LAND PATTERN BGA 0,50 Search Results

BGA Package 0.35mm pitch

Abstract: E-tec Interconnect .65mm bga land pattern 1072 Diode, SMD 3M Touch Systems bpw 50 TEC Driver 8 pin ic base socket round pin type lead qualitek BGA reflow guide
Contextual Info: Ball / Land Grid Array Sockets Twist Lock Type E-tec is now the leading BGA socket manufacturer. EP patents 0829188, 0897655 US patents 6190181, 6249440 Patented in other countries. Twist lock sockets are available for any chip size and grid pattern. The SMT socket is simply placed

12x12 bga thermal resistance

Abstract: SZZA005 micro pitch BGA A113 TMS320VC549 TMS320VC549GGU BGA Ball Crack
Contextual Info: Application Report 1998 MicroStar BGA Printed in U.S.A 11/98 SZZA005 MicroStar BGA Semiconductor Group Package Outline Application Report Kevin Lyne and Charles Williams Prepared by: Tanvir Raquib SZZA005 November 1998 Printed on Recycled Paper IMPORTANT NOTICE

SPRU811

Abstract: BGA reflow guide ionograph ionograph spec SZZA021B bga dye pry EndoScope schematic endoscope case to board cte table flip chip substrate
Contextual Info: Flip Chip Ball Grid Array Package Reference Guide Literature Number: SPRU811A May 2005 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 − REVISED NOVEMBER 2006 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D D Interfaces to Backplane, Copper Cables, or Serializer/Deserializer Low Power Consumption < 250 mW at

TLK2201JR

Contextual Info: TLK2201JR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SCAS652D − AUGUST 2000 − REVISED NOVEMBER 2002 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or

Contextual Info: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 − REVISED NOVEMBER 2006 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D D Interfaces to Backplane, Copper Cables, or Serializer/Deserializer Low Power Consumption < 250 mW at

TLK1501

Abstract: TLK2201AJR TLK2701 TLK3101 TLK3104SA TLK3104SC TNETE2201 TNETE2201B H617
Contextual Info: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or

Contextual Info: TLK2201AJR 1.0 Gb to 1.6 Gb SMALL FORMĆFACTOR ETHERNET TRANSCEIVER SLLS614 − MARCH 2004 D 1.0-to 1.6-Gigabits Per Second Gbps D D D D D D D IEEE 802.3 (Gigabit Ethernet) Compliant D Advanced 0.25-µm CMOS Technology D Interfaces to Backplane, Copper Cables, or

JESD22-A-101

Abstract: JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K060T040
Contextual Info: PRELIMINARY VTM V048K060T040 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 6 V V•I Chip Converter • 125°C operation • 40.0 A 60.0 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K096T025 JESD22-B107 JESD22-B107-A AE3A
Contextual Info: PRELIMINARY VTM V048K096T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 9.6 V V•I Chip Converter • 125°C operation • 25.0 A 37.5 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K030T070 smd diode marking sG
Contextual Info: PRELIMINARY VTM V048K030T070 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 3 V V•I Chip Converter • 125°C operation • 70 A 105 A for 1 ms • 1 µs transient response • High density – 284 A/in3 K indicates BGA configuration. For other

IPC-9701

Contextual Info: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K120T025
Contextual Info: PRELIMINARY VTM V048K120T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1200 W/in3 K indicates BGA configuration. For other

JESD22-A-103A

Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K480T006 337 BGA footprint
Contextual Info: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF

337 BGA footprint

Abstract: IPC 9701
Contextual Info: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

IPC-9701

Abstract: JESD22-A-101
Contextual Info: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms

BCM reflow

Abstract: smd transistor marking SG smd transistor v2 IPC-9701
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3

transistor af 126

Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

JESD22-A-103A

Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms

48V-to-12V

Abstract: smd TRANSISTOR marking T1
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3

A3G3

Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K030T21 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 3 V V•I Chip Converter • 94% efficiency • 210 Watt 315 Watt for 1 ms