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    TDK Corporation B82789C0104N002

    Common Mode Chokes / Filters 2X100UH -30%+50%.15A
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    TTI B82789C0104N002 Reel 67,500 2,500
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    B82789C0104N002 Reel 2,500 2,500
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    • 10000 $0.681
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    TDK Corporation B82789C0104H002

    Common Mode Chokes / Filters 100uH 150Ma 150Ohm CAN-BUS AEC-Q200 150degC
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    TTI B82789C0104H002 Reel 17,500 2,500
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    TDK Corporation B82789C113N2

    Common Mode Chokes / Filters 11uH 300mA 25Ohm Can-Bus AEC-Q200 150degC
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    TTI B82789C113N2 Reel 10,000 2,500
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    TDK Corporation B82789C 513N 2

    Common Mode Chokes / Filters 51 UH
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    TTI B82789C 513N 2 Reel 5,000 2,500
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    TDK Corporation B82789C0513H002

    Common Mode Chokes / Filters 51uH 250mA 55Ohm CAN-BUS AEC-Q200 150degC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI B82789C0513H002 Reel 2,500 2,500
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    Find more LCHOKE price and stock on Findchips.com

    LCHOKE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN037

    Abstract: simco touch sensitive saran ionizer HSMS-8101 HSMS-8202 simco electrostatic Desco Industries 3M Touch Systems
    Text: DESIGN APPLICATION NOTE - AN037 An ESD Overview, and Suggested Handling Precautions What is static electricity, and why are we concerned about it? Static electricity is the charge that builds up on dissimilar materials when they are brought together then separated. We’ve all experienced static electricity


    Original     		PDF AN037 EAN-102030 AN037 simco touch sensitive saran ionizer HSMS-8101 HSMS-8202 simco electrostatic Desco Industries 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance


    Original     		PDF AN727 Si4012

    marking 34 sot-363 rf

    Abstract: SGA-5263 34 sot-363 rf power amplifier
    Text: SGA-5263 Product Description The SGA-5263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


    Original     		PDF SGA-5263 SGA-5263 EDS-101540 OT-363 marking 34 sot-363 rf 34 sot-363 rf power amplifier

    maxim CODE TOP MARKING

    Abstract: 47 SOT143 maxim TOP MARKING MAX2611 MAX2611EUS EIA481-1 MAX2611EUS-T
    Text: 19-1094; Rev 2; 4/05 KIT ATION EVALU E L B A IL AVA DC-to-Microwave, Low-Noise Amplifier _Features The MAX2611 is a low-voltage, low-noise amplifier for use from DC to microwave frequencies. Operating from a single +5V supply, it has a 3dB bandwidth of


    Original     		PDF MAX2611 1100MHz. OT143 OT-143 MAX2611 OT-143, maxim CODE TOP MARKING 47 SOT143 maxim TOP MARKING MAX2611EUS EIA481-1 MAX2611EUS-T

    LT5554

    Abstract: LT5557
    Text: LTC6412 800MHz, 31dB Range Analog-Controlled VGA FEATURES n n n n n n n n n n n n DESCRIPTION 800MHz –3dB Small-Signal Bandwidth Continuously-Adjustable Gain Control –14dB to +17dB Linear-in-dB Gain Range 35dBm OIP3 at 240MHz Across All Gain Settings 10dB Noise Figure at Maximum Gain


    Original     		PDF LTC6412 800MHz, 800MHz 35dBm 240MHz 110mA 24-Pin LTC2630-10 10-Bit LT5554 LT5557

    JAPANESE TRANSISTOR DATA BOOK 2010

    Abstract: Si443x Tanking Group AN427 AN436 SC-10 Si4431 Class-E Power Amplifiers class-e power amplify
    Text: AN436 Si4030/4031/4430/4431 PA M A TC H ING 1. Introduction This application note provides a description of the matching of the power amplifier PA on the Si4030/4031/4430/4431 family of RFICs. (As these chips do not differ in the design and functionality of the PA, the


    Original     		PDF AN436 Si4030/4031/4430/4431 Si4431 Si4032/4432 JAPANESE TRANSISTOR DATA BOOK 2010 Si443x Tanking Group AN427 AN436 SC-10 Class-E Power Amplifiers class-e power amplify

    si4432

    Abstract: AN457 Si4432B tx 2b Si4432-DKDB2 AN435 Si443x 4432-T-B1-C-xxx crga
    Text: AN457 T RANSITIONING S i 4432 F R O M R EV V2 TO R EV B 1. Purpose and Overview The purpose of this document is to describe the changes between Revisions V2 and B to assist in the transition to the new revision. Pinout, TX/RX matching, register modifications, and overall performance improvements are


    Original     		PDF AN457 Si4432 AN457 Si4432B tx 2b Si4432-DKDB2 AN435 Si443x 4432-T-B1-C-xxx crga

    SNA-586

    Abstract: ECB-100330 Sirenza Microdevices sna586 DC-5GHZ SOT-86 NGA-586 Sirenza Microdevices, Inc
    Text: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage


    Original     		PDF SNA-586 SNA-586 NGA-586 ECB-100330 OT-86 EDS-101397 Sirenza Microdevices sna586 DC-5GHZ SOT-86 Sirenza Microdevices, Inc

    SGA-5263Z

    Abstract: a52z
    Text: SGA5263Z SGA5263ZDC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		PDF SGA5263Z SGA5263ZDC 4500MHz, OT-363 SGA5263Z 4500MHz DS100915 SGA-5263Z a52z

    ESG89001

    Abstract: philips choke ferrite
    Text: Philips Semiconductors Application note Electro magnetic compatibility and printed circuit board PCB constraints 1. INTRODUCTION The routing of the traces on a Printed Circuit Board (PCB) largely effect the ElectroMagnetic Compatibility (EMC) performance of the PCB with respect to both


    Original     		PDF

    CD laser pickup assembly

    Abstract: DVD laser pickup assembly CD Laser pickup HFM EL6201 EL6201CW-T7 EL6201CW-T7A EL6201CWZ-T7 EL6201CY MDP0038
    Text: EL6201 Data Sheet Low Power 430MHz HFM Oscillator w/Disable The EL6201 is a solid state high performance laser modulation oscillator with external resistor adjustable frequency and amplitude. The EL6201 is available in both the 8-pin MSOP and the 5-pin SOT-23, to


    Original     		PDF EL6201 430MHz EL6201 OT-23, CD laser pickup assembly DVD laser pickup assembly CD Laser pickup HFM EL6201CW-T7 EL6201CW-T7A EL6201CWZ-T7 EL6201CY MDP0038

    15w cfl

    Abstract: resonant half bridge schematic philips 11w cfl Three phase inverter mosfet Diagram cfl schematic 27W resonant half bridge ballast schematic Sylvania 15W 11w cfl circuit
    Text: AN1234 APPLICATION NOTE L6567: DESIGN HINTS An integrated ballast design has been made with L6567 IC. The chosen topology is an half bridge inverter. L6567 provides all the necessary functions for driving the external power mosfets and for preheat, ignition and steady state operations control of the lamp. The minimum part count required makes


    Original     		PDF AN1234 L6567: L6567 D00IN1101 15w cfl resonant half bridge schematic philips 11w cfl Three phase inverter mosfet Diagram cfl schematic 27W resonant half bridge ballast schematic Sylvania 15W 11w cfl circuit

    germanium transistor ac 129

    Abstract: SGA-3563
    Text: Preliminary Preliminary Product Description SGA-3563 Stanford Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-3563 SGA-3563 50-ohm DC-5000 EDS-101496 germanium transistor ac 129

    marking A45

    Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
    Text: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-4563 SGA-4563 50-ohm DC-2500 EDS-101803 marking A45 germanium transistor ac 128 marking A45 RF TRANSISTOR 726

    marking g45

    Abstract: germanium transistor ac 128 SGA-0163
    Text: Preliminary Preliminary Product Description SGA-0163 Stanford Microdevices’ SGA-0163 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.1V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		PDF SGA-0163 SGA-0163 50-ohm DC-4500 EDS-101494 marking g45 germanium transistor ac 128

    15w cfl

    Abstract: 6V 11w cfl DF06N philips 11w cfl 6v inverter 11W cfl CFL 3 x 15w inverter circuit schematic diagram cfl lamp 15w STP2NB50 CFL inverter circuit schematic diagram working principle of an inverter
    Text: AN1234 APPLICATION NOTE L6567: DESIGN HINTS An integrated ballast design has been made with L6567 IC. The chosen topology is an half bridge inverter. L6567 provides all the necessary functions for driving the external power mosfets and for preheat, ignition and steady state operations control of the lamp. The minimum part count required makes


    Original     		PDF AN1234 L6567: L6567 D00IN1101 15w cfl 6V 11w cfl DF06N philips 11w cfl 6v inverter 11W cfl CFL 3 x 15w inverter circuit schematic diagram cfl lamp 15w STP2NB50 CFL inverter circuit schematic diagram working principle of an inverter

    HMMC-5220

    Abstract: applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC
    Text: Agilent HMMC-5220 DC-15 GHz HBT Series-Shunt Amplifier Data Sheet Features • High Bandwidth, F-1dB: 16 GHz Typical • Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


    Original     		PDF HMMC-5220 DC-15 HMMC-5220 HMMC-5220/rev applications OF IC 7905 ic um 3481 276-137 544 mmic DC-10 GaAs MMIC ESD, Die Attach and Bonding Guidelines 7905 circuit diagram agilent HMMC

    SGA-5263

    Abstract: SGA5263Z 46A52
    Text: SGA-5263 Z SGA-5263(Z) DC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-5263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		PDF SGA-5263 4500MHz, OT-363 4500MHz SGA-5263 SGA-5263Z EDS-101540 SGA5263Z 46A52

    CD laser pickup assembly

    Abstract: fn7216 CD Laser pickup HFM EL6201 EL6201CW-T7 EL6201CW-T7A EL6201CY EL6201CY-T13 EL6201CY-T7 EL6201CYZ
    Text: EL6201 Data Sheet August 2, 2007 Low Power 430MHz HFM Oscillator with Disable The EL6201 is a solid state high performance laser modulation oscillator with external resistor adjustable frequency and amplitude. The EL6201 is available in both the 8 Ld MSOP and the 5 Ld SOT-23, to enable device


    Original     		PDF EL6201 430MHz EL6201 OT-23, FN7216 CD laser pickup assembly CD Laser pickup HFM EL6201CW-T7 EL6201CW-T7A EL6201CY EL6201CY-T13 EL6201CY-T7 EL6201CYZ

    Untitled

    Abstract: No abstract text available
    Text: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since


    Original     		PDF AN648 Si4063/Si4463/64 Si4060/Si4460/61 AN627:

    Untitled

    Abstract: No abstract text available
    Text: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance


    Original     		PDF AN727 Si4012

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
    Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096

    Untitled

    Abstract: No abstract text available
    Text: SAMP7717Z SAMP7717Z DC to 4500MHz, Silicon Germanium Cascadable Gain Block DC to 4500MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features The SAMP7717Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and


    Original     		PDF SAMP7717Z 4500MHz, OT-363 SAMP7717Z 4500MHzF DS090529

    Untitled

    Abstract: No abstract text available
    Text: What H EW LETT 1 W M P ACK A RD DC - 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5200 Features • High Bandwidth, F_ldB: 21 GHz Typical ' GND 1 Vcc 1 1 ' GND 1 • M oderate Gain: S>@ 9.5 dB ±1 dB @ 1.5 GHz • P id B ' 1 @ 1-5 GHz: 12 dBm Typical


    OCR Scan     		PDF HMMC-5200