SST511
Abstract: SST506 SST5114 Diode SOT-23 marking L5 SST502 SST503 SST504 SST505 SST507 SST508
Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7
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SST502
SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
SST511
SST506
SST5114
Diode SOT-23 marking L5
SST503
SST504
SST505
SST507
SST508
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SST502
Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7
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SST502
SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
SST5114
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
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A773
Abstract: A773* Transistor Q62702-A773 Q62702-A772 a772 A773 5 pin sot-23 diode l8 Q62702-A731 sot-23 diode L9 A731
Text: Silicon PIN Diodes BAR 14-1 … BAR 16-1 ● RF switch ● RF attenuator for frequencies above 10 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772 BAR 15-1
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
A773
A773* Transistor
Q62702-A773
Q62702-A772
a772
A773 5 pin
sot-23 diode l8
Q62702-A731
sot-23 diode L9
A731
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Untitled
Abstract: No abstract text available
Text: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS
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20090618a
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DIODE G7
Abstract: VVZB 120-16 io2
Text: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 M1 I1 E1 W1 L7 G7 C7 O10 W10 Conditions
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20090618a
DIODE G7
VVZB 120-16 io2
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Untitled
Abstract: No abstract text available
Text: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 W10 Tcase= 80°C, sinusoidal 120°
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20090618a
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BC518
Abstract: acer battery pinout ATI RAGE mobility m1 acer 15.6 pinout BC505 R2501a BC466 rdn27 asus BC370
Text: CLK GEN. ICS9248-61 Acer B-NOTE CPU COPPERMINE PAGE:3 V1.5 PCB LAYER TOP L1 : SIGNAL1 L2 : SIGNAL2 L3 : GND L4 : SIGNAL3 L5 : SIGNAL4 L6 : VCC L7 : SIGNAL5 L8 : SIGNAL6 BOTTOM PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 HOST BUS PAGE:3 MEM BUS DIMM*2
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ICS9248-61
ICS9112-17
440BX
MAX1627
MAX1711
ES1946
BC241
BC510
BC511
BC436
BC518
acer battery pinout
ATI RAGE mobility m1
acer 15.6 pinout
BC505
R2501a
BC466
rdn27
asus
BC370
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VVZB120-16IOX
Abstract: No abstract text available
Text: VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 120 A I C25 IFSM = 155 A = 700 A VCE sat = 1.9 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part name VVZB120-16ioX O1 S1 D E1 I1 M1 W1 L7 G7
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VVZB120-16ioX
60747and
20111115b
VVZB120-16IOX
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5mm RGB led 4 pin
Abstract: LT3595 IC Generator to 2MHz square SW11 LED television 0.47uF
Text: L DESIGN FEATURES 16-Channel LED Driver Drives up to 160 White LEDs with 5000:1 PWM Dimming by Keith Szolusha Introduction 0.47µF SW4 L4 L5 SW5 L6 SW6 SW7 L7 0.47µF L13 L12 SW12 L11 SW11 VIN SW10 L10 0.47µF 0.47µF 0.47µF 0.47µF SW8 L8 PWM9 PWM10 PWM11
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16-Channel
PWM10
PWM11
PWM12
PWM13
PWM14
PWM15
PWM16
LT3595
20mode
5mm RGB led 4 pin
IC Generator to 2MHz square
SW11
LED television
0.47uF
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yaskawa ERF150WJ
Abstract: ERF 2030 45 KW 3-phase motor weight ERF-150WJ ERF150WJ
Text: Y203-EN2-02-Katalog.book Seite 289 Mittwoch, 24. Mai 2006 2:22 14 CIMR-L7Z Varispeed L7 Made to drive lifts • • • • • • • • • • • • • • • • • One model to control AC and PM motors. Silent operation with no current de-rating.
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Y203-EN2-02-Katalog
EN81-1
I22E-EN-02
yaskawa ERF150WJ
ERF 2030
45 KW 3-phase motor weight
ERF-150WJ
ERF150WJ
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Untitled
Abstract: No abstract text available
Text: D N EW ESI G FO R DED 566 N E L7 OMM SData EE ESheet RE C T O N Integrated Adjustable 6 Amp Synchronous Switcher EL7556D NS March 24, 2003 Features • Improved temperature and voltage ranges The EL7556D is an adjustable synchronous DC:DC switching regulator optimized for a 5V input
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EL7556D
FN7339
EL7556D
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L7B15
Abstract: L7B150 L7B10 L7B11 L7B12 L7B13 L7B16 L7B18 L7B20 L7B22
Text: L7 Series 1.5 KW Voltage Limiting Diodes A range of high power zener and avalanche surge suppressor diodes available to BS 9305-F-080 in a hermetically sealed D 04 glass package in both unipolar and bipolar configurations. ; 1mS expo
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9305-F-080
S010A
5x10-9S
L7B15
L7B150
L7B10
L7B11
L7B12
L7B13
L7B16
L7B18
L7B20
L7B22
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch • RF attenuator for frequencies above 10 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772
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Q62702-A772
OT-23
EHA07005
Q62702-A731
EHAQ7004
Q62702-A773
EHA07M6
fl235b05
0235bQ5
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L79L00
Abstract: L79L05ABU L79L05C L79L05CD
Text: L7 9 L00 S E R IE S NEGATIVE VOLTAGE REGULATORS . OUTPUT CURRENT UP TO 100 mA - OUTPUT VOLTAGES OF-5; -6; -8; -9; -12; -15V - THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . NO EXTERNAL COMPONENTS ARE REQUIRED . AVAILABLE IN EITHER± 5% AC OR ± 10%
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L79L00
L79L00
L79L05ABU
L79L05C
L79L05CD
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BYV20
Abstract: BYV20-40 byv20 f BYV20-35 F483 BYV20-40A BYV20-30 BYV20-30M M002-6 BYv20#
Text: N AMER PHILIPS/DISCRETE □ LE D ^53^31 DOllSbl b BYV20 SERIES ~T-03-l7 ' SCHOTTKY- BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in D O -4 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. T h e y are
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BYV20
T-03-l7
BYV20-40A,
BYV20â
bbS3T31
M1246
T-03-17
M80-1070/7
BYV20-40
byv20 f
BYV20-35
F483
BYV20-40A
BYV20-30
BYV20-30M
M002-6
BYv20#
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L79l05
Abstract: L79L00 L79L05ABU L79L05C L79L05CD L79L09
Text: L7 9 L00 S E R IE S NEGATIVE VOLTAGE REGULATORS . OUTPUT CURRENT UP TO 100 mA - OUTPUT VOLTAGES OF-5; -6; -8; -9; -12; -15V - THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . NO EXTERNAL COMPONENTS ARE REQUIRED . AVAILABLE IN EITHER± 5% AC OR ± 10%
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L79L00
L79l05
L79L05ABU
L79L05C
L79L05CD
L79L09
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BAT15-090D
Abstract: tuner ku band BAT14-110D BAT15-110D bat14-110s
Text: Microwave, RF & Tuner Diodes L7^<*3- 0 ¡ For complete package outlines, refer to pages PO-1 through PO-6 Beam Lead Medium Barrier Type Frequency Band GHz BAT14-020 S BAT14-020 D BAT14-020 R BAT14-050 S BAT14-050 D BAT 14-050 R BAT14-090 S BAT 14-090 D BAT14-090 R
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DD45431
BAT14-020
BAT14-050
BAT15-090
BAT15-110
BAT15-110D
BAT15-090D
tuner ku band
BAT14-110D
BAT15-110D
bat14-110s
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Untitled
Abstract: No abstract text available
Text: SIEM EN S Silicon PIN Diodes BAR 14-1 . BAR 16-1 • R F switch • R F attenuator for frequencies above 10 M H z • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel B AR 14-1 L7 Q 6 2 70 2 -A 7 7 2
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EHA07005
2702-A
EHA07004
EHA07006
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24N50S
Abstract: smd JH IXFH24N50S D2528
Text: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC
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IXFH24N50S
175bC
O-247
24N50S
24N50
D94010DE,
Mbflb22b
smd JH
D2528
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Untitled
Abstract: No abstract text available
Text: blE D Bi bSHTÖST OGlMbbO TT1 • PI I T 5 MITSUBISHI LASER DIODES ML7XX5 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION SYSTEMS TYPE NAME DESCRIPTION FEATURES M L7 X X 5 series are DFB (D is trib u te d Feedback) laser diodes e m ittin g lig h t beam a ro u n d
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1310nm
65dBc
70dBc
550MHz.
b24TfiST
DD14bbl
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RFP15N12
Abstract: RFP15N15 92CS-39526 RFM15N12 RFM15N15 TA9230 92CS-34019
Text: 01 3 8 75 0 8 1 G E SOLID De 3 f l7 50 ûl STATE Standard Pow er M O S F E T s 0 1E GD1Û173 18173 7 Di T ~ 3 ? - l RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m b e r 1443 N-Channel Enhancement-Mode
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RFM15N12,
RFM15N15,
RFP15N12,
RFP15N15
RFM15N12
RFM15N15
RFP15N12
RFP15N15*
92CS-34923
92CS-34824
RFP15N15
92CS-39526
TA9230
92CS-34019
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ISOPAC0112
Abstract: Applications Note U-96
Text: □7 8139139 i / 0 « » Ë ^ | û l3 J 1 3 .T t P SEMTECH CORP 07E 01893 ' D T^C>3-l7 SET010219 MINISTUD HIGH CURRENT ISOLATED RECTIFIER A SSE M B L Y IPSolî, SET010211 HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER STUD « Low thermal impedance
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SET010219
SET010211
1042UNF
ISOPAC0112
Applications Note U-96
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1SS240
Abstract: ss240 vr-1M ST-40 09345 ST40 diode
Text: TOSHIBA {DISCRETE/OPTO} 9097250 L7 ¿ F | SOTTESO □ D D ci34S O | T O S H I B A . D I S C R E T E /OPTO 1SS240 67C 09345 -r-os-o J S Silicon E p ita xial-P la n a r Type- - Diode ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm FEATURES: . Low Forward Voltage
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DDci34S
1SS240
1SS240
ss240
vr-1M
ST-40
09345
ST40 diode
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PBYR740F
Abstract: No abstract text available
Text: PBYR735F PBYR740F PBYR745F NA M E RP H I L I P S / D I S C R E T E 25E D D ^ 53=131 0022=133 7 • \T-03-l7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes
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PBYR735F
PBYR740F
PBYR745F
\T-03-l7
OT-186
PBYR740F
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