LCC28 Search Results
LCC28 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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10A PWM lead acid Charger
Abstract: uc3906 Battery 12v 10a uc3906 L-803 ic UC2909 4925 B transistor
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UC2909 UC3909 UC3909 UDG-95009 10A PWM lead acid Charger uc3906 Battery 12v 10a uc3906 L-803 ic 4925 B transistor | |
BV 20100
Abstract: 2N2369AU 2N2907AUB
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LCC-28 SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 BV 20100 2N2369AU 2N2907AUB | |
DG506Contextual Info: DG406/407 16-Ch/Dual 8-Ch High-Performance CMOS Analog MUX Features • • • • • • Applications Benefits Low On-Resistance—rDS on : 50 Q Low Charge Injection—Q: 15 pC Fast Transition Time—tTRANS: 200 ns Low Power: 0.2 mW Single Supply Capability |
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DG406/407 16-Ch/Dual DG506/507A DG406 16-channel DG407 AN203 E-76983-- DG506 | |
1202z
Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
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5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3 | |
VB-24V
Abstract: MB4752A sc-015 ic 2w 4w hybrid ic fujitsu F50
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TS544-A874 MB4752A 200S2 440ii 440J2 200fi VB-24V sc-015 ic 2w 4w hybrid ic fujitsu F50 | |
uc3909 Battery 12V
Abstract: UC3909 keystone carbon L1005-5744-103-D1 uc3906 Battery 12v
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UC2909 UC3909 UC3909 UDG-95009 UDG-95010 uc3909 Battery 12V keystone carbon L1005-5744-103-D1 uc3906 Battery 12v | |
2n7615
Abstract: 2N761
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PD-97260A LCC-28) IRHLQ77214 IRHLQ73214 2N7615U6 LCC-28 MIL-STD-750, MlL-STD-750, 2n7615 2N761 | |
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
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30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 | |
ras 0610 relay
Abstract: relay sm1 SH7712 RBL 43 P 530 SE SH7710 S273S
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SH7710, SH7712, SH7713 32-Bit SH7700 SH7710 SH7712 HD6417710 HD6417712 ras 0610 relay relay sm1 RBL 43 P 530 SE S273S | |
DG406
Abstract: DG406DJ DG406DJ-E3 DG406DN DG406DW DG407 DG407DJ
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DG406, DG407 16-Ch/Dual DG406 11-Mar-11 DG406DJ DG406DJ-E3 DG406DN DG406DW DG407 DG407DJ | |
diode s453
Abstract: QFJ028-P-S453-2 LCC-28P-M03
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LCC-28P-M03 QFJ028-P-S453-2 50mil 453mil 28-pin LCC-28P-M03) diode s453 QFJ028-P-S453-2 LCC-28P-M03 | |
hamming encoder decoder
Abstract: foto transistor 8b/10b scrambler 8B10B 8B10B ansi encoder block diagram code hamming Matra Semiconductor counter code de hamming MAR 8TB
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TSS923 TSS933 8B10B 8B16B seria33 MQFPJ28 LCC28( PLCC28( SOIC28( hamming encoder decoder foto transistor 8b/10b scrambler 8B10B ansi encoder block diagram code hamming Matra Semiconductor counter code de hamming MAR 8TB | |
lm1083
Abstract: 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG
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IP117 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 B2009 lm1083 5962-8777601XX 7703407XA IP137MAHVSMD05 5962-8767502UA 5962-8855301ux 7703401ua IP140ME-15 FM362 IP7905AG | |
Contextual Info: FEB 16 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117100-60/-70/-80 „ CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8117100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of |
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MB8117100-60/-70/-80 MB8117100 096-bits | |
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Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high |
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TS270â MB82B75 384-words 300mil 24P-M03 C24062S-1C MB82B74-15 MB82B74-20 | |
Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage |
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16384-BIT MBM10484AAugust 16384-BIT 0484A 28-PAD LCC-28C-F02) 24PLCS) 02ITYP | |
Contextual Info: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is |
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MB82B88-15/-20 256K-BIT B82B88 MB82B88 | |
Contextual Info: JUl 8 7 June 1992 Edition 1.0A DATA SH E ET '• _ FUJITSU MB814800A-70/-80/-10 CMOS 512Kx 8 Bits Fast Page Mode Dynamic RAM The Fujitsu M B814800A is a fully decoded CMOS Dynam ic RAM DRAM that contains 4,194,304 m em ory cells accessible in 8-bit increments. The M B814800A features a fast |
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MB814800A-70/-80/-10 512Kx B814800A | |
Contextual Info: FÉB i 6 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 |
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MB8117400-60/-70/-80 MB8117400 196-bits MB81Fujitsu | |
Contextual Info: MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM MB81V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The MB81V17805A features a “hyper page” mode of operation whereby |
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MB81V17805A-60/60L/-70/70L MB81V17805A MB81V17805A C28058S-2C MB81V17805A-60/-60L/-70/-70L 28-LEAD FPT-28P-M14) F28040S-1C | |
PIR alarm system
Abstract: txal* 228 bs ADE-602-096B dp83848 application 264 bf BT 816 cd0a2 un 816 i 336 SH7700 DP83848
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REJ09B0288-0150 SH7713 32-Bit SH7700 HD6417713 PIR alarm system txal* 228 bs ADE-602-096B dp83848 application 264 bf BT 816 cd0a2 un 816 i 336 DP83848 | |
txal* 228 bs
Abstract: CD 5888 CB CD 5888 BU 808 DX 851 A24 h2a SH7712 cd0a2 DST 09 PFC1 Nippon capacitors bcd to seven segment circuit diagram
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REJ09B0269-0100 SH7712 32-Bit SH7700 HD6417712 txal* 228 bs CD 5888 CB CD 5888 BU 808 DX 851 A24 h2a SH7712 cd0a2 DST 09 PFC1 Nippon capacitors bcd to seven segment circuit diagram | |
Contextual Info: PRELIM INARY- - October 1995 Edition 2.1 = FUJITSU PRODUCT PROFILE SHEET MB8 117805A-60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CM O S 2,097,152x 8B IT Hyper Page Mode Dynam ic RAM The Fujitsu MB8117805A is a fully decoded CMOS Dynamic RAM DRAM that contains |
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17805A-60/-70 MB8117805A MB8117805A-60 MB8117805A-70 28-LEAD LCC-28P-M07) C28058S-2C | |
Contextual Info: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer |
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MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C |