LC 945 P TRANSISTOR NPN Search Results

LC 945 P TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

LC 945 P TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
lc 945 p transistor Abstract: transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184 Contextual Info: VfSMAY _ S822T/S822TW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.	OCR Scan	S822T/S822TW S822T S822TW 20-Jan-99 lc 945 p transistor transistor 2 FC 945 VISHAY MARKING SJ transistor CB 945 lc 945 p transistor BU 184	PDF
lc 945 p transistor Contextual Info: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.	OCR Scan	S852T/S852TW S852T S852TW 20-Jan-99 lc 945 p transistor	PDF
transistor BC 945 Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B Contextual Info: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage	OCR Scan	2sa733. t0-92b 100mA 200mA 250mW transistor BC 945 BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945	PDF
527H Abstract: D 1413 transistor S822T Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features	OCR Scan	S822T 1300M 08-Apr-97 G8-Apr-97 527H D 1413 transistor S822T	PDF
lc 945 p transistor Abstract: transistor LC 945 lc 945 transistor Contextual Info: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for	OCR Scan		PDF
lc 945 p transistor NPN TO 92 Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan		PDF
lc 945 p transistor NPN Abstract: lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A ph2222 65LC ph2222a lc 945 transistor Contextual Info: Philips Semiconductors Product specification NPN switching transistors PH2222; PH2222A FEATURES PINNING • High current max. 600 mA PIN DESCRIPTION • Low voltage (max. 40 V). 1 2 base APPLICATIONS 3 collector emitter • Switching and linear amplification.	OCR Scan	PH2907 PH2907A. PH2222; PH2222A PH2222 PH2222A lc 945 p transistor NPN lc 945 p transistor NPN TO 92 lc 945 p transistor PH2907A 65LC lc 945 transistor	PDF
lc 945 p transistor NPN Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for	OCR Scan	T-------------14 lc 945 p transistor NPN lc 945 p transistor transistor LC 945 lc 945 transistor	PDF
ericsson 20144 Abstract: lc 945 p transistor Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan		PDF
lc 945 p transistor NPN Contextual Info: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan		PDF
lc 945 p transistor NPN TO 92 Abstract: lc 945 p transistor lc 945 transistor lc 945 p transistor NPN Contextual Info: ERICSSON ^ PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor D escription The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
2sc 945 p transistor Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC Contextual Info: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e	OCR Scan	2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC	PDF
Contextual Info: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP	OCR Scan	IEC-68-2-54 Std-002-A	PDF
transistor R1d Abstract: ericsson 20144 Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP	OCR Scan	IEC-68-2-54 Std-002-A transistor R1d ericsson 20144	PDF

lc 945 p transistor NPN Abstract: BFR96S Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S	PDF
Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20003 is a class AB, NPN, com m on em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 W atts minim um output power, it may be used for	OCR Scan		PDF
BY239-800 Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides	OCR Scan	LLE16120X OT437A. BY239-800 MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit	PDF
Contextual Info: ERICSSON ^ PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
transistor marking 1p Z Contextual Info: Tem ic S852T Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage	OCR Scan	S852T 08-Apr-97 1300MHz transistor marking 1p Z	PDF
lc 945 p transistor NPN TO 92 Contextual Info: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended	OCR Scan		PDF
lc 945 p transistor Abstract: 362-0 transistor Contextual Info: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features	OCR Scan	S852T 1300MHz 08-Apr-97 lc 945 p transistor 362-0 transistor	PDF
T0-92B Contextual Info: 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. CASE T0-92B <cy I !I • ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO	OCR Scan	2SC945 2SA733. T0-92B 100mA 200mA 250mW BOX69477	PDF
Contextual Info: ERICSSON ^ Preliminary PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20177 is a class AB, NPN, common emitter RF Power Tran sistor intended for 26 VDC operation across the 925-960 MHz frequency band. It is rated at 150 Watts minimum output power	OCR Scan	IMD-28dBc 400mA	PDF
b0945 Abstract: bd947 BD944 BD945 BD943 Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA	OCR Scan	BD944; BD943 lc-500mA O-220. BD947. 7Z82147 7Z82146 003MS40 BD945 b0945 bd947 BD944 BD945 BD943	PDF

LC 945 P TRANSISTOR NPN Search Results

LC 945 P TRANSISTOR NPN Result Highlights (5)

LC 945 P TRANSISTOR NPN Datasheets Context Search

lc 945 p transistor

lc 945 p transistor

transistor BC 945

527H

lc 945 p transistor

lc 945 p transistor NPN TO 92

lc 945 p transistor NPN

lc 945 p transistor NPN

ericsson 20144

lc 945 p transistor NPN

lc 945 p transistor NPN TO 92

2sc 945 p transistor

transistor R1d

lc 945 p transistor NPN

BY239-800

transistor marking 1p Z

lc 945 p transistor NPN TO 92

lc 945 p transistor

T0-92B

b0945