L9 TRANSISTOR Search Results

600v 75a

Abstract: ntc 2,0 robot control PS18 SV18 80C154
Contextual Info: VIO 125-12P1 VID 125-12P1 VDI 125-12P1 IC25 = 138 A VCES = 1200 V VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK 10 IK10 VID X15 SV18 L9 S18 X16 X15 L9 T16 IK10 X16 AC1 LMN 9

PS18

Abstract: SV18
Contextual Info: VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A = 1200 V VCES VCE sat typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 SV18 L9 S X16 X15 L9 T16 IK10 X16 AC1 LMN NTC F1

ps18

Abstract: SV18
Contextual Info: VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IC25 = 138 A = 1200 V VCES VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 SV18 L9 S X16 X15 L9 T16 IK10 X16 AC1 LMN NTC F1

IGBT 1500

Abstract: ntc 2,0 power supply 13v 100a robot control PS18 SV18
Contextual Info: VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IC25 = 169 A VCES = 1200 V VCE sat typ. = 2.9 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK 10 IK10 VID X15 SV18 L9 S18 X16 X15 L9 T16 IK10 X16 AC1 LMN 9

transistor NTC 1,0

Abstract: 206 100 psig
Contextual Info: ECO-PACTM 2 IGBT Module PSIG 130/06 PSIS 130/06* PSSI 130/06* PSI 130/06* IC25 = 121 A VCES = 600 V VCE sat typ. = 2.3 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet L9 E2 NTC X15 K10 X16 NTC VX 18 X16 PSI 130/06* IK 10 NTC L9 T16 X15 X13

germanium transistor pnp

Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Contextual Info: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

ISL9H2060EG3

Abstract: LD26 igbt 400V 20A
Contextual Info: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS

transistor P18

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET ID25 VDSS RDSon PSMI 40/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 K12 L9 P18 R18 NTC Preliminary Data Sheet K13 MOSFET

Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon 1 L4 L6 L9 P18 R18 K12 NTC F10 Preliminary Data Sheet K13 MOSFET Symbol VDSS VGS ID25

g0650

Contextual Info: VII 130-06P1 IC25 = 121 A VCES = 600 V VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet OP9 VII L9 GH10 X13 E2 NTC B3 X15 Pin arangement see outlines VX18 K10 X16 Features IGBTs Symbol Conditions

PS18

Contextual Info: VDI 100-06P1 VII 100-06P1 VID 100-06P1 VIO 100-06P1 IC25 = 93 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 L9 G10 X15 X16 F1 NTC Pin arangement see outlines Features

R1560P2

Contextual Info: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

25t120

Abstract: PS18 SV18 NTC 279 T 200
Contextual Info: VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 IC25 = 30 A = 1200 V VCES VCE sat typ. = 2.6V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII VDI AC1 VID IK10 JK VIO P9 L9 X15 G10 F1 X18 X16 Pin arangement see outlines

VKM40-06P1

Abstract: eco-pac vkm40
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

237td

Contextual Info: VKI 50-06P1 IC25 = 42.5 A = 600 V VCES VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 T16 O7 S18 Pin arangement see outlines Features Symbol Conditions

eco-pac

Abstract: transistor P18
Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet

50-12P1

Abstract: PS18 SV18
Contextual Info: VDI 50-12P1 VID 50-12P1 VII 50-12P1 VIO 50-12P1 IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X16 X15 L9 T16 NTC n IK10 Pin arangement see outlines Features

TRANSISTOR Outlines

Abstract: inductive sensor SYMBOL robot control PS18 SV18 5006p1
Contextual Info: VDI 50-06P1 VID 50-06P1 VII 50-06P1 VIO 50-06P1 IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 X16 X15 L9 T16 NTC n IK10 Pin arangement see outlines Features

50-12P1

Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18

Contextual Info: ECO-PACTM 2 Power MOSFET ID25 VDSS RDSon trr PSHM 120D/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 L9 P18 R18 NTC F10 Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

VKM 40-06P1

Abstract: CoolMOS Power Transistor 10P18
Contextual Info: VKM 40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET 1 Package with Electrically Isolated Base L4 L6 Preliminary data K 12 A1 L9 E 10 P 18 R 18 NTC F 10 X 15 K 10 K 13

NF 022

Abstract: 200NS160
Contextual Info: VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IC25 = 138 A = 1200 V VCES VCE sat typ. = 2.8 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO VDI AC1 IJK IK10 VID X15 NTC X16 X15 L9 F1 IK10 X16 AC1 LMN NTC F1 B3 PS18