L7S4240 Search Results

Contextual Info: O K I electronic components OCM 4X8 SERIES Dual-Channel, Bidirectional Optical M O S Relay with Tw o Channels GENERAL DESCRIPTION The OCM4X8 Series are dual-channel, bidirectional AC optical MOS relays. The device is available in the same form factor as single-channel devices, with 8-pin DIP and F-type (gull w ing) package.

ms1250

Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith

Contextual Info: O K I Semiconductor MSM6652/6653/6654/6655/6656 Speech Synthesizers with Internal ROM DESCRIPTION The MSM6650 family is the successor to the MSM637x family. These speech synthesizers use varying amounts of internal mask ROM for speech playback, as shown in the table below.

Contextual Info: O K I Semiconductor MSC5301B-01 CO M M O N /SEG M EN T DRIVER WITH RAM G E N E R A L D E S C R IP T IO N The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. This allows greater flexibility by bit m apping this on board RAM to control individual sections on the LCD panel. It can form the

MSM7523GS-VK

Abstract: MSM7523RS LJ72 1750 Hz TONE
Contextual Info: O K I Semiconductor MSM7523 Multi-Function Telecommunication LSI GENERAL D ESC R IPTIO N The MSM7523 provides three kinds of functions w hich are often applied for telephone term inal equipm ent. Those are DTMF generator, DTMF receiver an d low speed 300 b p s FSK m odem defined as V.21

MSM51V16405A

Abstract: FC7214
Contextual Info: O K I Semiconductor_ MSM51 V16405 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16405A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16405A is

Contextual Info: O K I Semiconductor MSM5 1V4256 262,144-W ord x 4-B it DYNAMIC RAM DESCRIPTION The M SM 51V 4256 is a new generation dynam ic RA M organized as 262,144-w ord x 4-bit. The technology used to fabricate the M SM 51V 4256 is O K I's C M O S silicon gate process technology. The