L30 DUAL DIODE Search Results

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

Contextual Info: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj

l30 diode smd

Abstract: zy Marking code sot23 MARKING SOT23 .DG diode NXP marking code N1 SOT23 NXP power dissipation TO-236AB l30 sot23-4 smd diode marking YD N1 MARKING CODE SOT23 smd diode L30 smd diode marking L30
Contextual Info: BAV23 series Dual high-voltage switching diodes 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1] Package Configuration

DIODE smd marking A7p

Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Contextual Info: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur­

smd diode marking A7 SOT-23

Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Contextual Info: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad

Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode

PF48F

Abstract: 28F128L30 28F256L30 28F640L30 RD48F4000L0ZTQ0 vf bga
Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

Contextual Info: STTH1002C High efficiency ultrafast diode Datasheet - production data Features A1 • Suited for SMPS K A2  Low losses  Low forward and reverse recovery times  Insulated package: TO-220FPAB  High junction temperature  Low leakage current A2

BAV23

Abstract: BAV23S smd marking Yd BAV23 diode
Contextual Info: BAV23 series Dual high-voltage switching diodes Rev. 06 — 3 March 2008 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview

F600M

Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Contextual Info: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23

Contextual Info: Wha% HEW LETT* WlltM PA CKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

hsmp-3800

Abstract: marking 550 SOT143
Contextual Info: warn HEWLETT mHEM PA CK A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

numonyx intel

Abstract: 28F128L30 28F256L30 RD48F4000L0ZBQ0 RD48F4000L0ZTQ0 PF48F3000 4400p0 Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L30 28F128L30, 28F256L30 Datasheet Product Features „ „ „ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

251903

Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase ■ Software — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode

F0027

Contextual Info: ¥hp% LETT mXM HP AEW CKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • D iodes O ptim ized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Merowave Frequency Operation • Surface M ount SOT-23 and

Contextual Info: Whol H EW LET T mL'fiM P A C K A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23

Contextual Info: FERD60U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 Packaged in TO-220AB, this device is intended to be used in switch mode power supplies, or

MFW SOT23

Abstract: Diode marking MFW Diode sot23 marking MFW L31 diode sot-23 sot23 marking MFW MFW SOT23 MARKING schottky diode marking A7 diode T31 Marking HSMS 2821 SOT-23 MARKING T31
Contextual Info: Wfw\ mLUMHP AECWKLAERTDT Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface Mount SOT-23/ SOT-143 Package • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Low FIT (Failure in Time) Rate* • Six-sigma Quality Level

72T MARKING CODE

Abstract: MARKING MON sot-23 sot-23 MARKING CODE G1 43t SOT23 72t sot-23 sot-23 72t marking 43T mon marking sot-23
Contextual Info: Thnl mL'/ÏM HP AECWKLAERTDT Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23

PIN diode HSMP 389X SPICE model

Abstract: HSMP-3800 HSMP4810 HSMP-3820 L2 SOT23 HSMP-3810 Microwave PIN diode spice HSMP-381X HSMP-382X HSMP-3880
Contextual Info: Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and SOT-143 Packages

hsmp-3800

Abstract: HSMP-380X hsms-3860 HSMP-38xx HSMP-4820 SOT-23 marking l31 HSMS-38
Contextual Info: Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and SOT-143 Packages

k2225 transistor

Abstract: k1118 k1117 k1213 power transistor k1821 transistor k1213 k1117 transistor K2225 k1518 transistor k1117
Contextual Info: AN1560/D Low Voltage ECLinPS and ECLinPS Lite SPICE Modeling Kit 150Prepared by Senad Lomigora and Paul Shockman ON Semiconductor Broadband Application Engineers http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to extend the information given

Contextual Info: FERD40U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB, and D2PAK, this device is intended to be used in switch mode power

Contextual Info: FERD40M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 K Packaged in TO-220AB, and D2PAK, this device is intended to be used in switch mode power