LATTICE LM 45 Search Results

Vishay diode u60

Abstract: LATTICE 3000 SERIES alcon lm 555 diagram GaAs p-n diode Light-emitting diode inp
Contextual Info: Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.

LED top layer reflector

Abstract: telefunken diodes SI 61 L 565nm led detector 650nm Receivers lattice LM 45 diode SI 61 L telefunken
Contextual Info: Vishay Telefunken Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.

929p

Abstract: Light-emitting diode inp silicon carbide LED Gan on silicon substrate
Contextual Info: VISHAY Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.

DWG-001216

Abstract: 001216 NCP15XH103J03RC dj bj 810 215R6 CBT-90 DNG14-250FL
Contextual Info: PRODUCT DATA SHEET PRELIMINARY PhlatLight LED Illumination Products CBT-90 RGB Features • Extremely high optical output: Over 810 Red Lumens Over 1800 Green lumens Over 450 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 ºC/W

physics

Abstract: lattice LM 45 565nm led detector tr 4as silicon carbide LED
Contextual Info: Vishay Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.

Contextual Info: Lattice GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 10ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs

SLIC DIAGRAM

Abstract: br06 BR08 plc array Bc600 OR3T125 OR3T20 OR3T30 ORCA Series 3C ORCA Series 2
Contextual Info: Product Brief January 2002 ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, 0.35 µm and 0.3 µm 4-level metal technology 4- or 5-input look-up table delay of 1.2 ns with -7 speed grade in 0.3 µm .

CBT-120

Abstract: PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124
Contextual Info: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-120 Series Features • Extremely high optical output: Over 1225 Red Lumens Over 2000 Green lumens Over 470 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 0.7 ºC/W

CF 775

Abstract: cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09
Contextual Info: PRODUCT DATA SHEET PhlatLight LED Illumination Products CBT-40 Series Features • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens • High thermal conductivity package - junction to heat sink thermal resistance of only 1.8 ºC/W

64k nmos static ram

Abstract: CS 2131 277339 803C SR64K8-45 SR64K8-55 static ram 8K jez4
Contextual Info: SR64K8 HIGH PERFO RM ANC E 6 4 K S T A T IC RAM 8 K x 8 — P re lim in a ry - a r F U N C TIO N A L B LO C K DIAG RAM FEATU RES FULLY STATIC CMOS — No Clocks Required A5— A,— FAST ACCESS TIME = CYCLE TIME — SR64K8-35: 35 ns Max — SR64K8-45: 45 ns Max

TLMB100

Abstract: light-sensitive resistor GaAs silicon carbide LED telefunken diodes SI 61 L
Contextual Info: T e m ig TELEFUNKEN Semiconductors Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as

DS0075

Abstract: GAL22LV10C
Contextual Info: Lattice G A L 2 2 L V 1 0 C Low Voltage E2CMOS PLD Generic Array Logic ] Semiconductor I Corporation FEATURES • 3.3V LOW VOLTAGE 22V10 A rchitecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max. FUNCTIONAL BLOCK DIAGRAM

Contextual Info: Lattice •■■■■■ GAL22LV10C Semiconductor Corporation Low Voltage E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • 3.3V LOW VOLTAGE 22V 10 Architecture — Interfaces with Standard 5V TTL Devices — 45m A Typical Active C urrent 75m A Max.

GAL6001-30P

Abstract: ic 8155 block diagram GAL6001-30J
Contextual Info: Lattice GAL6002B High Performance E2CMOS FPLA Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 15ns Maximum Propagation Delay — 75MHz Maximum Frequency — 6.5ns Max. Clock to Output Delay — TTL Compatible 16mA Outputs

loadable 4 bit counter

Contextual Info: Lattice ispLSI and pLSI 6192 ; Semiconductor I Corporation High Density Programmable Logic with Dedicated Memory and Register/Counter Modules — 96 I/O Pins with Input Registers — Security Cell Prevents Unauthorized Design Copy­ ing Features • A FAMILY OF HIGHLY INTEGRATED, CELL-BASED,

ispGAL16Z8-25L

Abstract: GAL programming Guide LA1T PAL Decoder 16L8 GAL16V8 T-25 0/ispGAL16Z8
Contextual Info: Lattice Semiconductor is p G A L 1 6 Z 8 In-System Programmable Generic Array Logic Corporation™ U.S. Patents 4.761.768 n d 4766,569 FU N C TIO N AL BLOCK DIA GR A M FEA TU RES • IN-SYSTEM -PROGRAM M ABLE - - 5-VOLT ONLY — Change Logic "On the Fly" In le ss than 1 s

Contextual Info: PT39 Product Datasheet PT39 LEDs Features: • Matched RGB Chipset with 3.9 mm2 emitting area designed for LED projector applications Table of Contents Technology Overview. . . . . . 2 • Photonic lattice technology for very high surface brightness and uniform surface

CBT-120

Contextual Info: CBT-120 CBT-120Product Product Datasheet CBT-120 LEDs Features: Table of Contents Technology Overview. . . . . . 2 Test Specifications . . . . . . . . . 2 Bin Codes. . . . . . . . . . . . . . . . . . 3 • Extremely high optical output: Over 1225 Red Lumens

Contextual Info: CBT-120 CBT-120Product Product Datasheet CBT-120 LEDs Features: Table of Contents Technology Overview . . . . . .2 Test Speciications . . . . . . . . .2 Bin Codes . . . . . . . . . . . . . . . . . .3 • Extremely high optical output: Over 1225 Red Lumens

Contextual Info: LÆ y S R 6 4 K 8 HIGH-SPEED 64K STATIC RAM 8 K x8 FUNCTIONAL BLOCK DIAGRAM FEATURES • FULLY STATIC - v Cc — No Clocks Required - GND A 5— • FAST ACCESS TIME = CYCLE TIME — — — — SR64K8-35: SR64K8-40: SR64K8-45: SR64K8-55: a 7— a8—.

Contextual Info: CBT-40 Product Datasheet CBT-40 LEDs Features: Technology Overview. . . . . . 2 • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens Test Specifications . . . . . . . . . 2 • High thermal conductivity package - junction to heat sink thermal resistance of only

Contextual Info: CBT-40 Product Datasheet CBT-40 LEDs Features: Technology Overview . . . . . .2 • Extremely high optical output: Over 310 Red Lumens Over 725 Green lumens Over 150 Blue Lumens Test Speciications . . . . . . . . .2 • High thermal conductivity package - junction to heat sink thermal resistance of only

Contextual Info: Lattice G AL20RA10 High-Speed Asynchronous E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E’CM O S* TECHNOLOGY — 12 ns Maximum Propagation Delay — Fmax =71.4 MHz — 12 ns Maximum from Clock Input to Data Output

416RP

Abstract: gal 16v8 programming specification
Contextual Info: Lattice G A L16LV8C Low Voltage E2CMOS PLD Generic Array Logic . . . J Semiconductor i • ■ ■ Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • 3.3V LOW VOLTAGE — Interfaces with Standard 5V TTL Devices — 45mA Typical Active Current 65mA Max.