L7C187 Search Results

Contextual Info: L7C187 64K x 1 Static RAM DEVICES INCORPORATED I FEATURES DESCRIPTION □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 225 mW typical at 25 ns

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

S187B

Contextual Info: L7C187 64K x 1 Static RAM FEATURES □ 64K x 1 Static RAM w ith Separate I /O , C hip Select Pow erdow n □ A uto-Pow erdow n D esign □ A dvanced C M O S Technology □ High Speed — to 8 ns m axim um □ Low Pow er O peration A ctive: 135 m W typical at 35 ns

Contextual Info: L7C187 J r. V i ; E K 6 4 K x 1 S t a t ic R A M r . C O H - ’C M A T F DESCRIPTION FEATURES □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

L7C187PC20

Abstract: CY7C187 IDT7187 L7C187CC15 L7C187CC20 L7C187PC12 L7C187PC15 L7C187 64k x 1 static ram
Contextual Info: L7C187 L7C187 DEVICES INCORPORATED 64K x 1 Static RAM 64K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

Contextual Info: L7C187 64K x 1 Stal : RAM DEVICES INCORPORATED FEATURES □ 64K x 1 Static RAM with Separate 1 /O, Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ H igh Speed — to 8 n s maximum □ Low Power Operation Active: 135 mW typical at 35 ns

Contextual Info: L7C187 64K x 1 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ □ □ □ Auto-Powerdown Design A dvanced CM OS Technology H igh Speed — to 12 ns m aximum Low Power Operation

L7C187PC25

Contextual Info: LOGIC DEVICES XINC SSbSÌQS OQOOSMb 3 IbE D L7C187 64K x 1 Static RAM -H é-ZZ-oS Features Description □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry

L7C187PC25

Abstract: L7C187PC20 CON12 CY7C187 L7C187PC15 L7C187PC35 L7C187PC45 L7C187PC85 L7C187UC85
Contextual Info: L7C187 64K x 1 Static RAM Features Description □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit per word. Parts are available in six

Contextual Info: L7C187 64K x 1 Static RAM FEATURES Q 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown Q Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 135 mW typical at 35 ns Standby: 500 jiW typical

Contextual Info: L7C187 64K x 1 Static RAM Features_ Description_ □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit

Contextual Info: L7C187 L7C187 DEVICES INCORPORATED 64K x 1 Static RAM 64K x 1 Static RAM DEVICES INCORPORATED DESCRIPTION L7C187 BLOCK DIAGRAM O ROW SELECT 8 as 2 V. The L7C187 consumes only 30 µW typical at 3 V, allowing effective battery backup operation. The L7C187 provides asynchronous

Contextual Info: L7C187 6 4 K x 1 S t a t ic R A M DESCRIPTION FEATURES □ 64K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 225 mW typical at 25 ns

TTL 22pin

Abstract: 8AE20
Contextual Info: LOG IC D E V I C E S INC IbE D SSbSTDS OOQOSMb 3 L7C187 64K x 1 Static RAM T -W -Zl-oS Features Description □ 64K by 1 Static RAM with separate I/O, Chip Select power down □ Auto-Powerdown design □ Advanced CMOS technology □ High speed — to 15 ns worst-case

4Kx4

Contextual Info: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

Package 48 LCC

Contextual Info: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170

Contextual Info: L7C197 256K x 1 Static RAM FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 210 mW typical at 45 ns Standby: 500 nW typical

Contextual Info: 256K 64K x 4-bit Static RAM Module DESCRIPTION FEATURES □ 2 5 6K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply

TWVAV

Abstract: LMM456SC45
Contextual Info: LMM456 256K 64K x 4-bit Static RAM Module FEATURES _ □ 256K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply