jdsu 6396
Abstract: JDSU pump laser fiber pumping coupler 630032 6396-L3 6396
Text: COMMERCIAL LASERS High-Power 6.5 W 9xx nm Fiber-Coupled Diode Laser 6396-L3 Series Key Features • 6.5 W output power • 100 µm aperture • 0.2 NA • Highly reliable Applications • Yb laser pumping • Material processing • Graphic arts • Medical
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6396-L3
6396L3
498-JDSU
5378-JDSU
jdsu 6396
JDSU pump laser
fiber pumping coupler
630032
6396
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laser 950nm
Abstract: LDB 107 "Laser Power Meter" 2 Wavelength Laser Diode erbium glass diode laser diode array low power DIODE YV 950 60741 850C MDR-23
Text: In: High-Power and Femtosecond Lasers Editor: Paul-Henri Barret and Michael Palmer, pp. ISBN 978-1-60741-009-6 2009 Nova Science Publishers, Inc. Short Communication HIGH POWER LONG PULSE WIDTH QCW LASER DIODE BARS FOR OPTICAL PUMPING OF YB-ER GLASS SOLID STATE LASERS
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-400C
laser 950nm
LDB 107
"Laser Power Meter"
2 Wavelength Laser Diode
erbium glass diode
laser diode array low power
DIODE YV 950
60741
850C
MDR-23
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Untitled
Abstract: No abstract text available
Text: IR infrared Detection Card 950nm - IF 850053 - Industrial Fiber Optics, Inc. Page 1 of 1 You Are Here: Home > Tools/Test Equipment > Miscellaneous > IR (infrared) Detection Card 950nm IR (infrared) Detection Card 950nm Credit card size indicator for viewing IR
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950nm
950nm
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8x8 VCSEL array
Abstract: Avalon Photonics vcsel array 8x8 VCSEL avalon-photonics 950-nm laser 950nm
Text: AP950 501 950nm Multi-Mode VCSEL Array 250 µm 90 µm Preliminary datasheet - not released for production 120 µm 125 µm 15 µm wiring width 175 µm Features • 8x8 VCSEL ARRAY • 950nm WAVELENGTH RANGE WAVELENGTH • HIGH UNIFORMITY EMISSION • SYMMETRIC
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AP950
950nm
AP950
5018x8
950nm
8x8 VCSEL array
Avalon Photonics
vcsel array
8x8 VCSEL
avalon-photonics
950-nm
laser 950nm
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Untitled
Abstract: No abstract text available
Text: BI-CELL AND QUADRANT PHOTODIODES SPECIFICATIONS PER ELEMENT Responsivity: 0.32 A/W min., 0.38 A/W typ. @ 632.8nm; 0.50 A/W min., 0.62 A/W typ. @ 900nm Non-uniformity between elements: Part Number Total Shunt Area Resistance1 per Element (mm2) 5% deviation max., 1% typ.
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900nm
950nm
18uadrant
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idec 7-segment display module
Abstract: automatic curtain system x37mm
Text: IDEC-DATASENSOR Safety Light Curtains Safety Light Curtains Type 2 SG2 Series Basic & Extended Models Hand Protection Type 4 SG4 Series Presence Protection Finger Protection • Integrated light curtain for Hand Protection or Presence Control • Operating distance up to 19m
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1800mm
800-262-IDEC
SG9Y-DS100-0
idec 7-segment display module
automatic curtain system
x37mm
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sd172
Abstract: sd172 photodiode
Text: SD 172-11-31-221 Red Enhanced Ultra Low Capacitance Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08]
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sd172-11-31-221
sd172
sd172 photodiode
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sensor pcb
Abstract: WS-7.56-TO5 PSS WS-7.56 Wavelength 450nm westlake 150 laser 950nm Photodiode as light sensor silicon diode temperature sensor laser sensor accuracy 20/PSS WS-7.56
Text: Pacific Silicon Sensor Inc. Data Sheet PSS WS-7.56 PCBA Sensor and Circuit PRELIMINARY DATA WAVELENGTH SENSOR AND CIRCUIT PSS-WS-7.56-PCBA The PSS-WS-7.56-PCBA is a unique wavelength sensor based on silicon photodiode technology. The sensor is constructed monolithically by superimposing two photodiodes vertically. The active
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56-PCBA
56-PCBA
56mm2
sensor pcb
WS-7.56-TO5
PSS WS-7.56
Wavelength 450nm
westlake 150
laser 950nm
Photodiode as light sensor
silicon diode temperature sensor
laser sensor accuracy
20/PSS WS-7.56
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0852321021
Abstract: No abstract text available
Text: SD 085-23-21-021 Red Enhanced Quad Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .130 [3.30] .120 [3.05] 45° .075 [1.90] 5X Ø.018 [0.46] 1 5 Ø.200 [5.08] PIN CIRCLE Ø.225 [5.72] Ø.215 [5.46] 86° VIEWING Ø.330 [8.38]
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5x10-14
660nm
sd085-23-21-021
0852321021
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Untitled
Abstract: No abstract text available
Text: SD 055-23-21-211 Red Enhanced Quad Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .200 [5.08] .132 [3.35] Ø.100 [Ø2.54] PIN CIRCLE 6X Ø.017 [0.43] 5 Ø.154 [3.91] 67° VIEWING Ø.184 [4.67] ANGLE 4 6 C B A 3 D 1 2 Ø.210 [5.33]
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2x10-14
660nm
sd055-23-21-211
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Untitled
Abstract: No abstract text available
Text: SD 380-23-21-251 Red Enhanced Quad Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .195 [4.95] .185 [4.70] Ø1.005 [25.53] Ø.995 [25.27] .100 [2.54] CHIP PERIMETER 6X Ø.018 [0.46] 2 1 3 45° 45° Ø.700 [17.78] Ø.690 [17.53]
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si0x10-14
660nm
sd380-23-21-251
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Untitled
Abstract: No abstract text available
Text: SD 225-23-21-040 Red Enhanced Quad Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] CHIP PERIMETER .075 [1.91] 45° Ø.505 [12.83] Ø.495 [12.57] 5X Ø.018 [0.46] C B D A .075 [1.90] Ø.050 [1.27] THRU HOLE Ø.425 [10.79] 5
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quad-ce10-14
660nm
sd225-23-21-040
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Untitled
Abstract: No abstract text available
Text: SD 066-24-21-011 Red Enhanced Bi-Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .209 [5.31] .200 [5.08] Ø.215 [5.46] Ø.210 [5.33] 45° .055 [1.40] 3X Ø.018 [0.46] Ø.100 [Ø2.54] PIN CIRCLE 1 Ø.156 [3.96] Ø.152 [3.86] 42°
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2x10-14
660nm
sd066-24-21-011
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SD160
Abstract: No abstract text available
Text: SD 160-24-21-021 Red Enhanced Bi-Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .128 [3.25] .110 [2.79] 45° .075 [1.91] 3X Ø.018 [0.46] 1 Ø.236 [5.99] Ø.228 [5.79] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE
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Dx10-14
660nm
sd160-24-21-021
SD160
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SD11324
Abstract: SD113 1132421
Text: SD 113-24-21-021 Red Enhanced Bi-Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .075 [1.91] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE
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5x10-14
660nm
sd113-24-21-021
SD11324
SD113
1132421
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11823
Abstract: SD118 O228 quad photodiode silicon mhz laser 950nm
Text: SD 118-23-21-021 Red Enhanced Quad Cell Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .128 [3.25] .110 [2.79] 45° .075 [1.91] 5X Ø.018 [0.46] 1 Ø.236 [5.99] Ø.228 [5.79] Ø.330 [8.38] Ø.320 [8.13] 113° VIEWING ANGLE 4 CHIP
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5x10-14
660nm
sd118-23-2-021
11823
SD118
O228
quad photodiode silicon mhz
laser 950nm
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S239P
Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Text: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted
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S239P
D-74025
quadrant detector
quadrant photodiode CD
S 239 P
s 239 l
L05 diode
1S239
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CLCC52
Abstract: rolling shutter with global reset CMOS global shutter
Text: AMI Semiconductor AMIS-70700 CMOS Image Sensor Key Features AMIS-70700 CMOS Image Sensor - Feature Sheet • • • • • • • Up to 60 frames per second with full resolution Up to 120dB dynamic range with LinLog technology No smear due to global shutter
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AMIS-70700
120dB
M-20463-001,
CLCC52
rolling shutter with global reset
CMOS global shutter
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Untitled
Abstract: No abstract text available
Text: LED-Anzeigesysteme In die Entwicklung dieser Bausteine ist das über Jahrzehnte erworbene Knowhow der Firma MENTOR als Entwickler und Lieferant von Bauelementen für die Industrieelektronik geflossen. Die Bauelementen-Vielfalt erstreckt sich von THTEinzelanzeigen in unterschiedlichsten
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PP1191FB
Abstract: No abstract text available
Text: PP1191FB Surface Mount PIN Photodiode/Side Viewing Type Features Package Product features Side Viewing type, Black Visible Radiation Cut Filter epoxy ・Outer Dimension 3.0 x 2.0 x 1.0 mm L x W x H ・Photo Current : 1.8 A TYP. (VR=5V,Ee=5mW/cm2) ・Visible Radiation Cut Filter under 700nm
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PP1191FB
700nm
950nm
000pcs
180mm
PP1191FB
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GP1A173LCS2F
Abstract: No abstract text available
Text: GP1A173LCS2F GP1A173LCS2F Gap : 5.0mm Slit : 0.5mm *OPIC Output, Snap-in type Compact Transmissive Photointerrupter with connector •Description ■Agency approvals/Compliance GP1A173LCS2F is a standard, OPIC output, transmissive photointerrupter with opposing emitter
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GP1A173LCS2F
GP1A173LCS2F
2002/95/EC)
OP13016EN
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GP1A173LCSVF
Abstract: No abstract text available
Text: GP1A173LCSVF GP1A173LCSVF Gap : 5.0mm Slit : 0.5mm *OPIC Output, Snap-in type Compact Transmissive Photointerrupter with connector •Description ■Agency approvals/Compliance GP1A173LCSVF is a standard, OPIC output, transmissive photointerrupter with opposing emitter
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GP1A173LCSVF
GP1A173LCSVF
2002/95/EC)
OP13032EN
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CY146
Abstract: No abstract text available
Text: GP1A273LCS1F GP1A273LCS1F Gap : 5.0mm Slit : 0.7mm *OPIC Output, Snap-in type Compact Transmissive Photointerrupter with connector •Description ■Agency approvals/Compliance GP1A273LCS1F is a standard, OPIC output, transmissive photointerrupter with opposing emitter
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GP1A273LCS1F
GP1A273LCS1F
2002/95/EC)
OP13033EN
CY146
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EG*G Optoelectronics
Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c
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C30724P
900nm
C30724P
EG*G Optoelectronics
C30724
EG&G
VS289
MIL-Q-9858A
Si apd photodiode 800 nm
EG&G optoelectronics
apd bias 200v
eg&g HUV-1100
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