L4* LOW NOISE Search Results

SJPB-L4

Abstract: sanken power transistor
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-L4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-L4 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters

philips 3f3 ferrite

Abstract: AN890 variac used as a battery charger
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

philips 3f3 ferrite

Abstract: AN890 transistor KT 816 dz 300 AN-890
Contextual Info: r ^ z j S G S -T H O M S O N 7 M« L4 9 9 0 Rffl[] g[^(Q [l[L[Igir[K]M D(gi L4 9 9 0 A PRIMARY CONTROLLER • ■ ■ ■ ■ ■ ■ . ■ . ■ ■ . ■ CURRENTT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1 MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE

BFU309

Contextual Info: titiS3 T31 □□E3 b f l4 H 7 P hilips Sem iconductors APX Prelim inary specification N-channel silicon field-effect transistors , BFU308/309/310 N Af1 FP PHTI TPS/DTSCRETE L71 FEATURES PIN CONFIGURATION • Low noise • Interchangeability of drain and source connections

S3C marking

Contextual Info: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.

L4949E

Abstract: S020L switching preregulator L4949ED L4949EP HY 915
Contextual Info: /= 7 ^ 7 #. SGS-THOM SON R!ilD»li[yiOT SWlD g L4 9 4 9 E MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR PRODUCT PREVIEW • OPERATING DC SUPPLY VOLTAGE RANGE 5V - 28V ■ TRANSIENT SUPPLY VOLTAGE UP TO 40V ■ EXTREMELY LOW QUIESCENT CURRENT IN STANDBY MODE

ATF-25100

Abstract: ATF25100-GP3 AT-8251 at8251
Contextual Info: HEW LETT-PACKARD/ C MP NT S b lE H EW LETT PACKARD m D • l 4 l4 7 S f l 4 ODCmSB 723 ATF-25100 (AT-8251 0.5-10 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • Low Noise Figure: 0.8 dB typical at 4 GHz High Associated Gain: 14.0 dB typical at 4 GHz

Contextual Info: www.fairchildsemi.com M L4 8 2 4 Pow e r Fa c t or Corre c t ion a nd PWM Cont rolle r Com bo Features General Description • Internally synchronized PFC and PWM in one IC • Low total harmonic distortion • Reduces ripple current in the storage capacitor between

8 pin ic chip 5270

Contextual Info: July 1994 PRELIMINARY Micro Linear M L4 6 1 0 R , M L 4 6 1 1 R 5V, 2-, 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML461 OR/4611R is a bipolar monolithic read/write circuit designed for use with two-terminal thin-film recording heads. They provide a low noise read amplifier,

Contextual Info: H a rris D G 411, D G 412 C l4 1 3 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches August 1993 Features Description ON-Resistance < 35i2 Max • Low Power Consumption PD < 35^W • Fast Switching Action • toN <175ns • tgpp<145ns

LF347

Abstract: LF347B LM348 ULN 8 DIP T79 LOW NOISE AMP 100n18
Contextual Info: TEXAS I N S T R 1ÖE D LIN /IN T FC ö li t i l 7 H 4 GQ77374 T LF347, LF347B WIDE-BANDWIDTH QUAD JFET-INPUT OPERATIONAL AMPLIFIERS D2997, M A R C H 1987 D. J, OR N PACKAGE (TOP VIEW) (o Low Input Noise Current Typically 0 .0 1 pA/VHz L 1 V J l4 U O U T )

HP5082-2835

Abstract: HP50822835 hp5082 B1B11 step 7 micro win MP7685KD ic cmos 4090 MP7685 mpop02
Contextual Info: M EOE b O ci 7 4 l4 4 D MICRO POWER SYSTEMS S CMOS 11-Bit Monolithic A/D Flash Converter M IC R O POWER SYSTEMS FEATURES • • • • 0DG3SbS MP7685 IN C PIN CONFIGURATION 11-BIT RESOLUTION 1 MHz Sampling Rate Single Supply Voltage 3 to 6.5V Low Power CMOS (100 mW max.)

74HL33953D

Abstract: 74HL33953DB
Contextual Info: N A P C /P H ILIP S S E niC O N » b3E D • b t i S 3 cì B l4 G 0 f l M D b 3 Philips Semiconductors T3T Objective Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • DESCRIPTION The 74HL33953 is a high-performance, low-power,

Contextual Info: LF347, LF347B WIDE BANDWIDTH QUAD JFE T INPUT OPERATIONAL AMPLIFIERS D 2 9 9 7 , M AR CH 198 7 Low Input Bias Current Typically 50 p A D, J. OR N P A C K A G E T O P V IE W Typically 0.01 pA/Vfiz (outC 1 U l4 Dout) <IN- C 2 13 □ i n - S A M P #1 (lN + C 3

Contextual Info: July 1 996 P R E LIM IN AR Y MgL Micro Linear ML4751 Adjustable Output Low Current Boost Regulator G EN ERA L D ESCRIPTIO N FEATURES The M L4 7 5 1 is a lo w p o w e r boost re g u la to r designed fo r D C to D C co n ve rsio n in 1 to 3 ce ll battery p o w e re d

NJG1130KA1

Abstract: HK1005 Power AMP P1dB 35dBm
Contextual Info: NJG1130KA1 GPS LOW NOISE AMPLIFIER GaAs MMIC ! GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GPS application at the 1.575GHz. The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated

Contextual Info: NJG1130KA1 GNSS LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GNSS Global Navigation Satellite Systems . The LNA offers excellent low noise figure, high linearity and low current consumption.

njg1130ka1

Contextual Info: NJG1130KA1 GPS LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1130KA1 is a low noise amplifier GaAs MMIC designed for GPS application at the 1.575GHz. The LNA offers excellent low noise figure, high linearity and low current consumption. Two stage amplifier and ESD protection circuit are integrated

Contextual Info: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

MML20242H

Abstract: RO4350B Rogers RO4350B microstrip
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

3802A

Abstract: mn3801 mn3106 N8033 MN3801S 8028A N3801 N3858 N3802 mn8040
Contextual Info: MOS LSIs • CCD Delay Line Series 1 Category Type No. Clock System Stages Frequency Signal Area ( —3dB) COM Depth Quasi­ single power supply 5V, (6V) Supply voltage N M s 5V Supply voltage 12V Quasi­ single power supply 5V. (9V) Low EMI Low clock noise

MH88210

Abstract: A46 1336 P1N50 c2328
Contextual Info: •V II I E L . Hybrid DTMF Receiver System Features • • • • • • • • Up to 40dB Dynamic Range Single Power Supply No External Components Needed Direct Connection To Telephone Line Exceptional Talk Off 14dB Signal to Noise Ratio A cquisition Time Adjustable Down to 10ms

LL1608-F2N7S

Abstract: ATF34143 ATF-34143 601706 atf 36163 Low Noise Amplifier fet amplifier schematic schematic diagram DC amplifier 0805CS ATF-35143 ATF-36163
Contextual Info: High Intercept Low Noise Amplifiers for 1500 MHz through 2500 MHz using the ATF-34143 Low Noise PHEMT Application Note 1175 Introduction Biasing Options and Source Grounding Agilent Technologies’ ATF-34143 is a low noise PHEMT designed for use in low cost commercial applications in