2 click 2 1 3 4. Essential features 1. Introduction

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

Contextual Info: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj

CM1230-02

Abstract: CM1230 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP
Contextual Info: PRELIMINARY CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with

CM1230-02

Abstract: CM1230-08CP CM1230-04 xtal 32.768 CM1230 CM1230-08 L30 diode part marking micro b usb
Contextual Info: CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with

Contextual Info: FERD60M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB this device is intended to

Contextual Info: FERD60U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 Packaged in TO-220AB, this device is intended to be used in switch mode power supplies, or

Contextual Info: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

L30 diode part marking

Abstract: l128dn l128dn transistor L128D
Contextual Info: STL128DN High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Large RBSOA ■ Integrated antiparallel collector-emitter diode

TR136D

Contextual Info: TR136D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode

Contextual Info: TR236D High voltage fast-switching NPN power transistor Preliminary Data Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

Contextual Info: FERD40U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB, and D2PAK, this device is intended to be used in switch mode power

Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material

11213

Abstract: STPS30120CT
Contextual Info: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high

Contextual Info: STPS30120C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop A2 K K A1 Description Dual center tap Schottky rectifier suited for high

STPS40120

Contextual Info: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high

Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

PS40M120CT

Abstract: STPS40M120CR
Contextual Info: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS40120C Power Schottky rectifier Features • A1 High junction temperature capability K A2 ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop K K Description A1 Dual center tap Schottky rectifier suited for high

PS40SM120CTN

Abstract: STPS40SM120CR
Contextual Info: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency

Contextual Info: STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adapters and on-board DC/DC converters. A1 K A2 The product is packaged in TO-220AB,