LA 27 K 125 ME 24 V Search Results

cb346

Abstract: 1RM150 CB47 RECTIFIER Cb28 1N2911 facon F250HL RM2506 fmu 22 u mk plastique
Contextual Info: LJ5E D FACON • 3MSb203 DDDG027 b « F C N FACONSEMICONDUCTEURS/SEMICONDUCTORS ~T [ - O\ high voltage power rectifiers d io d es haute tension d e fort n iveau d e courant V RRM V F/ 'F •f s m ■r / v r r m V BR R <rr C ase Types (A) (KV) 10 m s m ax

hyc2485s

Abstract: hyc9088s-sk HYC2485 HYC2488S HYC9088S MB3771 cross reference XTAL 20MHZ
Contextual Info: TMC2005 PRELIMINARY 5 Port HUB Controller Device FEATURES ! ! ! ! HUB Circuit for ARCNET Protocol Data Rate From 156.25Kbps to 10Mbps Able to Connect Various Transceivers Directly Device Includes TX/RX Timing Circuit for 5 Port Hub and Direction Control Circuit, Jitter

HYC2485S

Contextual Info: TMC2005 SlllgC PRELIMINARY STANDARD MICROSYSTEMS CORPORATION 5 Port HUB Controller Device FEATURES HUB Circuit for ARC NET Protocol Data Rate From 156.25Kbps to 10Mbps Able to Connect Various Transceivers Directly Device Includes TX/RX Tim ing Circuit for 5

Contextual Info: MT5C1009 SRAM 128Kx 8 SRAM WITH SINGLE CHIP ENABLE FEATURES PIN ASSIGNMENT Top View • • • • High speed: 20, 2 5 ,3 5 ,4 5 , 55 and 70ns A utom atic C hip Enable pow er dow n All inputs and outputs are TTL com patible H igh-perform ance, low -pow er C M O S double-m etal

hr5 connector

Abstract: 4E27 5125B EIMAC Application Bulletin 500 watt power 500 watts amplifier grid Antenna tube 4e27
Contextual Info: 4E2JA/5-I25B RADIAL-BEAM POWER PENTODE • E I T E L - M c C U L L O U G H , I nc S A N B R U N O , MODULATOR OSCILLATOR AMPLIFIER C A L I F O R N I A The Eim ac 4 E 2 7 A / 5 - I2 5 B is a power pentode intended for use as a modulator, oscillator or am plifier. The driving-pow er requirem ent is very low, and neutralization problem s are sim plified or

5933 s

Abstract: transmitter tube 807 tube 807 Class A tube 807 tube 807 amplifier tube 807 audio amplifier 807W 250 watt amplifier 807 tube cps cc 100
Contextual Info: •W engineering data service 5933 S Y L V A N I A W ^ . . . . . 807W M E C H A N IC A L QUICK REFERENCE DATA DATA B u l b . T-12 Base1 .Low Loss Phenolic 5-Pin

Contextual Info: DS1 OOO-IN D DALLAS SEMICONDUCTOR FEA TU R E S D S 1 0 0 0 -IN D Industrial Temperature Range 5-Tap Silicon Delay Line PIN A S S IG N M E N T W • All-silicon time delay J Vcc 1 14 NC Q 2 13 Z NC NC Z 3 12 Z TAP 1 TAP 2 Q 4 11 NC Q 5 10 U TAP 4 Z 6 g Z NC

Um 3562

Contextual Info: Y SER IES P lu g -In .35 • MAX. -v 3.9 MAX. I \ r A. .25- DIA. (6.35 DIA. .175" DIA. (4.45 D U .) WHITE DOT AT TERM INAL «1 TERMINALS CLOCKWEE FROM PIN »1 DIMENSIONS ARE IN INCHES (MM) SPECIFICATIONS •M IL-PR F-27:. . . . .

Contextual Info: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i ft x s a s s s s s s s s a s a s ^ 4 5 6 7 8 9 10 II 12 S 13 M 15 16 17 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39

capacitor Y5S 022

Abstract: cm z5u 0.033 m 3kv ceramic disc .01 1kv z5u cera-mite z5u 1kv z5u capacitor sprague cm z5u 6kv cera-mite z5u 3kv y5s 0022 CERA-MITE Y5V 2KV 10TCCT18
Contextual Info: f i - O S -0 5 - 0 1 A COMPANY CERAMIC DISC CAPACITORS Introduction OF SPRflGUE Cera-mite , 1.0 Picofarad to 0.1 M icrofarad CERAMIC DISC CAPACITORS Reliable solutions in EMI/RFI, decoupling, dv/dt and di/dt, snubbers, by-pass, ESR and ESL. Excellent for power supplies: Switcher and high voltage.

PTI 30 040 ga

Abstract: capteur de pression
Contextual Info: Capteurs pour les process industriels Vue d’ensemble – Edition 2013 Partenariat. Précision. Innovation. Capteurs pour les Process Industriels MEX5, MEM5 MIX7, MIM7 MEP5 MEX8 MMN5 MPx6 ge Pa MEX2 MEX3, MEM3 Pression mécanique M MMX1 an M omè an tr o e

Contextual Info: AN2441S A N 2 4 4 1 S S E C A M * 7 - * X > D - y @ H Video Camera SECAM Color Encoder Circuit •m 9 AN2441S ±, ' i t z ' m ■ 4# ■ m m x - t , at • 5.0V • i m S E C A M fH iy 3 > iÄ lfJ n * 7 - «¡ISIjjil: 'v 4-SECAM¿ A 7 n F eatu res • 5. 0V supply voltage operation

oz 9976

Abstract: ojp 241 E112 FET E110 FET 11zs1 LHi 1128 lt 175 1111 E55 ferrite le24 G2L 113
Contextual Info: MIL-M-38510/121A 4 June 1984 su p tR S tu n rG MIL-M-38510/121 2 F e b r u a r y 1982 military specification M I C R O C I R C U I T S , L I NEAR MONOLITHIC AND M U L TI CH I P , 12 B I T DI GI TAL - TO- ANAL OG CONVERTERS SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d for use by all D e p a r t ­

water heater

Abstract: microwave tubes
Contextual Info: 7554 High-Mu Triode FAST WARM-UP TIME CERAMIC-METAL PENCIL TYPE STURDY COAXIAL-ELECTRODE STRUCTURE For Use a t Frequencies up to 5000 Me in C a t h o d e - D r iv e C i r c u i t s under Severe Shock ano1 V ib r a t io n GENERAL DATA E le c t r ic a l: H eater, fo r Uni p o te n tial Cathode:

2E24

Abstract: 2E26 2e24 tube Scans-0017385
Contextual Info: 2E24 VHF BEAM POW ER AMPLIFIER GENERAL DATA E le c tric a l: F ila m e n t, C o ated : V o lt a g e . 6 .3 ± 10% . . . . ac o r dc v o l t s C u r r e n t .0 .6 5 amp H e a tin g T i m e .

Contextual Info: Actel Mask Programmed Gate Arrays F e a tu re s D e s c rip tio n Mask Programmed versions of Actel Field Programmable Gate Arrays FPGAs Significant cost reduction for medium- to high-volume applications Pin-for-pin compatible with Actel FPGAs PCI Local Bus Revision 2 Compliant

XO25

Contextual Info: 1,27mm x 1,27mm .050"x . 050" micro pitch Materials: In s u la to r M a te ria l: . Black Liquid Crystal Polym er C o n ta c t M a te ria l: P hosphor Bronze C u rre n t R a tin g : 2A @ 80°C am bient O p e ra t n g T e m p R an g e : -65=C to +125°C P la tin g

E 13007-1

Abstract: 13007 h3 detail of D 13007 K 13007 he 13007-1 SE 13007 SEC 13005 13005 2 E 13007 sec 13007
Contextual Info: Ml L-H-38510/610 25 FEB R U A R Y 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY SRAM , MONOLITHIC SILICON This specification Is approved for use by all Depart­ ments and Agencies of the Department of Defense.

magnetic circuit EI 24

Abstract: FM1111 EI 33 magnetic SS443A VF443A vp44 ze 003 ic 11L11 sharp FO-55 als micro pack
Contextual Info: i F O - 5 5 I 12- HONEYWELL PART NUMBER VE443A D I M E N S I O N S A P P L Y TO . 0 6 2 ± . 00 2 REV A LEAD ONL Y EJECTOR PIN LOCATION EJECTOR PIN FL US H TO . 003 UNDERFLUSH . 0 0 5 MAX FLASH 3X . 0 1 5 +- .00 00 25 . 03 0 ± .003 S T D " , " R " , " RP

LG12

Abstract: 220 lh nova
Contextual Info: HOW TO ORDER 8 1 L Type Voltage 4 6.3 10 16 25 35 50 63 71 80 100 110 120 125 160 180 200 220 250 280 300 310 315 330 350 385 400 450 500 525 Code Product 8 Element 1 2 Semifinished Product F 4 C<10uF R Decimal point should be expressed by R 0.22uF R22 1uF

HYC4000

Abstract: hyc5000 hyc5000 smsc HYC2485 HYC2485S HYC9088S HYC2488S
Contextual Info: TMC2005-JT ARCNET 5 Port HUB Controller FEATURES ƒ ƒ ƒ ƒ ARCNET HUB Circuit for ARCNET Protocol Data Rate From 156.25Kbps to 10Mbps Able to Connect Various Transceivers Directly Device Includes TX/RX Timing Circuit for 5 Port Hub and Direction Control Circuit, Jitter Correct

CA44-1

Contextual Info: GOOblbS W A T K I N S - JOHNSON CO 73 D WJ-A44-1 3 7 0 0 TO 4 2 0 0 MHz T O -8 CASCADABLE AMPLIFIER • C O M M U N IC A T IO N S BAND: 3700-4200 MHz • T H IR D O R D E R I.P.: +23 dBm TYP. • M E D I U M 'O U TPU T LE V E L: 10.5 dBm (TYP.) O u tlin e D raw in g s

SVI 3003

Abstract: 4022B Leach Relay Reliability QNN1 relay IC 4024B 4022A i3055 marking FAT N06V 4017A
Contextual Info: ?o,LA p ï î ^ U J /56E w m s n m r e -MIL-M-38510/560 2 D e c e m b e r 1981 military specification M I C R O C I R C U I T S , DIGITAL, CMOS, C O U N T E R S / D I V I D E R S , M O N O L I T H I C SI LI CO N Th is s p e c i f i c a t i o n is a p p r o v e d for use by all D e p a r t ­

DTS108

Abstract: 2n2585 DTS103 DTS106 BUY27
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T