LB 124 TRANSISTOR Search Results

2n2222 h parameter values

Abstract: 2n2222 2n2222a 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit 2N2222, 2N2222A 2n2222 test circuit
Contextual Info: Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching.

DS199

Contextual Info: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage

LB 124 transistor

Contextual Info: KSB907 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSD1222 ABSOLUTE MAXIMUM RATINGS Characteristic

LB 124 transistor

Abstract: transistor 45 f 123 BU2506DF
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2506DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

DT124TUA

Abstract: DTA124TE DTA124TH DTA124TKA DTA124TSA DTA124TUA
Contextual Info: Transistors DTA124TH / DTA124TE / DTA124TUA / _ DTA124TKA / DTA124TSA Digital transistors built in resistor DTA124TH I DTA124TE I DT124TUA/ DTA124TKA/ DTA124TSA •Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input

LB 124 transistor

Abstract: LB 122 transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

Contextual Info: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT549 ISSUE 1 - SEPT 93 FEATURES * 30 Volt V,CEO 1 Amp continuous current Pto,= 1 Watt REFER TO ZTX549 FOR GRAPHS E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage

TIP30

Contextual Info: TIP30 SERIES TIP30/30A/30B/30C PNP EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage : : : : : TIP30

I8 SOT23

Abstract: FMMT495 F10Q
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IS S U E 3 - N O V E M B E R 1995 P A R T M A R K IN G D E TA IL • FMMT495 O 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base Voltage Colleetor-Em itter Voltage VALUE U N IT

Contextual Info: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000

LB 122 transistor

Abstract: LB 124 transistor BU1706AX ballast electronic hps ELECTRONIC BALLAST 150 W HPS
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.

IS0124U

Abstract: IS0124P is0124 IS012 LB 124 d
Contextual Info: IS0124 Precision Lowest Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • INDUSTRIAL PROCESS CONTROL: Transducer Isolator, Isolator for Thermo­ couples, RTDs, Pressure Bridges, and Flow Meters, 4mA to 20mA Loop Isolation

2PD601R

Abstract: 2PD601A 2PD601S 2PB709A 2PD601Q marking YQ transistor sc59 marking 2PB709 2PD601 2PD601AQ
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors 2PD601; 2PD601A FEATURES • High DC current gain • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general amplification. DESCRIPTION NPN transistor in a plastic SC59

2n2396

Abstract: 2N696 2N2395 TI432
Contextual Info: TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS BU LL E T IN NO. DL-S 646083, OCTO BER 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI432, TI433 • Electrically Similar To 2N696 and 2N697 • Compatible Package For Interfacing with

NE681M03

Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

X70H

Contextual Info: PLESSEY SEMICOND/DÏSCRETE 03 DE | 752DS33 DDGbfc.43 3 NPN silicon planar small signal transistor BCX70 é. T- A B S O L U T E M A X IM U M R A T IN G S S ym bol P aram eter C o llecto r-E m itter V o ltag e C o llecto r-E m itter V o ltag e E m itter-B ase V o lta g e

D40C7

Contextual Info: Data Sheet D40C7 Central NPN SILICON DARLINGTON POWER TRANSISTOR Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR D40C7 type is a NPN Silicon Darlington Power Transistors designed general

ptb20134

Abstract: LB0A
Contextual Info: ERICSSON ^ PTB20134 30 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Key Features Description • • • • The 20134 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 860-900 MHz frequency band. It is rated at 30 Watts minimum output power and

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • • • • Collector-Em itter Voltage V ceo * -120V fr-120M Hz Collector Dissipation PC“ 1~2W: Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25 TC C haracteristic

BFX69

Abstract: bfx 63 BFX69A 20MH TL26
Contextual Info: BFX69 B FX6 9 A SILICON PLANAR NPN G EN ER A L PURPOSE A M PLIFIER S The B F X 69 and B F X 6 9 A are silicon planar epitaxial NPN transistors in Jedec T O -3 9 metal case. The y are designed for am plifier applications over a wide range of voltage and current.

Contextual Info: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.

8130A

Abstract: 2N4891 2N4900 2N4898 TO-213AA Package 2N4899 s2c-s 1B transistors clare mercury relay RCA-2N4898
Contextual Info: UT 3875081 G E SOLID STATE "D È ~ ÏH ô 7 5 0 a i 0 1E 17377 0017377 D ! '3 3 7 ~ General-Purpose Power Transistors File N u m b e r 1150 Silicon P-N-P * Medium-Power Transistors 2N4898, 2N4899, 2N4900 T ER M IN A L D ESIG N A T IO N S General-Purpose Types for Sw itching A pplications

Contextual Info: KSB906 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSD1221 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V VcEO -60 -60 V ebo -7 V A Collector Base Voltage Collector Emitter Voltage