LAND PATTERN FOR TSOP IDT Search Results

Contextual Info: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: jd t Integrated Device Technology, Inc. 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K 32K x 8-BIT) IDT71V256SB FEATURES DESCRIPTION • Ideal for high-perform ance processor secondary cache • Fast access tim es: — 12/15/20ns • Inputs are 2.5V and LVTTL com patible: V ih = 1,8V

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

DD27D

Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin

woy transistor

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

land pattern for TSOP 2 44 PIN

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

land pattern for TSOP 2 44 PIN

Abstract: com 6116 e2 CHN 920
Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es

land pattern for TSOP 2 54 pin

Abstract: TSOP 54 land pattern AS7C1024 AS7C31024 land pattern for TSOP 2 44 PIN
Contextual Info: H igh P erfo rm an ce •■ 128Kx8 A S7C 1024 A S7C 31024 H CMOS SRAM 1 2 8 K X 8 CM O S SRAM C o m m o n I / O Features • O rg a n iz a tio n : 1 3 1 ,0 7 2 w o rd s x 8 b its • H ig h sp e ed - 3 0 0 m il PDIP a n d SOJ - 1 0 / 1 2 / 1 5 / 2 0 n s ad d ress access tim e

ln 3624

Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Contextual Info: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

ed9a

Abstract: woy transistor
Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT ADVANCE INFORMATION IDT71T016 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

s0324

Abstract: land pattern for TSOP idt IDT land pattern tsop 6
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

R50-E2Y2-24

Abstract: sk 8085 84 pin plcc ic base Aromat TQ2E-24V UT1553BCRTM INTEL 486 dx2 soic40 plcc44 pinout numbers XE4006E 68hc001
Contextual Info: Ironwood Electronics PC.1 IC Package and Device Converters We offer over 500 adapters for converting IC packaging and device pinouts, solving many IC availability and performance issues. We also offer "fix" adapters to solve layout problems and some known chip deficiences. Custom, quick turn solutions are our speciality.

Contextual Info: H ig h P e r fo r m a n c e 1M X 16 CM OS DRAM A S4C 1M 16F5 h I II l M x 1 6 C M O S D R A M fa st paae m od e Preliminary information Features • Organization: 1,048,576 words x 16 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RA S-only o r CAS-before-RAS re fresh

Contextual Info: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion

Contextual Info: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA

land pattern for TSOP idt

Abstract: ls 74 79 flip flop
Contextual Info: HIGH-SPEED 16K X 16 DUAL-PORT STATIC RAM IDT7026S/L Features * * * * plexed bus compatibility IDT7026 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one d e v ic e _ ♦ M/S = H for BUSY output flag on Master,

Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V08S/L F e a tu re s True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access * - * Low-power operation - ♦ Com m ercial: 15/20/25/35ns max. ID T70V08S