LA 4440 IC Search Results

LM 4440

Abstract: LA 4440 IC LA 4440 IC DATA ic 4440 ic la 4440 la 4440 Siemens SLE 4442 SLE4442C Circuits using 4440 IC Siemens SLE
Contextual Info: ICs for Chip Cards SLE 4432/42 Intelligent 256-Byte EEPROM SLE 4440 Intelligent 64-Byte EEPROM SLE 4441 Intelligent 128-Byte EEPROM Data Sheet 09.98 Extension SLE 4432/40/41/42 Data Sheet Extension Revision History: Original Version 09.98 Previous Releases:

ic 4440

Abstract: 5082-4440 ic 5082 4440 4440 amp 5082-4415 4444 5082 F 5082 5082-4403
Contextual Info: 5082-4403 5082-4415 5082-4440 5082-4444 H E W L E T T ^ PACKARD CO M PO N EN TS T E C H N IC A L D ATA APR IL 1976 Features EASILY PANEL M O UNTABLE i 1 METAL BASE HIG H BRIGHTNESS OVER A WIDE VIEW ING ANGLE 8.64 .34 .76 (.03) I RUGGED C O N S T R U C T IO N FOR EASE

TDA4440

Abstract: ic 4440 TDA4450 4440 audio ic ic tda 4450 LA 4440 IC la 4440 ic la 4440 Creative Technologies TDA TDA 4440
Contextual Info: /Èt. m W ' IDA 4440 -TDA 4450 » TlUlFTOKÜfS electronic Creative Technologies VI DE O- IF - A M P L I F I E R FOR COLO UR AN D M O NO CH RO ME T E LE VI SI ON RE CEIVERS Technology: Bipolar Features: o Very high input sensitivity o Very few external components

Contextual Info: THE INFURNATJDN CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY TO PEL FUSE INC, ANP SHALL NOT DE tnpip, pEppnpucEj] np pjsclxisejj without ti-e WRITTEN APPROVAL OF BEL FUSE JNC, LED POLARITY PIN 10 PIN 11 + — + PIN 9 — COLOR GREEN □RANGE LED E LE C T R IC A L C H A R A C TE R IS TIC S @ 2 5 ‘ C

Contextual Info: S C IE N T IF IC / M IN I- C IR C U IT S 4SE ]> • flO b flflll 0001345 most widely-used Frequency Mixers LEVEL 7 T S 1! ■ see T~ ? 4 - 0 9 ~ 0 1 Model SIMA-5 +7 dBm LO, up to +1 dBm RF c o m p u te r-a u to m a te d p e rfo rm a n c e d a ta typical production unit / for data of other models consult factory

550C

Abstract: DAC85 DAC87 DAC87-CBI-I DAC87-CBI-V MSI MS-3
Contextual Info: 000 DDC DAC87 IL C D A T A D E V IC E C O R P O R A T IO N 12 B IT HYBRID D /A C O N V E R TE R W ID E O P ER A TIN G TE M P E R A TU R E R AN G E 100ns Current Settling; 3 / / s Voltage Settling FEATURES • G UARA NTEED SPECIFICATIO NS FRO M —5 5 °C TO +126° C

NSL445

Abstract: NSL-446 NSL447 la 4440 NSL446 NSL444 NSL-447
Contextual Info: SILONEX 50G 00225 DE |fl2SSE71 GOODSSS 4 SO INC 1 W ATT PHOTOCONDUCTIVE CELLS lì T-41-41 LONEX NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated

Silonex

Abstract: NSL-4460 NSL-4450 NSL-4470 photocell 4470 FTC 580 NSL-4440 NSL-4400 NSL447 N2150
Contextual Info: SILONEX INC a a s s a ? ! ociaoan □ 23E D SILONEX £ 1 W ATT PH O TO C O N D U C TIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated

TO128 PACKAGE

Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
Contextual Info: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V

Contextual Info: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series

LA 4440 IC

Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
Contextual Info: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V

t 3866 power transistor

Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
Contextual Info: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C

t 3866 power transistor

Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040
Contextual Info: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V

2N5070

Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
Contextual Info: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V

LA 4440 IC DATA

Abstract: IC la 4440 pin diagram pin diagram of ic 4440
Contextual Info: 000 - DDC DAC87 »LC DATA DEVICE CORPORATION 12 BIT HYBRID D/A CONVERTER WIDE OPERATING TEMPERATURE RANGE 100ns Current Settling; 3 / / s Voltage Settling FEATURES • GUARANTEED SPECIFICATIONS FROM - 5 5 ° C TO +125° C DESCRIPTION APPLICATIONS T he D D C DAC87 is a 12 bit, w ide

Contextual Info: A • R W .\A A P T 12 0 1 R 5 B V R dvanced pow er Te c h n o l o g y “ 1200V io a 1.500Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

L0619

Contextual Info: 1 W ATT PHOTOCONDUCTIVE CELLS N SL-4400 SERIES FcA i bR :3 • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on dem and* - Plastic Encapsulated • Maximum Operating Voltage: 1000 V Peak AC or DC

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvan c ed r M po w er APT5020SVR Te c h n o lo g y soov 26a 0.200Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

eprom 2904

Abstract: 4502 C DRAM 64kx16
Contextual Info: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —

Contextual Info: • R ADVANCED W .\A APT5020SVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

FF212R

Abstract: 4440 ic circuit diagram
Contextual Info: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l

Contextual Info: APT8056BVR A dvanced P ow er Te c h n o l o g y ' 800V 16A 0.560Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®