L4F MARKING Search Results

Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1

Abstract: MBR140SFT3 SOD-123LF
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SF

Abstract: L4f marking marking L4F
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1G

Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

NRVB140SF

Contextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR140SFT1

Abstract: MBR140SFT3
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1G

Abstract: MBR140SFT1 MBR140SFT3 MBR140SFT3G Diode SOd-123 marking cu
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

marking code g1s

Abstract: marking code g2s Hitachi DSA00164 diode g1s
Contextual Info: BB201M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-713A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;

sot143 marking code G2

Abstract: Hitachi DSA001652
Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

marking L4F

Abstract: Hitachi DSA001652
Contextual Info: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

Hitachi DSA0096

Abstract: 1SV70 BIC801M marking code g2s
Contextual Info: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

Hitachi DSA0096

Abstract: 1SV70 BIC701M
Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

Hitachi DSA00164

Contextual Info: BB202M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-714A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

Hitachi DSA002743

Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

Hitachi DSA0096

Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

14164 1994

Abstract: en 10204 3.2 UNS31254 DN100 steam pipe DN40 PN16 en 10204 3.1 pitot sensor 10204 3.1b material certificate ISO5167 A193-B7
Contextual Info: Data sheet DS/TORBAR-EN Rev. D Torbar Averaging pitot tubes Economical flow metering solutions for gases, liquids and steam Unique profile shape — Ooffers high flow turndown No drift in co-efficient — Ensures long term stability One-piece outer tube — For pipes up to 5000 mm 197 in. diameter

xapx2

Abstract: canton AS 65 SC service manual canton AS 50 SC service manual 7AM038 canton AS 105 SC service manual YS11A105B-026 - YS11
Contextual Info: Introduction to Thermtrol Table of Contents www.thermtrol.com E-mail: sales@thermtrol.com Motor Protectors: SH7AM - Self hold motor, transformer, appliance protection 7AM - Motor, lighting, transformer, appliance protection SX8AM - High locked rotor current self hold motor protection

Contextual Info: DM383 www.ti.com SPRS870B – APRIL 2013 – REVISED DECEMBER 2013 DM383 DaVinci Digital Media Processor Check for Samples: DM383 1 High-Performance System-on-Chip SoC 1.1 Features 123 • High-Performance DaVinci Digital Media Processors – Up to 1000-MHz ARM Cortex™-A8 RISC

Contextual Info: DM383 www.ti.com SPRS870A – APRIL 2013 – REVISED OCTOBER 2013 DM383 DaVinci Digital Media Processor Check for Samples: DM383 1 High-Performance System-on-Chip SoC 1.1 Features 123 • High-Performance DaVinci Digital Media Processors – Up to 1000-MHz ARM Cortex™-A8 RISC

Contextual Info: DMVA3, DMVA4 www.ti.com SPRS872B – MAY 2013 – REVISED DECEMBER 2013 DMVA3 and DMVA4 DaVinci Digital Media Processor Check for Samples: DMVA3 1 High-Performance System-on-Chip SoC 1.1 Features 1234 • High-Performance DaVinci Digital Media Processors

Contextual Info: DM385, DM388 www.ti.com SPRS821D – MARCH 2013 – REVISED DECEMBER 2013 DM385 and DM388 DaVinci Digital Media Processor Check for Samples: DM385, DM388 1 High-Performance System-on-Chip SoC 1.1 Features 1234 • High-Performance DaVinci Digital Media