L7 DIODE Search Results

SST511

Abstract: SST506 SST5114 Diode SOT-23 marking L5 SST502 SST503 SST504 SST505 SST507 SST508
Contextual Info: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7

L7B15

Abstract: L7B150 L7B10 L7B11 L7B12 L7B13 L7B16 L7B18 L7B20 L7B22
Contextual Info: L7 Series 1.5 KW Voltage Limiting Diodes A range of high power zener and avalanche surge suppressor diodes available to BS 9305-F-080 in a hermetically sealed D 04 glass package in both unipolar and bipolar configurations. ; 1mS expo

SST502

Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
Contextual Info: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7

Contextual Info: SIEMENS Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch • RF attenuator for frequencies above 10 MHz • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772

A773

Abstract: A773* Transistor Q62702-A773 Q62702-A772 a772 A773 5 pin sot-23 diode l8 Q62702-A731 sot-23 diode L9 A731
Contextual Info: Silicon PIN Diodes BAR 14-1 … BAR 16-1 ● RF switch ● RF attenuator for frequencies above 10 MHz ● Low distortion factor ● Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel BAR 14-1 L7 Q62702-A772 BAR 15-1

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS

DIODE G7

Abstract: VVZB 120-16 io2
Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 M1 I1 E1 W1 L7 G7 C7 O10 W10 Conditions

L79L00

Abstract: L79L05ABU L79L05C L79L05CD
Contextual Info: L7 9 L00 S E R IE S NEGATIVE VOLTAGE REGULATORS . OUTPUT CURRENT UP TO 100 mA - OUTPUT VOLTAGES OF-5; -6; -8; -9; -12; -15V - THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . NO EXTERNAL COMPONENTS ARE REQUIRED . AVAILABLE IN EITHER± 5% AC OR ± 10%

MARKING CODE 141

Abstract: 9p marking sot-23 diode L9
Contextual Info: Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch, RF attenuator • Low-distortion factor • Long-term stability of electrical characteristics Type Marking Ordering code tape and reel Pin configuration BAR 14-1 L7 Q 62702-A 7 7 2 3 Package SOT-23 1° M I W

BYV20

Abstract: BYV20-40 byv20 f BYV20-35 F483 BYV20-40A BYV20-30 BYV20-30M M002-6 BYv20#
Contextual Info: N AMER PHILIPS/DISCRETE □ LE D ^53^31 DOllSbl b BYV20 SERIES ~T-03-l7 ' SCHOTTKY- BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in D O -4 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. T h e y are

L79l05

Abstract: L79L00 L79L05ABU L79L05C L79L05CD L79L09
Contextual Info: L7 9 L00 S E R IE S NEGATIVE VOLTAGE REGULATORS . OUTPUT CURRENT UP TO 100 mA - OUTPUT VOLTAGES OF-5; -6; -8; -9; -12; -15V - THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . NO EXTERNAL COMPONENTS ARE REQUIRED . AVAILABLE IN EITHER± 5% AC OR ± 10%

BAT15-090D

Abstract: tuner ku band BAT14-110D BAT15-110D bat14-110s
Contextual Info: Microwave, RF & Tuner Diodes L7^<*3- 0 ¡ For complete package outlines, refer to pages PO-1 through PO-6 Beam Lead Medium Barrier Type Frequency Band GHz BAT14-020 S BAT14-020 D BAT14-020 R BAT14-050 S BAT14-050 D BAT 14-050 R BAT14-090 S BAT 14-090 D BAT14-090 R

Contextual Info: SIEM EN S Silicon PIN Diodes BAR 14-1 . BAR 16-1 • R F switch • R F attenuator for frequencies above 10 M H z • Low distortion factor • Long-term stability of electrical characteristics Type Marking Ordering Code tape and reel B AR 14-1 L7 Q 6 2 70 2 -A 7 7 2

24N50S

Abstract: smd JH IXFH24N50S D2528
Contextual Info: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 W10 Tcase= 80°C, sinusoidal 120°

BC518

Abstract: acer battery pinout ATI RAGE mobility m1 acer 15.6 pinout BC505 R2501a BC466 rdn27 asus BC370
Contextual Info: CLK GEN. ICS9248-61 Acer B-NOTE CPU COPPERMINE PAGE:3 V1.5 PCB LAYER TOP L1 : SIGNAL1 L2 : SIGNAL2 L3 : GND L4 : SIGNAL3 L5 : SIGNAL4 L6 : VCC L7 : SIGNAL5 L8 : SIGNAL6 BOTTOM PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 HOST BUS PAGE:3 MEM BUS DIMM*2

RFP15N12

Abstract: RFP15N15 92CS-39526 RFM15N12 RFM15N15 TA9230 92CS-34019
Contextual Info: 01 3 8 75 0 8 1 G E SOLID De 3 f l7 50 ûl STATE Standard Pow er M O S F E T s 0 1E GD1Û173 18173 7 Di T ~ 3 ? - l RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m b e r 1443 N-Channel Enhancement-Mode

ISOPAC0112

Abstract: Applications Note U-96
Contextual Info: □7 8139139 i / 0 « » Ë ^ | û l3 J 1 3 .T t P SEMTECH CORP 07E 01893 ' D T^C>3-l7 SET010219 MINISTUD HIGH CURRENT ISOLATED RECTIFIER A SSE M B L Y IPSolî, SET010211 HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER STUD « Low thermal impedance

VVZB120-16IOX

Contextual Info: VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 120 A I C25 IFSM = 155 A = 700 A VCE sat = 1.9 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part name VVZB120-16ioX O1 S1 D E1 I1 M1 W1 L7 G7

1SS240

Abstract: ss240 vr-1M ST-40 09345 ST40 diode
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 L7 ¿ F | SOTTESO □ D D ci34S O | T O S H I B A . D I S C R E T E /OPTO 1SS240 67C 09345 -r-os-o J S Silicon E p ita xial-P la n a r Type- - Diode ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm FEATURES: . Low Forward Voltage

PBYR740F

Contextual Info: PBYR735F PBYR740F PBYR745F NA M E RP H I L I P S / D I S C R E T E 25E D D ^ 53=131 0022=133 7 • \T-03-l7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. Their electrical isolation makes

5mm RGB led 4 pin

Abstract: LT3595 IC Generator to 2MHz square SW11 LED television 0.47uF
Contextual Info: L DESIGN FEATURES 16-Channel LED Driver Drives up to 160 White LEDs with 5000:1 PWM Dimming by Keith Szolusha Introduction 0.47µF SW4 L4 L5 SW5 L6 SW6 SW7 L7 0.47µF L13 L12 SW12 L11 SW11 VIN SW10 L10 0.47µF 0.47µF 0.47µF 0.47µF SW8 L8 PWM9 PWM10 PWM11

yaskawa ERF150WJ

Abstract: ERF 2030 45 KW 3-phase motor weight ERF-150WJ ERF150WJ
Contextual Info: Y203-EN2-02-Katalog.book Seite 289 Mittwoch, 24. Mai 2006 2:22 14 CIMR-L7Z Varispeed L7 Made to drive lifts • • • • • • • • • • • • • • • • • One model to control AC and PM motors. Silent operation with no current de-rating.

Contextual Info: D N EW ESI G FO R DED 566 N E L7 OMM SData EE ESheet RE C T O N Integrated Adjustable 6 Amp Synchronous Switcher EL7556D NS March 24, 2003 Features • Improved temperature and voltage ranges The EL7556D is an adjustable synchronous DC:DC switching regulator optimized for a 5V input