LASER DIODE 10 PIN Search Results

Contextual Info: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

Contextual Info: DATASHEET Photon Detection C86155E-10 Quasi-Continuous-Wave 980 nm Laser Diode The C86155E-10 high energy fiber pigtailed Quasi-Continuous-Wave Quasi-CW Laser Diode has been designed specifically to meet the demanding requirements of Laser Initiated Ordnance (LIO) applications.

NX8346

Contextual Info: LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

nec 2702

Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
Contextual Info: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

NX8341

Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
Contextual Info: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

TOSA pcb

Contextual Info: LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type

Contextual Info: DATA SHEET VISIBLE LASER DIODE NDL3215 10 mW 670 nm LONG RANGE BAR CODE READER, MEASUREMENT APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3215 is an AIGalnP 670 nm visible laser diode and especially developed fo r Long Range Bar Code Reader,

NEC DIODE LASER

Contextual Info: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: Preliminary Data Sheet NX8349YK LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0118EJ0100 Rev.1.00 Dec 13, 2013 DESCRIPTION The NX8349YK is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode

NX8341UH

Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

TOLD9442M

Abstract: laser diode toshiba 650
Contextual Info: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: TOLD9231M 670NM Laser-Diode told daiode
Contextual Info: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: DATA SHEET LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type

NX8341UJ

Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

nec 2702

Abstract: nec 2702 K
Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Contextual Info: Preliminary Data Sheet NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

laser diode toshiba

Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Contextual Info: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Contextual Info: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: DATA SHEET LASER DIODE NX8341,NX8343,NX8344 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341, NX8343, and NX8344 Series are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA

Contextual Info: Preliminary Data Sheet NX8369TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0044EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode

10 gb laser diode

Abstract: PX10160E
Contextual Info: Preliminary Data Sheet NX8349TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0001EJ0100 Rev.1.00 Jul 26, 2010 DESCRIPTION The NX8349TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode

Contextual Info: Preliminary Data Sheet NX8369TB LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0043EJ0100 Rev.1.00 Jun 06, 2011 DESCRIPTION The NX8369TB is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode

Contextual Info: Preliminary Data Sheet NX8349TS LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION R08DS0002EJ0200 Rev.2.00 Dec 13, 2013 DESCRIPTION <R> The NX8349TS is 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode